IXFH11N80 Equivalent & Substitute Parts

Part Overview

The IXFH11N80 is an N-Channel 800V 11A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is rated for 300W power dissipation and is housed in a TO-247AD through-hole package. The part is currently Active in product status with 963 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the same voltage class (800V Drain-Source Voltage) and comparable current ratings. Alternative devices may be required due to inventory availability, manufacturing lead times, or specific application requirements for enhanced performance characteristics such as reduced on-state resistance or improved gate charge specifications.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	11	A
On-State Resistance (Rds On) @ 500mA, 10V	950	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	155	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Primary Matching Criteria:

Drain-Source Voltage (Vdss): 800V (exact match required)
FET Type: N-Channel (exact match required)
Package Type: TO-247-3 or compatible through-hole TO-247 variants
Operating Temperature Range: -55°C to 150°C (exact match required)

Secondary Performance Criteria:

Continuous Drain Current (Id): 11A or greater
On-State Resistance (Rds On): Equal to or lower than 950 mOhm
Gate Charge (Qg): Lower values indicate improved switching performance
Power Dissipation: Equal to or greater than 300W

Parts are grouped into two categories:

Direct Equivalents (Same Current Rating): Parts with 11A continuous drain current rating that maintain 800V Vdss and TO-247-3 packaging.

Higher Current Alternatives: Parts with drain current ratings exceeding 11A, providing enhanced current handling capability while maintaining voltage and package compatibility.

Lower Current Alternatives: Parts with drain current ratings below 11A are listed for reference but represent reduced performance capability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Package	Status
IXFH11N80	IXYS	800	11	950	155	300	TO-247AD	Active
IXFH14N80P	IXYS	800	14	720	61	400	TO-247AD	Active
APT11N80BC3G	Microchip Technology	800	11	450	60	156	TO-247	Active
SPW11N80C3FKSA1	Infineon Technologies	800	11	450	85	156	TO-247-3	Not For New Designs
SPW17N80C3FKSA1	Infineon Technologies	800	17	290	177	227	TO-247-3	Active
STW10NK80Z	STMicroelectronics	800	9	900	72	160	TO-247-3	Active
STW8NK80Z	STMicroelectronics	800	6.2	1500	46	140	TO-247-3	Active
IRFPC40PBF	Vishay Siliconix	600	6.8	1200	60	150	TO-247AC	Active

Engineering Selection Recommendations

Recommended Direct Substitutes (800V, 11A Class):

APT11N80BC3G (Microchip Technology): This part maintains the 11A continuous drain current and 800V Vdss specifications. It offers superior on-state resistance (450 mOhm versus 950 mOhm), resulting in lower conduction losses. Gate charge is reduced to 60 nC, improving switching performance. The device is Active in product status and ROHS3 compliant. Power dissipation rating of 156W is lower than the IXFH11N80, requiring thermal design verification for high-power applications.

SPW11N80C3FKSA1 (Infineon Technologies): This CoolMOS™ device matches the 11A current and 800V voltage specifications with identical on-state resistance (450 mOhm) and gate charge (85 nC) characteristics to the APT11N80BC3G. However, this part carries a "Not For New Designs" status, limiting its suitability for new product development. ROHS3 compliant with 156W power dissipation rating.

Higher Current Alternative (800V, 14A+ Class):

IXFH14N80P (IXYS): This device from the same manufacturer series provides 14A continuous drain current with reduced on-state resistance (720 mOhm) and significantly lower gate charge (61 nC). Power dissipation increases to 400W, supporting higher thermal loads. The part is Active in product status with 5910 units in inventory. Vgs(th) increases to 5.5V and maximum gate-source voltage extends to ±30V.

SPW17N80C3FKSA1 (Infineon Technologies): This CoolMOS™ device offers 17A continuous drain current with the lowest on-state resistance (290 mOhm) among all listed alternatives. Gate charge of 177 nC is higher due to increased current capability. Power dissipation of 227W is intermediate. The part is Active in product status with 9900 units in inventory.

Lower Current Alternatives (Not Recommended for Direct Substitution):

STW10NK80Z (STMicroelectronics): Provides 9A continuous drain current, below the 11A requirement. On-state resistance of 900 mOhm is comparable to the IXFH11N80. This part is suitable only for applications with reduced current demands.

STW8NK80Z (STMicroelectronics): Provides 6.2A continuous drain current with 1500 mOhm on-state resistance. This represents significant performance reduction and is not suitable for equivalent substitution.

