IXFE80N50 Equivalent & Substitute Parts

Part Overview

The IXFE80N50 is an N-Channel 500V 72A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal operating parameters while accommodating available packaging and product status constraints.

Substiute Parts

IXFE80N50

IXYSIn Stock: 1131IXFE80N50 Datasheet

Current PartRFQ

IXFN110N60P3

IXYSIn Stock: 68697IXFN110N60P3 Datasheet

DirectRFQ

APT58M50JU2

Microchip TechnologyIn Stock: 1170APT58M50JU2 Datasheet

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STE53NC50

STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFE80N50 is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Drain to Source Voltage (Vdss) rating equal to or greater than 500V to ensure safe operation within the original design envelope.

Current Capacity: Continuous drain current (Id) at 25°C must be sufficient to handle the 72A requirement. Parts with equal or higher current ratings are acceptable.

On-State Resistance (Rds On): The maximum on-state resistance directly affects power dissipation and thermal performance. Substitute parts with comparable or lower Rds On values maintain equivalent or improved efficiency.

Package and Mounting: Physical compatibility requires SOT-227B or equivalent miniBLOC chassis mount packaging to ensure mechanical fit and thermal interface compatibility.

Gate Charge and Threshold Voltage: These parameters affect switching characteristics and gate drive requirements. Substitutes with similar gate charge and threshold voltage specifications maintain compatible drive circuit operation.

Product Status and Compliance: Active product status ensures ongoing availability and support. RoHS3 compliance and REACH unaffected status provide regulatory alignment for new designs.

Parameter Comparison

Engineering Selection Recommendations

IXFN110N60P3 (Direct Manufacturer Upgrade): This IXYS HiPerFET™ and Polar3™ series device provides the closest electrical and mechanical compatibility. It maintains the same SOT-227B package and chassis mount configuration. The 600V rating provides additional voltage margin, while the 90A continuous current rating exceeds the original 72A requirement. Gate charge is reduced to 245 nC, improving switching efficiency. Product status is active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. This substitute is suitable for direct replacement in applications where the higher voltage rating and improved thermal performance (1500W vs. 580W) provide design benefits.

APT58M50JU2 (Microchip Technology Alternative): This POWER MOS 8™ series device maintains the 500V voltage rating and SOT-227 package compatibility. The 58A continuous current rating is lower than the original 72A specification, making this substitute appropriate only for applications with reduced current demands. On-state resistance of 65 mOhm is slightly higher than the original 55 mOhm, resulting in marginally increased power dissipation. Product status is active with ROHS3 compliance. This option is suitable for cost-sensitive applications where current requirements do not exceed 58A.

STE53NC50 (STMicroelectronics Alternative): This PowerMESH™ II series device maintains the 500V voltage rating but uses ISOTOP® packaging instead of SOT-227B. The 53A continuous current rating is significantly lower than the original 72A specification. On-state resistance of 80 mOhm is substantially higher, resulting in increased power dissipation and thermal load. Gate charge is elevated to 434 nC, requiring higher gate drive capability. Product status is active with ROHS3 compliance. This substitute is suitable only for applications with current requirements below 53A and where ISOTOP® package compatibility is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the IXFN110N60P3 be used as a direct replacement for the IXFE80N50?

A: Yes. The IXFN110N60P3 maintains identical SOT-227B packaging and chassis mount configuration. The 600V rating is compatible with 500V designs, providing additional voltage margin. The 90A current rating exceeds the 72A requirement. Gate charge reduction improves switching performance. Active product status ensures availability.

Q: What is the primary limitation of the APT58M50JU2 as a substitute?

A: The continuous drain current rating of 58A is below the original 72A specification. This substitute is suitable only for applications where actual current demand does not exceed 58A. On-state resistance is also higher at 65 mOhm compared to 55 mOhm, resulting in increased power dissipation.

Q: Why does the STE53NC50 use a different package type?

A: The STE53NC50 uses ISOTOP® packaging rather than SOT-227B. While both are chassis mount configurations, mechanical fit and thermal interface characteristics differ. Verification of mechanical compatibility with the original PCB layout and heatsink interface is required before substitution.

Q: How does gate charge affect circuit design when substituting these parts?

A: Gate charge determines the energy required to switch the MOSFET and affects switching speed. The IXFN110N60P3 has reduced gate charge (245 nC vs. 380 nC), allowing faster switching with lower gate drive power. The STE53NC50 has increased gate charge (434 nC), requiring higher gate drive capability. Gate drive circuits must be verified for compatibility with the selected substitute.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFN110N60P3, APT58M50JU2, and STE53NC50 are all ROHS3 compliant. The original IXFE80N50 RoHS status is not specified. All substitutes are REACH unaffected and carry EAR99 ECCN classification.

Q: What is the thermal performance difference between substitutes?

A: The IXFN110N60P3 has the highest power dissipation rating at 1500W, providing superior thermal capability. The IXFE80N50 and APT58M50JU2 are comparable at 580W and 543W respectively. The STE53NC50 has the lowest rating at 460W. Higher power dissipation ratings allow operation at higher currents or ambient temperatures without exceeding junction temperature limits.

Q: Can the operating temperature range affect substitute selection?

A: The IXFN110N60P3 extends the lower temperature limit to -55°C compared to -40°C for the original part. All substitutes maintain the upper temperature limit of 150°C. For applications requiring operation below -40°C, the IXFN110N60P3 is the only suitable option.