IXFH12N50F N-Channel 500V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH12N50F is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 12A continuous drain current at 25°C. This device is housed in a TO-247 through-hole package and is part of the HiPerRF™ series. The part is currently classified as obsolete, making identification of functionally equivalent substitutes necessary for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	12	A (Tc)
Rds On (Max) @ Id, Vgs	400	mOhm @ 6A, 10V
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IXFH12N50F is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Family: TO-247 variants

Performance Compatibility Criteria:

Continuous Drain Current (Id) at 25°C: Equal to or greater than 12A
Rds On (Max): Equal to or less than 400 mOhm (at specified gate voltage)
Power Dissipation (Max): Equal to or greater than 180W
Operating Temperature Range: Must encompass -55°C to 150°C

Substitute parts are grouped into two categories: direct replacements with equivalent or superior current ratings, and alternative manufacturers offering compatible devices within the same voltage and package class.

Parameter Comparison

Parameter	IXFH12N50F	IXFH26N50P	IRFP17N50LPBF	IRFP450LCPBF	STW15NK50Z
Manufacturer	IXYS	IXYS	Vishay Siliconix	Vishay Siliconix	STMicroelectronics
Product Status	Obsolete	Active	Active	Active	Not For New Designs
Drain to Source Voltage (Vdss)	500V	500V	500V	500V	500V
Current - Continuous Drain (Id) @ 25°C	12A	26A	16A	14A	14A
Rds On (Max) @ Id, Vgs	400 mOhm @ 6A, 10V	230 mOhm @ 13A, 10V	320 mOhm @ 9.9A, 10V	400 mOhm @ 8.4A, 10V	340 mOhm @ 7A, 10V
Power Dissipation (Max)	180W	400W	220W	190W	160W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-50 to 150°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10V	60 nC @ 10V	130 nC @ 10V	74 nC @ 10V	106 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1870 pF @ 25V	3600 pF @ 25V	2760 pF @ 25V	2200 pF @ 25V	2260 pF @ 25V
Vgs (Max)	±20V	±30V	±30V	±30V	±30V
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH26N50P (IXYS)

This part is the primary substitute from the same manufacturer. It maintains the same voltage rating (500V) and package type (TO-247-3) while offering superior performance specifications. The IXFH26N50P provides 26A continuous drain current versus 12A in the original part, with lower on-resistance (230 mOhm versus 400 mOhm) and higher power dissipation capability (400W versus 180W). The device is currently in active production status with ROHS3 compliance. This part is suitable for direct replacement in applications where the increased current capacity and improved thermal performance do not create design conflicts.

IRFP17N50LPBF (Vishay Siliconix)

This Vishay device offers active production status with ROHS3 compliance. It provides 16A continuous drain current, exceeding the original 12A specification, with 220W power dissipation capability. The on-resistance of 320 mOhm is lower than the original 400 mOhm specification. The operating temperature range matches the original part (-55°C to 150°C). This part is suitable for applications requiring a direct current-class replacement with improved thermal performance.

IRFP450LCPBF (Vishay Siliconix)

This part provides 14A continuous drain current with 190W power dissipation, closely matching the original specifications. On-resistance is 400 mOhm, identical to the IXFH12N50F. The device maintains active production status with ROHS3 compliance and full operating temperature range compatibility. This part is suitable for applications where specifications must remain within the original design envelope.

STW15NK50Z (STMicroelectronics)

This device is classified as "Not For New Designs" and should be used only for legacy system support or maintenance applications. It provides 14A continuous drain current with 160W power dissipation. The operating temperature range is -50°C to 150°C, which does not extend to the original -55°C minimum. Use of this part is restricted to situations where existing inventory must be maintained or legacy designs require component continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXFH26N50P be used as a direct replacement for the IXFH12N50F?

A: Yes. Both devices share identical voltage ratings (500V), package type (TO-247-3), and operating temperature range (-55°C to 150°C). The IXFH26N50P exceeds the original specifications in current capacity (26A versus 12A), on-resistance (230 mOhm versus 400 mOhm), and power dissipation (400W versus 180W). Verification that the circuit design accommodates these enhanced specifications is required.

Q: What is the difference between TO-247-3 and TO-247AD packages?

A: Both are TO-247 family through-hole packages with three leads. The TO-247AD variant used in the IXFH26N50P is a manufacturer-specific designation. All substitute parts listed use compatible TO-247 package variants suitable for the same PCB footprint and mounting hardware.

Q: Why is the STW15NK50Z marked "Not For New Designs"?

A: This designation indicates the manufacturer has discontinued active development and recommends against use in new circuit designs. The part remains available for legacy system support and maintenance. For new designs, the IRFP17N50LPBF, IRFP450LCPBF, or IXFH26N50P are preferred alternatives.

Q: Are all substitute parts RoHS3 compliant?

A: The IXFH26N50P, IRFP17N50LPBF, IRFP450LCPBF, and STW15NK50Z are all ROHS3 compliant. The original IXFH12N50F does not specify RoHS status in the provided data.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects the switching speed and driver circuit requirements. The IXFH12N50F has 54 nC gate charge, while substitute parts range from 60 nC to 130 nC. Higher gate charge requires more driver current and may increase switching losses. Circuit driver capability must be verified for parts with significantly higher gate charge values.

Q: Can these parts be used interchangeably in existing PCB designs?

A: All substitute parts use TO-247-3 through-hole packages with identical pin configurations and mounting footprints. Physical installation is interchangeable. Electrical performance differences, particularly in on-resistance and current capacity, must be evaluated against circuit design requirements and thermal management provisions.

Q: What is the minimum operating temperature difference between the original part and STW15NK50Z?

A: The IXFH12N50F operates from -55°C, while the STW15NK50Z operates from -50°C. This 5°C difference may be significant in applications requiring full temperature range coverage. The IXFH26N50P, IRFP17N50LPBF, and IRFP450LCPBF all maintain the -55°C minimum specification.

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