IRFPC40PBF (Vishay Siliconix): This device operates at 600V Vdss, below the 800V specification of the IXFH11N80. It is not suitable for applications requiring 800V voltage rating and represents a different product class.

Compliance Status: All recommended substitutes are ROHS3 compliant and REACH unaffected, matching the regulatory status of the IXFH11N80.

Frequently Asked Questions (FAQ)

Q: Can the IXFH14N80P be used as a direct replacement for the IXFH11N80?

A: The IXFH14N80P is electrically compatible as a substitute. Both devices share 800V Vdss, TO-247AD packaging, and identical drive voltage specifications. The IXFH14N80P provides higher continuous drain current (14A versus 11A), lower on-state resistance (720 mOhm versus 950 mOhm), and increased power dissipation capability (400W versus 300W). Gate charge is significantly reduced (61 nC versus 155 nC), improving switching performance. The higher Vgs(th) (5.5V versus 4.5V) and extended Vgs(Max) (±30V versus ±20V) must be verified against gate driver specifications.

Q: What is the difference between the APT11N80BC3G and SPW11N80C3FKSA1?

A: Both devices maintain 11A continuous drain current and 800V Vdss. The APT11N80BC3G is manufactured by Microchip Technology and carries Active product status, suitable for new designs. The SPW11N80C3FKSA1 is manufactured by Infineon Technologies and carries "Not For New Designs" status, limiting its use to legacy or maintenance applications. Electrically, both offer identical on-state resistance (450 mOhm) but differ in gate charge (60 nC versus 85 nC) and input capacitance specifications. The APT11N80BC3G is the preferred choice for new product development.

Q: Why is the IRFPC40PBF listed if it cannot substitute the IXFH11N80?

A: The IRFPC40PBF is included for reference to demonstrate the importance of voltage rating matching. This device operates at 600V Vdss, which is insufficient for applications requiring 800V rated components. Using a 600V device in an 800V application creates unacceptable reliability and safety risks. This part is not a valid substitute.

Q: Can I use the SPW17N80C3FKSA1 in place of the IXFH11N80 if my application requires higher current capability?

A: Yes, the SPW17N80C3FKSA1 is electrically compatible and provides enhanced performance. The 17A continuous drain current exceeds the 11A requirement, and the 290 mOhm on-state resistance is significantly lower than the 950 mOhm of the IXFH11N80, reducing conduction losses. Power dissipation capability of 227W is lower than the IXFH11N80's 300W rating, requiring thermal design verification. The device is Active in product status with high inventory availability (9900 units). Gate charge of 177 nC is higher, which may increase switching losses depending on gate driver characteristics.

Q: Are there any package compatibility issues between TO-247AD and TO-247-3?

A: The TO-247AD and TO-247-3 are both three-lead through-hole packages with identical pin configurations and mechanical dimensions. They are mechanically and electrically interchangeable in PCB layouts designed for TO-247-3 packages. The "AD" designation in TO-247AD refers to a specific variant within the TO-247 family but maintains full compatibility with standard TO-247-3 footprints.

Q: What does "Not For New Designs" status mean for the SPW11N80C3FKSA1?

A: "Not For New Designs" indicates that the manufacturer (Infineon Technologies) has discontinued active development and marketing of this part. While the device remains functional and available in inventory, it is not recommended for incorporation into new product designs. Existing designs using this part may continue to source it, but new applications should select Active status alternatives such as the APT11N80BC3G or IXFH14N80P.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three primary factors: (1) Current requirement—if your application requires exactly 11A, the APT11N80BC3G or IXFH14N80P are suitable; if higher current is needed, the SPW17N80C3FKSA1 is appropriate. (2) Thermal design—verify that the power dissipation rating of the selected device matches or exceeds your calculated losses. (3) Gate driver compatibility—confirm that your gate driver can accommodate the Vgs(th) and Vgs(Max) specifications of the selected device. All recommended substitutes maintain 800V Vdss and -55°C to 150°C operating temperature range.

Q: Why does the IXFH11N80 have higher gate charge (155 nC) compared to the APT11N80BC3G (60 nC)?

A: Gate charge is a function of device design and manufacturing process. The IXFH11N80 exhibits higher gate charge, which increases the energy required to switch the device and may increase switching losses in high-frequency applications. The APT11N80BC3G's lower gate charge (60 nC) indicates a more optimized design for switching performance. However, the IXFH11N80's higher power dissipation rating (300W versus 156W) suggests it is designed for different thermal and application profiles.

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