IXFH10N100P N-Channel 1000V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH10N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 10A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatible mechanical packaging and thermal characteristics. Alternative devices may be required due to inventory availability, lead time considerations, or application-specific thermal management needs.

Substiute Parts

IXFH10N100P

IXYSIn Stock: 5859IXFH10N100P Datasheet

Current PartRFQ

STW9NK90Z

STMicroelectronicsIn Stock: 19312STW9NK90Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH10N100P is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute device must support the application's maximum drain-to-source voltage. The IXFH10N100P operates at 1000V; substitutes operating at lower voltage ratings (such as 900V) are suitable only for applications where the actual operating voltage does not exceed the substitute's Vdss rating.

Current Handling Capacity: Continuous drain current at 25°C must meet or exceed the application requirement. The IXFH10N100P provides 10A; substitutes with lower current ratings require verification that peak and continuous current demands do not exceed the substitute's specification.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Devices with comparable or lower Rds On values maintain equivalent or improved efficiency characteristics.

Package and Mounting Compatibility: Both the main part and substitute must use compatible through-hole packages (TO-247-3 or TO-247AD) to ensure mechanical fit and thermal interface compatibility.

Regulatory and Compliance Status: All substitute parts must maintain Active product status and equivalent RoHS3 compliance to ensure long-term availability and regulatory alignment.

Parameter Comparison

Engineering Selection Recommendations

IXFH10N100P (Primary Selection)

The IXFH10N100P remains the primary selection for applications requiring the full 1000V voltage rating and 10A continuous current capacity. This device provides the highest power dissipation capability (380W) and is suitable for high-voltage switching applications with demanding thermal requirements. Active product status and RoHS3 compliance ensure continued availability and regulatory alignment.

STW9NK90Z (Conditional Substitute)

The STW9NK90Z from STMicroelectronics is suitable as a substitute only in applications where the maximum operating voltage does not exceed 900V and the continuous current requirement does not exceed 8A. This device features lower input capacitance (2115 pF versus 3030 pF), which may provide faster switching characteristics in gate-drive-limited circuits. However, the reduced power dissipation rating (160W versus 380W) requires thermal design verification for applications approaching the IXFH10N100P's thermal envelope. Both devices maintain identical operating temperature ranges (-55°C to 150°C) and equivalent compliance certifications.

The STW9NK90Z is Active in product status with RoHS3 compliance, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the STW9NK90Z directly replace the IXFH10N100P in all applications?

A: No. The STW9NK90Z operates at 900V maximum versus the IXFH10N100P's 1000V rating. Substitution is valid only when the application's actual operating voltage remains below 900V. Additionally, the STW9NK90Z is rated for 8A continuous current versus 10A for the IXFH10N100P. Applications requiring the full 10A rating or operating near 1000V must use the IXFH10N100P.

Q: Are the TO-247-3 and TO-247AD packages mechanically compatible?

A: Both packages are TO-247 variants with three leads and are mechanically compatible for through-hole mounting. The IXFH10N100P uses TO-247AD packaging while the STW9NK90Z uses TO-247-3 packaging. Both fit standard TO-247 footprints and thermal interface hardware.

Q: How does the lower power dissipation of the STW9NK90Z affect thermal design?

A: The STW9NK90Z is rated for 160W maximum power dissipation compared to 380W for the IXFH10N100P. In applications where the IXFH10N100P dissipates power approaching its 380W limit, the STW9NK90Z requires enhanced heatsinking or reduced operating current to maintain equivalent junction temperatures. Thermal analysis is necessary when substituting into high-power applications.

Q: What is the significance of the different gate threshold voltages?

A: The IXFH10N100P has a gate threshold voltage of 6.5V at 1mA, while the STW9NK90Z is 4.5V at 100µA. These different measurement conditions reflect different device characteristics. The STW9NK90Z's lower threshold voltage may result in faster turn-on at lower gate drive voltages, but gate drive circuit compatibility must be verified for the specific application.

Q: Do both devices have equivalent regulatory compliance?

A: Yes. Both the IXFH10N100P and STW9NK90Z are RoHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes. Both maintain Active product status, ensuring continued manufacturing and supply availability.

Q: What is the impact of the higher gate charge in the STW9NK90Z?

A: The STW9NK90Z has a gate charge of 72 nC at 10V compared to 56 nC for the IXFH10N100P. Higher gate charge requires greater gate drive current or longer switching times. In gate-drive-limited applications, this may result in slower switching speeds and increased switching losses. Gate driver capability must be verified when substituting.