IXFH12N100P N-Channel 1000V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH12N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 12A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-247AD through-hole package. The component is actively produced and ROHS3 compliant, with unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including drain-to-source voltage rating, continuous drain current capacity, on-state resistance characteristics, gate charge, and through-hole packaging format.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	12	A (Tc)
Rds On (Max) @ Id, Vgs	1.05	Ohm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs	80	nC @ 10V
Vgs(th) (Max) @ Id	5	V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4080	pF @ 25V
Power Dissipation (Max)	463	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-247-3
FET Type	N-Channel	MOSFET
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH12N100P is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a drain-to-source voltage (Vdss) rating of 1000V or higher to ensure safe operation in the original application circuit.

Current Capacity: Substitute parts must support continuous drain current (Id) at 25°C equal to or greater than 12A to handle the same load conditions.

On-State Resistance (Rds On): The maximum on-state resistance must not significantly exceed the original specification to maintain thermal performance and power dissipation characteristics within acceptable limits.

Gate Charge (Qg): Gate charge values determine switching speed and driver circuit compatibility. Substitute parts with substantially different gate charge may require circuit re-evaluation.

Package Compatibility: All substitute parts must use through-hole TO-247 series packaging to ensure mechanical and electrical compatibility with existing PCB layouts.

Regulatory Compliance: All substitute parts must maintain ROHS3 compliance and active product status to ensure supply chain continuity and regulatory adherence.

Parameter Comparison

Parameter	IXFH12N100P (Main)	APT14F100B	STW11NK90Z	STW6N95K5
Manufacturer	IXYS	Microchip Technology	STMicroelectronics	STMicroelectronics
Drain to Source Voltage (Vdss)	1000V	1000V	900V	950V
Current - Continuous Drain (Id) @ 25°C	12A	14A	9.2A	9A
Rds On (Max) @ Id, Vgs	1.05Ω @ 6A, 10V	980mΩ @ 7A, 10V	980mΩ @ 4.6A, 10V	1.25Ω @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V	120nC @ 10V	115nC @ 10V	13nC @ 10V
Vgs(th) (Max) @ Id	5V @ 1mA	5V @ 1mA	4.5V @ 100µA	5V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds	4080pF @ 25V	3965pF @ 25V	3000pF @ 25V	450pF @ 100V
Power Dissipation (Max)	463W	500W	200W	90W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

APT14F100B (Microchip Technology): This substitute maintains full 1000V voltage rating with increased continuous drain current of 14A, exceeding the original 12A specification. The on-state resistance of 980mΩ is lower than the IXFH12N100P at 1.05Ω, providing improved thermal efficiency. Power dissipation capability is 500W compared to 463W in the original part. Gate charge is elevated at 120nC, which may require driver circuit evaluation. All regulatory certifications and operating temperature range align with the original specification. This part is suitable for applications requiring higher current capacity within the same voltage class.

STW11NK90Z (STMicroelectronics): This substitute operates at a reduced voltage rating of 900V, which is 100V below the original specification. Continuous drain current is 9.2A, below the original 12A rating. On-state resistance is 980mΩ, and power dissipation is limited to 200W. This part is suitable only for applications where the 900V voltage rating is acceptable and current requirements do not exceed 9.2A. Gate charge of 115nC is comparable to the original specification.

STW6N95K5 (STMicroelectronics): This substitute operates at 950V, which is 50V below the original 1000V specification. Continuous drain current is 9A, below the original 12A rating. Power dissipation is significantly reduced to 90W. Gate charge is substantially lower at 13nC, indicating faster switching characteristics. This part is suitable only for lower-power applications where the reduced voltage and current ratings are acceptable.

All substitute parts maintain ROHS3 compliance, active product status, and through-hole TO-247-3 packaging compatibility with the original IXFH12N100P.

Frequently Asked Questions (FAQ)

Q: Can the APT14F100B directly replace the IXFH12N100P in all applications?

A: The APT14F100B maintains the same 1000V voltage rating and exceeds the current specification at 14A versus 12A. Both parts use TO-247-3 through-hole packaging and are ROHS3 compliant. The primary difference is elevated gate charge at 120nC compared to 80nC in the original part. Applications with tight gate driver timing requirements should evaluate the impact of increased gate charge on switching performance.

Q: Why do STW11NK90Z and STW6N95K5 have lower voltage ratings than the IXFH12N100P?

A: STW11NK90Z is rated for 900V and STW6N95K5 for 950V, both below the original 1000V specification. These parts are from different product series (SuperMESH™ and SuperMESH5™) optimized for different voltage classes. Substitution with these parts is limited to applications where the reduced voltage rating is acceptable.

Q: What is the significance of gate charge differences among these parts?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. The IXFH12N100P requires 80nC, while APT14F100B requires 120nC and STW11NK90Z requires 115nC. Higher gate charge increases switching time and driver circuit power consumption. STW6N95K5 has significantly lower gate charge at 13nC, enabling faster switching but requiring different driver circuit design.

Q: Are all substitute parts available in the same through-hole package?

A: Yes. The IXFH12N100P uses TO-247AD packaging, while all substitute parts use TO-247-3 packaging. Both are through-hole TO-247 series packages with identical pin configurations and PCB footprints, ensuring mechanical compatibility.

Q: What inventory levels are available for each part?

A: IXFH12N100P has 5525 pieces in stock. APT14F100B has 700 pieces. STW11NK90Z has 1771 pieces. STW6N95K5 has 65200 pieces in stock.

Q: Do all parts meet the same regulatory requirements?

A: Yes. All parts are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with HTSUS code 8541.29.0095. All parts have MSL 1 (unlimited moisture sensitivity) rating.

Q: Which substitute part is most suitable for a direct replacement in high-current applications?

A: APT14F100B is the most suitable for high-current applications, as it maintains the 1000V voltage rating and provides 14A continuous drain current, exceeding the original 12A specification. However, the increased gate charge of 120nC requires driver circuit evaluation.

Q: Can STW6N95K5 be used in applications requiring 12A continuous current?

A: No. STW6N95K5 is rated for only 9A continuous drain current, which is below the 12A requirement of the original IXFH12N100P. This part is suitable only for applications with lower current demands.

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