IXFH10N90 N-Channel 900V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH10N90 is an N-Channel 900V 10A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD package. This device is classified as obsolete, making substitute parts necessary for new designs and ongoing production requirements. The part operates across a temperature range of -55°C to 150°C and dissipates up to 300W at the case temperature. Equivalent and substitute MOSFETs must maintain compatibility with the electrical specifications and through-hole TO-247 mounting configuration.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	10	A
On-State Resistance (Rds On) @ 5A, 10V	1.1	Ohm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	155	nC
Input Capacitance (Ciss) @ 25V	4200	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitute parts for the IXFH10N90 are selected based on the following critical parameters:

Voltage Rating (Vdss): All substitutes must support 900V or higher drain-to-source voltage to ensure safe operation in the intended application.

Current Rating (Id): Substitutes must support continuous drain current of 10A or greater at 25°C to handle the same load conditions.

On-State Resistance (Rds On): Lower or equivalent Rds On values ensure comparable conduction losses and thermal performance.

Gate Charge (Qg): Similar gate charge values maintain consistent switching characteristics and gate drive requirements.

Package and Mounting: All substitutes use TO-247-3 through-hole packaging to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature: All substitutes operate across the -55°C to 150°C range, maintaining thermal compatibility.

The substitute parts are grouped into two categories: direct replacements from STMicroelectronics (SuperMESH™ series) and alternative manufacturers (Vishay Siliconix, IXYS higher-voltage variants).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (Ohm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Status	Package
IXFH10N90	IXYS	900	10	1.1	155	4200	300	Obsolete	TO-247-3
STW12NK90Z	STMicroelectronics	900	11	0.88	152	3500	230	Active	TO-247-3
STW11NK90Z	STMicroelectronics	900	9.2	0.98	115	3000	200	Active	TO-247-3
STW9NK90Z	STMicroelectronics	900	8	1.3	72	2115	160	Active	TO-247-3
STW7NK90Z	STMicroelectronics	900	5.8	2	60.5	1350	140	Active	TO-247-3
STW6N95K5	STMicroelectronics	950	9	1.25	13	450	90	Active	TO-247-3
IRFPF50	Vishay Siliconix	900	6.7	1.6	200	2900	190	Active	TO-247-3
IXFH12N100	IXYS	1000	12	1.05	155	4000	300	Active	TO-247-3

Engineering Selection Recommendations

Primary Substitute: STW12NK90Z

The STW12NK90Z from STMicroelectronics is the recommended primary substitute. It matches the 900V voltage rating, exceeds the 10A current requirement at 11A, and provides superior on-state resistance (0.88 Ohm vs. 1.1 Ohm), resulting in lower conduction losses. The part is in active production status with RoHS3 compliance and REACH unaffected certification. Gate charge remains comparable at 152 nC, ensuring compatible gate drive circuits.

Secondary Substitute: STW11NK90Z

The STW11NK90Z provides near-equivalent performance with 9.2A continuous current, 900V voltage rating, and 0.98 Ohm on-state resistance. This part is suitable for applications where the 10A requirement can tolerate slight margin reduction. Active production status and RoHS3 compliance are confirmed.

Alternative for Lower Current Applications: STW9NK90Z

For applications where continuous current can be reduced to 8A, the STW9NK90Z offers improved gate charge characteristics (72 nC) and lower input capacitance (2115 pF), enabling faster switching. This part maintains 900V rating and active production status.

Higher Voltage Option: IXFH12N100

The IXFH12N100 from IXYS provides 1000V voltage rating with 12A current capability, suitable for applications requiring higher voltage margin. On-state resistance is 1.05 Ohm. This part maintains the same manufacturer lineage and is in active production with RoHS3 compliance.

Vishay Alternative: IRFPF50

The IRFPF50 from Vishay Siliconix matches the 900V rating but supports only 6.7A continuous current. This part is suitable only for applications with reduced current requirements. RoHS non-compliance status should be evaluated against design requirements.

Frequently Asked Questions (FAQ)

Q: Can STW12NK90Z directly replace IXFH10N90 without circuit modifications?

A: Yes. The STW12NK90Z maintains identical voltage rating (900V), exceeds current rating (11A vs. 10A), and uses the same TO-247-3 package. The lower on-state resistance (0.88 Ohm vs. 1.1 Ohm) improves thermal performance. Gate charge (152 nC vs. 155 nC) and threshold voltage (4.5V) are compatible with existing gate drive circuits.

Q: Why does STW6N95K5 show significantly lower gate charge (13 nC)?

A: The STW6N95K5 belongs to the SuperMESH5™ series with different internal architecture, resulting in substantially lower gate charge. This part is suitable only for applications where the 9A current rating and 90W power dissipation are acceptable, as these parameters differ significantly from the IXFH10N90.

Q: Is the IRFPF50 suitable as a substitute?

A: The IRFPF50 is not recommended as a primary substitute due to reduced continuous current rating (6.7A vs. 10A). Use this part only if application current requirements are confirmed below 6.7A. Higher on-state resistance (1.6 Ohm) and higher gate charge (200 nC) also indicate different switching characteristics.

Q: What is the impact of lower on-state resistance in STW12NK90Z?

A: Lower on-state resistance (0.88 Ohm vs. 1.1 Ohm) reduces conduction losses and heat generation. At 10A continuous current, this represents approximately 12% reduction in I²R losses, improving overall circuit efficiency and reducing thermal management requirements.

Q: Are all substitute parts RoHS compliant?

A: STMicroelectronics parts (STW series) and IXFH12N100 are RoHS3 compliant. IRFPF50 is RoHS non-compliant. Verify compliance requirements for your specific application before selection.

Q: Can I use IXFH12N100 in place of IXFH10N90?

A: Yes, with application verification. The IXFH12N100 provides higher voltage rating (1000V vs. 900V), higher current (12A vs. 10A), and maintains the same manufacturer series. The 100V higher voltage rating provides additional safety margin. Verify that the application circuit can tolerate the slightly different on-state resistance (1.05 Ohm vs. 1.1 Ohm).

Q: What is the difference between TO-247AD and TO-247-3 packages?

A: Both are through-hole TO-247 variants with three leads (Gate, Drain, Source). The primary difference is in lead configuration and isolation characteristics. Verify PCB footprint compatibility before substitution, as some layout variations may exist between manufacturers.

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