IXFE73N30Q N-Channel MOSFET 300V 66A Equivalent & Substitute Parts

Part Overview

The IXFE73N30Q is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage and 66A continuous drain current at 25°C. This device is housed in a SOT-227B (miniBLOC) chassis mount package and is designed for high-power switching applications requiring robust thermal management. The part operates across a temperature range of -55°C to 150°C (junction temperature) with a maximum power dissipation of 400W at case temperature.

The IXFE73N30Q is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IXFE73N30Q

IXYSIn Stock: 68650IXFE73N30Q Datasheet

Current PartRFQ

APT30M40JVFR

Microchip TechnologyIn Stock: 717APT30M40JVFR Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFE73N30Q is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating: The substitute part must maintain a Vdss rating of 300V to ensure safe operation within the same circuit topology and voltage stress limits.

Current Rating: The substitute part must support a continuous drain current (Id) at or above 66A at 25°C to handle the same load conditions without thermal derating.

On-State Resistance (Rds On): The substitute part must maintain comparable or lower Rds On values to ensure equivalent or improved power efficiency and thermal performance.

Gate Charge (Qg): The substitute part must have gate charge characteristics compatible with the existing gate drive circuitry to ensure proper switching performance.

Package and Mounting: The substitute part must be compatible with the SOT-227B chassis mount footprint or provide equivalent thermal and mechanical mounting characteristics.

Compliance and Status: The substitute part must maintain RoHS3 compliance and active or equivalent product status to ensure long-term availability and regulatory alignment.

The APT30M40JVFR from Microchip Technology meets these substitution criteria and is listed as an equivalent alternative.

Parameter Comparison

Engineering Selection Recommendations

The APT30M40JVFR is a suitable substitute for the obsolete IXFE73N30Q based on the following engineering criteria:

Electrical Equivalence: Both parts share identical voltage ratings (300V Vdss) and comparable current ratings (66A vs. 70A), ensuring functional compatibility in the same circuit topology. The substitute's lower on-state resistance (40 mOhm vs. 46 mOhm) provides improved power efficiency and reduced thermal dissipation.

Thermal Performance: The APT30M40JVFR is rated for 450W maximum power dissipation compared to the IXFE73N30Q's 400W, providing additional thermal margin. Both devices operate across the same temperature range (-55°C to 150°C junction temperature).

Product Status and Availability: The IXFE73N30Q is classified as obsolete, creating supply chain risk. The APT30M40JVFR is actively manufactured by Microchip Technology, ensuring long-term availability and continued support.

Regulatory Compliance: Both parts are ROHS3 compliant, REACH unaffected, and carry identical moisture sensitivity levels (MSL 1), meeting current regulatory requirements for electronic components.

Package Considerations: Both parts utilize SOT-227-4 miniBLOC chassis mount packages. Physical footprint compatibility must be verified during design transition, as the IXFE73N30Q uses SOT-227B designation while the APT30M40JVFR uses ISOTOP® designation. Mechanical mounting and thermal interface requirements should be confirmed with PCB layout and thermal management design.

Gate Drive Evaluation: The APT30M40JVFR exhibits higher gate charge (425 nC vs. 190 nC) and input capacitance (10200 pF vs. 6400 pF). Existing gate drive circuitry must be evaluated to ensure adequate drive current and switching speed performance with the substitute part.

Frequently Asked Questions (FAQ)

Q: Can the APT30M40JVFR directly replace the IXFE73N30Q without circuit modifications?

A: The APT30M40JVFR is electrically compatible with the IXFE73N30Q for voltage and current ratings. However, the substitute part has higher gate charge (425 nC vs. 190 nC) and input capacitance (10200 pF vs. 6400 pF). Gate drive circuitry must be evaluated to ensure adequate drive current and switching performance. Physical footprint compatibility must also be confirmed, as package designations differ (SOT-227B vs. ISOTOP®).

Q: What are the key electrical differences between these two parts?

A: The primary electrical differences are: (1) Continuous drain current rating is higher on the substitute (70A vs. 66A); (2) On-state resistance is lower on the substitute (40 mOhm vs. 46 mOhm), improving efficiency; (3) Gate charge is significantly higher on the substitute (425 nC vs. 190 nC); (4) Input capacitance is higher on the substitute (10200 pF vs. 6400 pF); (5) Maximum gate voltage rating is higher on the substitute (±30V vs. ±20V). All other parameters, including voltage rating, threshold voltage, and operating temperature range, are matched.

Q: Why is the IXFE73N30Q classified as obsolete?

A: The IXFE73N30Q is an older generation device from IXYS' HiPerFET™ Q Class series. Manufacturers discontinue products to focus production on newer technology nodes and active product lines. The APT30M40JVFR from Microchip Technology's POWER MOS V® series represents a current-generation alternative with improved performance characteristics and active manufacturing status.

Q: Are both parts RoHS3 compliant?

A: Yes, both the IXFE73N30Q and APT30M40JVFR are ROHS3 compliant and REACH unaffected. Both parts carry MSL 1 (Unlimited) moisture sensitivity levels, meeting current regulatory requirements for electronic components.

Q: What is the impact of higher gate charge on the substitute part?

A: The APT30M40JVFR has gate charge of 425 nC compared to 190 nC for the IXFE73N30Q. Higher gate charge requires more charge to be supplied by the gate drive circuit to switch the device. This may increase switching losses and require evaluation of gate drive current capability. If the existing gate drive circuit has insufficient current capacity, switching speed may be reduced or gate drive circuit modifications may be necessary.

Q: Are the package footprints identical?

A: Both parts use SOT-227-4 miniBLOC chassis mount packages. However, the IXFE73N30Q is designated as SOT-227B while the APT30M40JVFR uses ISOTOP® designation. Physical footprint compatibility must be verified with the PCB layout and mechanical mounting design. Thermal interface material and mounting hardware compatibility should also be confirmed.

Q: What is the advantage of the substitute part's lower on-state resistance?

A: The APT30M40JVFR has an on-state resistance of 40 mOhm compared to 46 mOhm for the IXFE73N30Q. Lower on-state resistance reduces conduction losses (I²R losses), resulting in lower heat generation, improved power efficiency, and reduced thermal stress on the device and surrounding circuitry. This provides a performance advantage in high-current switching applications.

Q: Can I use the APT30M40JVFR in applications requiring the full ±20V gate voltage range of the original part?

A: Yes. The APT30M40JVFR is rated for ±30V maximum gate voltage, which exceeds the ±20V requirement of the IXFE73N30Q. The substitute part is compatible with gate drive circuits designed for the original part's voltage range.