IXFH12N80P Equivalent & Substitute Parts

Part Overview

The IXFH12N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 12A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining the same package form factor and thermal characteristics. Alternative devices may be required due to inventory availability, lead time considerations, or application-specific thermal management needs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	12	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	850	mOhm
Gate Threshold Voltage Vgs(th) (Max)	5.5	V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	51	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2800	pF @ 25V
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Gate Voltage (Max)	±30	V

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH12N80P is determined by the following critical electrical and mechanical parameters:

Voltage Rating Requirement: Drain-to-source voltage must equal or exceed 800V to maintain system voltage margin and reliability.

Current Rating Consideration: Continuous drain current at 25°C establishes thermal and power handling capability. Substitute devices with lower current ratings require thermal derating analysis for equivalent power dissipation applications.

On-State Resistance (Rds On): Maximum on-state resistance at specified gate voltage and current determines conduction losses. Devices with higher Rds On values increase power dissipation and heat generation.

Gate Charge (Qg): Total gate charge affects switching speed and driver circuit requirements. Higher gate charge increases switching losses and driver power consumption.

Package Compatibility: TO-247-3 through-hole mounting is required for mechanical and thermal interface compatibility with existing PCB designs and heatsink assemblies.

Thermal Rating: Maximum power dissipation and operating temperature range must support the intended application thermal environment.

The STW10NK80Z from STMicroelectronics meets the voltage rating and package requirements but operates at reduced continuous current (9A versus 12A) and power dissipation (160W versus 360W).

Parameter Comparison

Parameter	IXFH12N80P (Main)	STW10NK80Z (Substitute)	Unit
Manufacturer	IXYS	STMicroelectronics	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	800	800	V
Continuous Drain Current (Id) @ 25°C	12	9	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	850 @ 500mA	900 @ 4.5A	mOhm
Gate Threshold Voltage Vgs(th) (Max)	5.5 @ 2.5mA	4.5 @ 100µA	V
Gate Charge (Qg) (Max) @ Vgs	51 @ 10V	72 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	2800 @ 25V	2180 @ 25V	pF
Power Dissipation (Max)	360	160	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-247-3	TO-247-3	Through Hole
Gate Voltage (Max)	±30	±30	V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXFH12N80P Selection Criteria:

The IXFH12N80P is the primary choice for applications requiring the full 12A continuous drain current rating and 360W maximum power dissipation. This device is Active in product status with established supply chain availability (1148 pcs in stock). Full RoHS3 compliance and REACH unaffected status confirm regulatory alignment for industrial and commercial applications.

STW10NK80Z Selection Criteria:

The STW10NK80Z serves as an alternative for applications where continuous drain current requirements do not exceed 9A and power dissipation remains below 160W. This device is also Active in product status with higher inventory availability (10091 pcs in stock). Both devices share identical voltage ratings, operating temperature range, gate voltage limits, and regulatory compliance status (RoHS3, REACH unaffected, MSL 1).

Substitution Limitations:

The STW10NK80Z exhibits higher gate charge (72 nC versus 51 nC), which increases switching losses and driver circuit power consumption. The on-state resistance specification is measured at different current levels (4.5A versus 500mA), reflecting different device design characteristics. Lower input capacitance in the STW10NK80Z (2180 pF versus 2800 pF) may reduce switching losses in high-frequency applications.

Applications designed for the full 12A rating and 360W dissipation cannot use the STW10NK80Z without thermal derating analysis and potential circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can the STW10NK80Z directly replace the IXFH12N80P in all applications?

A: No. The STW10NK80Z is rated for 9A continuous drain current and 160W maximum power dissipation, compared to 12A and 360W for the IXFH12N80P. Direct substitution is limited to applications operating below these reduced ratings. Applications requiring the full 12A current or 360W dissipation require the IXFH12N80P.

Q: Are the package dimensions identical between these devices?

A: Both devices use the TO-247-3 through-hole package, which provides mechanical and thermal interface compatibility. PCB footprints and heatsink mounting interfaces are equivalent.

Q: What is the impact of higher gate charge in the STW10NK80Z?

A: The STW10NK80Z gate charge is 72 nC at 10V, compared to 51 nC for the IXFH12N80P. Higher gate charge increases the time and energy required to switch the device, resulting in higher switching losses and increased driver circuit power consumption. Driver circuits must be evaluated for compatibility with the increased charge requirement.

Q: Do both devices meet the same regulatory requirements?

A: Yes. Both the IXFH12N80P and STW10NK80Z are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited moisture sensitivity). Both devices are suitable for applications with identical regulatory compliance requirements.

Q: What is the significance of the different Rds On measurement conditions?

A: The IXFH12N80P specifies Rds On at 500mA and 10V gate voltage, while the STW10NK80Z specifies it at 4.5A and 10V gate voltage. These different measurement conditions reflect device design differences and cannot be directly compared. On-state resistance varies with current and temperature; application-specific analysis is required to determine conduction losses at actual operating conditions.

Q: Can the STW10NK80Z be used in a circuit designed for 12A operation with thermal derating?

A: Thermal derating analysis is required. The STW10NK80Z maximum power dissipation of 160W limits continuous operation at full current. Applications must operate at reduced current levels or with intermittent duty cycles to remain within the device thermal limits. Circuit redesign may be necessary to accommodate the lower power rating.

Q: Are there differences in switching characteristics between these devices?

A: Yes. The STW10NK80Z exhibits lower input capacitance (2180 pF versus 2800 pF) and higher gate charge (72 nC versus 51 nC). These differences affect switching speed and switching losses. High-frequency applications must evaluate the impact of these parameter differences on overall circuit performance and efficiency.

Q: What inventory considerations apply to these devices?

A: The IXFH12N80P has 1148 pcs in stock, while the STW10NK80Z has 10091 pcs in stock. Higher availability of the STW10NK80Z may provide lead time advantages for applications within its current and power rating specifications.

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