IXFE55N50 Equivalent & Substitute Parts

Part Overview

The IXFE55N50 is an N-Channel 500V 47A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. Substitute parts must maintain compatibility across critical electrical parameters including drain-source voltage rating, continuous drain current capacity, and thermal performance characteristics while accommodating package and mounting variations.

Substiute Parts

IXFE55N50
IXYSIn Stock: 820IXFE55N50 Datasheet
IXFE55N50
Current Part
APL502J
Microchip TechnologyIn Stock: 883APL502J Datasheet
APL502J
Direct
STE48NM50
STMicroelectronicsIn Stock: 1678STE48NM50 Datasheet
STE48NM50
Similar
STE53NC50
STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet
STE53NC50
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 47 A (Tc)
On-State Resistance (Rds On Max) 90 mOhm @ 27.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) 4.5 V @ 8mA
Power Dissipation (Max) 500 W (Tc)
Operating Temperature Range -40 to 150 °C (TJ)
Package Type SOT-227B, miniBLOC Chassis Mount
FET Technology MOSFET (Metal Oxide) N-Channel

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating equal to or greater than 500V to ensure safe operation within the original design envelope.

Current Capacity: Continuous drain current (Id) at 25°C must be equal to or exceed 47A to support the original circuit current requirements.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed 90mOhm at comparable gate-source voltage and drain current conditions to maintain thermal and efficiency performance.

Gate Threshold Voltage: Vgs(th) must remain within compatible ranges (approximately 4V to 4.5V) to ensure proper gate drive circuit operation.

Power Dissipation: Thermal capability must support the 500W maximum power dissipation requirement.

Mounting and Package: Chassis mount configuration is required; package variations (SOT-227B, ISOTOP®) are acceptable provided mechanical and thermal interface compatibility is maintained.

Product Status: Active status substitutes are preferred for long-term availability and supply chain stability.

Parameter Comparison

Parameter IXFE55N50 APL502J STE48NM50 STE53NC50
Manufacturer IXYS Microchip Technology STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active
Vdss (V) 500 500 550 500
Id @ 25°C (A) 47 52 48 53
Rds On Max (mOhm) 90 @ 27.5A, 10V 90 @ 26A, 12V 100 @ 24A, 10V 80 @ 27A, 10V
Vgs(th) Max (V) 4.5 @ 8mA 4 @ 2.5mA 5 @ 250µA 4 @ 250µA
Power Dissipation Max (W) 500 568 450 460
Operating Temperature (°C) -40 to 150 -55 to 150 to 150 to 150
Package SOT-227B, miniBLOC ISOTOP® ISOTOP ISOTOP
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: STE53NC50 (STMicroelectronics)

The STE53NC50 is the optimal substitute for the IXFE55N50. This device meets or exceeds all critical electrical parameters: 500V Vdss rating, 53A continuous drain current (exceeding the 47A requirement), and 80mOhm on-state resistance (superior to the 90mOhm specification). The part is in active production status, ensuring long-term availability and supply chain stability. RoHS3 compliance and REACH unaffected status align with modern regulatory requirements. The ISOTOP® package provides equivalent thermal performance to the original SOT-227B chassis mount configuration.

Secondary Substitute: APL502J (Microchip Technology)

The APL502J provides functional equivalence with 500V Vdss rating, 52A continuous drain current, and 90mOhm on-state resistance matching the original specification. This device offers enhanced power dissipation capability (568W versus 500W) and extended operating temperature range (-55°C to 150°C). Active product status and RoHS3 compliance support procurement continuity. The ISOTOP® package maintains chassis mount compatibility.

Tertiary Substitute: STE48NM50 (STMicroelectronics)

The STE48NM50 operates at an elevated 550V Vdss rating with 48A continuous drain current and 100mOhm on-state resistance. This part is suitable for applications where the higher voltage rating provides design margin. Active status and RoHS3 compliance are confirmed. The ISOTOP package maintains mechanical compatibility. Note that power dissipation (450W) is below the original 500W specification.

All substitute parts maintain N-Channel MOSFET technology, chassis mount configuration, and compatibility with standard gate drive circuits operating at 10V to 15V drive voltage levels.

Frequently Asked Questions (FAQ)

Q: Can the STE53NC50 directly replace the IXFE55N50 without circuit modification?

A: The STE53NC50 is electrically compatible with the IXFE55N50 across all critical parameters. The primary consideration is mechanical mounting: the ISOTOP® package differs from the original SOT-227B miniBLOC package. Verification of heatsink interface compatibility and mounting hole alignment is required before installation.

Q: What is the significance of the higher Vdss rating on the STE48NM50 (550V versus 500V)?

A: The 550V rating on the STE48NM50 provides additional voltage margin and does not create incompatibility with the original 500V design. However, the lower power dissipation rating (450W versus 500W) may be limiting in high-power applications. Selection depends on thermal requirements of the specific application.

Q: Are all substitute parts RoHS compliant?

A: Yes. APL502J, STE48NM50, and STE53NC50 are all ROHS3 compliant. The original IXFE55N50 RoHS status was not specified in the available data.

Q: How do the on-state resistance specifications compare across substitutes?

A: The STE53NC50 offers the lowest on-state resistance at 80mOhm, providing superior efficiency. The IXFE55N50 and APL502J both specify 90mOhm. The STE48NM50 specifies 100mOhm. Lower on-state resistance reduces power dissipation and heat generation during operation.

Q: What package considerations apply when substituting these parts?

A: The IXFE55N50 uses SOT-227B miniBLOC packaging. All three substitute parts use ISOTOP® or ISOTOP packaging. While both are chassis mount configurations, the physical dimensions and heatsink interface may differ. Mechanical verification of mounting compatibility is mandatory before design implementation.

Q: Do all parts support the same gate drive voltage?

A: The IXFE55N50 specifies 10V drive voltage. APL502J supports 15V drive voltage, while STE48NM50 and STE53NC50 support 10V drive voltage. Gate drive circuits designed for 10V operation are compatible with all substitutes. Circuits designed for 15V operation are compatible only with APL502J.

Q: Which substitute offers the best long-term availability?

A: All three substitute parts are in active production status. STE53NC50 has the highest current inventory (3500 pcs), followed by APL502J (833 pcs) and STE48NM50 (1591 pcs). Active status across all options ensures sustained supply chain support.

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