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IXFH12N100Q N-Channel 1000V 12A MOSFET Equivalent & Substitute Parts
Part Overview
The IXFH12N100Q is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 12A continuous drain current at 25°C. This device belongs to the HiPerFET™ Q Class series and is housed in a TO-247AD through-hole package. The part is Active in product status and fully RoHS3 compliant.
Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter ranges for high-voltage N-Channel MOSFET applications. Substitution becomes necessary due to inventory availability, lead time constraints, or design flexibility requirements across manufacturing partners.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 1000 | V |
| Current - Continuous Drain (Id) @ 25°C | 12 | A |
| Rds On (Max) @ Id, Vgs | 1.05 | Ohm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90 | nC @ 10V |
| Power Dissipation (Max) | 300 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-247-3 | Through Hole |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) |
Substitute Part Grouping Explanation
Substitution of the IXFH12N100Q is determined by the following critical parameters:
Primary Substitution Criteria:
- FET Type: N-Channel (required match)
- Technology: MOSFET Metal Oxide (required match)
- Mounting Type: Through Hole (required match)
- Package Case: TO-247-3 (required match)
- Drain to Source Voltage (Vdss): Minimum 950V (allows operation within the 1000V design envelope)
- Continuous Drain Current (Id): Minimum 9A (maintains adequate current handling for most applications)
- Operating Temperature Range: -55°C to 150°C (required match)
- RoHS3 Compliance: Required
- Moisture Sensitivity Level: MSL 1 (Unlimited)
Identified Substitutes:
The STW11NK90Z and STW6N95K5 from STMicroelectronics meet the core substitution criteria. Both devices are N-Channel MOSFETs in TO-247-3 through-hole packages with operating temperature ranges of -55°C to 150°C and RoHS3 compliance. Both maintain Vdss ratings within acceptable limits (900V and 950V respectively) and provide continuous drain currents of 9.2A and 9A, which satisfy minimum current requirements for high-voltage switching applications.
Parameter Comparison
| Parameter | IXFH12N100Q | STW11NK90Z | STW6N95K5 | Unit |
|---|---|---|---|---|
| Manufacturer | IXYS | STMicroelectronics | STMicroelectronics | |
| FET Type | N-Channel | N-Channel | N-Channel | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000 | 900 | 950 | V |
| Current - Continuous Drain (Id) @ 25°C | 12 | 9.2 | 9 | A |
| Drive Voltage (Max Rds On) | 10 | 10 | 10 | V |
| Rds On (Max) @ Id, Vgs | 1.05 @ 6A, 10V | 0.98 @ 4.6A, 10V | 1.25 @ 3A, 10V | Ohm |
| Vgs(th) (Max) @ Id | 5.5 @ 4mA | 4.5 @ 100µA | 5 @ 100µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 90 @ 10V | 115 @ 10V | 13 @ 10V | nC |
| Vgs (Max) | ±20 | ±30 | ±30 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 @ 25V | 3000 @ 25V | 450 @ 100V | pF |
| Power Dissipation (Max) | 300 | 200 | 90 | W |
| Operating Temperature Range | -55 to 150 | -55 to 150 | -55 to 150 | °C |
| Mounting Type | Through Hole | Through Hole | Through Hole | |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
IXFH12N100Q (Primary Part)
The IXFH12N100Q remains the primary selection for applications requiring the full 1000V voltage rating and 12A continuous current capacity. This device is Active in product status with 4195 units in stock. It provides the highest power dissipation rating (300W) and is suitable for demanding high-voltage switching applications. The part is fully RoHS3 compliant and REACH unaffected.
STW11NK90Z (Substitute Option)
The STW11NK90Z is suitable for applications where the 900V Vdss rating is acceptable and continuous drain current requirements do not exceed 9.2A. This STMicroelectronics device operates within the same temperature range and maintains RoHS3 compliance. The 200W power dissipation rating is lower than the primary part, requiring thermal design consideration. Gate charge is slightly elevated at 115 nC. Inventory availability is 1771 units.
STW6N95K5 (Substitute Option)
The STW6N95K5 is applicable for applications where the 950V Vdss rating meets design requirements and continuous drain current does not exceed 9A. This device features significantly lower gate charge (13 nC) compared to the primary part, resulting in faster switching characteristics. However, the 90W power dissipation rating is substantially lower, limiting use to lower-power applications. Input capacitance is reduced to 450 pF at 100V. Inventory availability is 65200 units. RoHS3 compliance and REACH unaffected status are maintained.
All three devices are Active in product status and suitable for through-hole PCB assembly in TO-247-3 packages.
Frequently Asked Questions (FAQ)
Q: Can the STW11NK90Z replace the IXFH12N100Q in all applications?
A: The STW11NK90Z is a substitute only for applications where the 900V Vdss rating is sufficient. If your design requires the full 1000V voltage margin, this substitute is not appropriate. Additionally, the 200W power dissipation limit must be verified against your thermal requirements, as it is lower than the primary part's 300W rating.
Q: What is the primary difference between the STW11NK90Z and STW6N95K5?
A: The STW11NK90Z provides higher continuous drain current (9.2A versus 9A) and higher power dissipation capability (200W versus 90W). The STW6N95K5 offers significantly lower gate charge (13 nC versus 115 nC), enabling faster switching speeds. The STW6N95K5 also features lower input capacitance at 450 pF. Selection depends on whether your application prioritizes current handling and thermal performance or switching speed.
Q: Are all three devices pin-compatible?
A: Yes. All three devices use the TO-247-3 through-hole package with identical pin configuration. Direct PCB substitution is possible without layout modifications.
Q: What compliance certifications apply to the substitute parts?
A: Both STMicroelectronics substitutes (STW11NK90Z and STW6N95K5) are RoHS3 compliant and REACH unaffected, matching the compliance status of the IXFH12N100Q. Both maintain Moisture Sensitivity Level 1 (Unlimited).
Q: Can I use the STW6N95K5 in a high-power application?
A: The STW6N95K5 is limited to 90W maximum power dissipation, which is significantly lower than the IXFH12N100Q (300W) and STW11NK90Z (200W). This device is suitable only for low-power switching applications. Verify your thermal budget before selection.
Q: What is the operating temperature range for all three devices?
A: All three devices operate across the identical temperature range of -55°C to 150°C (TJ), ensuring thermal compatibility across the full product line.
Q: Are there inventory considerations for substitution?
A: The STW6N95K5 has the highest inventory availability at 65200 units. The IXFH12N100Q has 4195 units in stock, and the STW11NK90Z has 1771 units available. Inventory levels may influence substitution decisions based on lead time requirements.
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