IXFH12N100F N-Channel 1000V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH12N100F is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 12A continuous drain current at 25°C. This device belongs to the HiPerFET™ F Class series and is housed in a TO-247AD through-hole package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter ranges for high-voltage N-Channel MOSFET applications, maintaining compatibility with TO-247 package family mounting requirements and operating temperature specifications.

Substiute Parts

IXFH12N100F

IXYSIn Stock: 1500IXFH12N100F Datasheet

Current PartRFQ

STW11NK90Z

STMicroelectronicsIn Stock: 1848STW11NK90Z Datasheet

MFR RecommendedRFQ

STW6N95K5

STMicroelectronicsIn Stock: 65303STW6N95K5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFH12N100F are qualified based on the following criteria:

Electrical Compatibility Parameters:

• Drain-to-Source Voltage (Vdss) must be equal to or greater than 1000V to maintain voltage rating equivalence
• Continuous Drain Current (Id) must support the application's current requirements
• On-State Resistance (Rds On) must be within acceptable limits for thermal and efficiency performance
• Gate Threshold Voltage (Vgs(th)) must fall within standard gate drive voltage ranges
• Operating temperature range must span -55°C to 150°C minimum

Mechanical Compatibility Parameters:

• Package type must be TO-247 family (TO-247-3 or TO-247AD) to ensure pin compatibility and thermal performance
• Mounting type must be Through Hole

Regulatory Compliance:

• RoHS3 compliance required
• MSL rating of 1 (Unlimited) required
• REACH Unaffected status required

The identified substitute parts meet these criteria with trade-offs in current rating, power dissipation, or gate charge characteristics that remain within acceptable operating margins for equivalent circuit applications.

Parameter Comparison

Engineering Selection Recommendations

IXFH12N100F (Primary Part): Active product status with full inventory availability (1397 pcs). Highest voltage rating (1000V) and current capacity (12A) with maximum power dissipation of 300W. Suitable for applications requiring maximum voltage headroom and thermal performance. All regulatory certifications current.

STW11NK90Z (Substitute - Moderate Voltage Reduction): Active product status with strong inventory (1771 pcs). Voltage rating reduced to 900V with current capacity of 9.2A and 200W power dissipation. Lower gate charge (115 nC) compared to IXFH12N100F (77 nC) indicates faster switching characteristics. Acceptable for applications where 900V voltage rating is sufficient and switching speed is beneficial. All regulatory certifications current.

STW6N95K5 (Substitute - Optimized for Low Gate Charge): Active product status with highest inventory availability (65200 pcs). Voltage rating of 950V with 9A current capacity and 90W power dissipation. Significantly lower gate charge (13 nC) enables faster switching and reduced gate drive power requirements. Suitable for applications prioritizing switching efficiency over maximum power dissipation. All regulatory certifications current.

All three parts maintain identical operating temperature range (-55°C to 150°C), RoHS3 compliance, MSL 1 rating, and REACH Unaffected status, ensuring regulatory equivalence across substitution options.

Frequently Asked Questions (FAQ)

Q: Can STW11NK90Z replace IXFH12N100F in all applications?

A: STW11NK90Z operates at 900V maximum drain-to-source voltage compared to IXFH12N100F at 1000V. Substitution is valid only when the application's maximum operating voltage does not exceed 900V. Current capacity (9.2A vs 12A) and power dissipation (200W vs 300W) are also reduced. Verify circuit voltage stress and thermal requirements before substitution.

Q: What is the primary difference between STW11NK90Z and STW6N95K5?

A: STW11NK90Z provides higher current capacity (9.2A vs 9A) and power dissipation (200W vs 90W) with moderate gate charge (115 nC). STW6N95K5 prioritizes switching performance with significantly lower gate charge (13 nC), reducing gate drive losses and enabling faster switching transitions. Select based on whether the application requires higher current handling or optimized switching efficiency.

Q: Are all three parts pin-compatible?

A: All three parts use TO-247-3 package with identical pin configuration and through-hole mounting. Physical and electrical pin compatibility is confirmed. Thermal performance may vary due to different power dissipation ratings; verify heatsink requirements for each part.

Q: What is the impact of different gate charge values?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. IXFH12N100F (77 nC) and STW11NK90Z (115 nC) require more gate drive energy than STW6N95K5 (13 nC). Lower gate charge reduces switching losses and gate driver power consumption, beneficial in high-frequency applications. Higher gate charge may require more robust gate drive circuitry.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. IXFH12N100F, STW11NK90Z, and STW6N95K5 are all ROHS3 Compliant with MSL 1 (Unlimited) rating and REACH Unaffected status. Regulatory equivalence is confirmed across all three parts.

Q: Which part should be selected for maximum voltage margin?

A: IXFH12N100F provides the highest voltage rating at 1000V, offering maximum voltage margin above typical circuit operating points. This part is recommended when voltage stress is a design constraint or when future design modifications may increase operating voltage.

Q: What inventory considerations apply to these parts?

A: IXFH12N100F has 1397 pcs available, STW11NK90Z has 1771 pcs, and STW6N95K5 has 65200 pcs in stock. STW6N95K5 offers significantly higher availability for high-volume production requirements.