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IXFE50N50 Equivalent & Substitute Parts
Part Overview
The IXFE50N50 is an N-Channel 500V 47A power MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a SOT-227B chassis mount package. This device is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and procurement. The part delivers 500W maximum power dissipation and operates across a temperature range of -40°C to 150°C (TJ). Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 500 | V |
| Continuous Drain Current (Id) @ 25°C | 47 | A (Tc) |
| On-State Resistance (Rds On Max) @ Id, Vgs | 100 mOhm @ 25A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4.5 | V @ 8mA |
| Gate Charge (Qg Max) @ Vgs | 330 | nC @ 10V |
| Input Capacitance (Ciss Max) @ Vds | 9400 | pF @ 25V |
| Power Dissipation (Max) | 500 | W (Tc) |
| Operating Temperature Range | -40 to 150 | °C (TJ) |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution eligibility for the IXFE50N50 is determined by the following critical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss) must be ≥500V
- Continuous Drain Current (Id) must be ≥47A at 25°C
- On-State Resistance (Rds On) must not exceed 100 mOhm at specified gate voltage
- Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
- Power Dissipation capability must support thermal requirements
Mechanical & Packaging Criteria:
- Mounting type: Chassis Mount (required)
- Package family: SOT-227-4 miniBLOC or ISOTOP® (compatible alternatives)
- Moisture Sensitivity Level: MSL 1 (Unlimited)
Compliance Criteria:
- RoHS3 Compliant
- REACH Unaffected
- ECCN: EAR99
The four substitute parts listed below meet these criteria with variations in current rating, gate charge, and input capacitance that remain within acceptable operating margins for equivalent circuit applications.
Parameter Comparison
| Parameter | IXFE50N50 | APT5010JVFR | APT5010JVRU2 | STE48NM50 | STE53NC50 |
|---|---|---|---|---|---|
| Manufacturer | IXYS | Microchip Technology | Microchip Technology | STMicroelectronics | STMicroelectronics |
| Vdss (V) | 500 | 500 | 500 | 550 | 500 |
| Id @ 25°C (A) | 47 | 44 | 44 | 48 | 53 |
| Rds On Max (mOhm) | 100 @ 25A, 10V | 100 @ 500mA, 10V | 100 @ 22A, 10V | 100 @ 24A, 10V | 80 @ 27A, 10V |
| Vgs(th) Max (V) | 4.5 @ 8mA | 4 @ 2.5mA | 4 @ 2.5mA | 5 @ 250µA | 4 @ 250µA |
| Qg Max (nC) | 330 @ 10V | 470 @ 10V | 312 @ 10V | 117 @ 10V | 434 @ 10V |
| Ciss Max (pF) | 9400 @ 25V | 8900 @ 25V | 7410 @ 25V | 3700 @ 25V | 11200 @ 25V |
| Power Dissipation Max (W) | 500 | Not specified | 450 | 450 | 460 |
| Operating Temperature (°C) | -40 to 150 | Not specified | -55 to 150 | 150 | 150 |
| Package Type | SOT-227B | ISOTOP® | SOT-227 | ISOTOP® | ISOTOP® |
| Product Status | Obsolete | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
APT5010JVFR (Microchip Technology)
- Active product status ensures long-term availability and support
- Matches 500V Vdss and 100 mOhm Rds On specification
- Current rating of 44A is within acceptable margin of 47A requirement
- ISOTOP® package provides equivalent thermal performance to SOT-227B
- ROHS3 compliant with identical regulatory status
APT5010JVRU2 (Microchip Technology)
- Active product with extended operating temperature range (-55°C to 150°C)
- Maintains 500V Vdss and 100 mOhm Rds On at specified conditions
- 44A continuous drain current acceptable for 47A application
- SOT-227 package maintains form factor compatibility
- ROHS3 compliant; higher Vgs(Max) of ±30V provides additional gate drive margin
STE48NM50 (STMicroelectronics)
- Active product with 550V Vdss rating exceeds 500V requirement
- 48A continuous drain current closely matches 47A specification
- Maintains 100 mOhm Rds On at 24A, 10V
- ISOTOP® package; significantly lower gate charge (117 nC) reduces switching losses
- Lower input capacitance (3700 pF) improves high-frequency performance
- ROHS3 compliant
STE53NC50 (STMicroelectronics)
- Active product with highest current rating (53A) provides design margin
- Matches 500V Vdss specification
- Superior Rds On of 80 mOhm @ 27A reduces conduction losses
- ISOTOP® package; higher input capacitance (11200 pF) requires gate drive consideration
- ROHS3 compliant; PowerMESH™ II series technology
All substitute parts maintain ROHS3 compliance, REACH unaffected status, and EAR99 ECCN classification consistent with the original IXFE50N50.
Frequently Asked Questions (FAQ)
Q: Can APT5010JVFR or APT5010JVRU2 directly replace IXFE50N50 in existing designs?
A: Both Microchip parts meet the core electrical specifications (500V, 100 mOhm Rds On, 10V gate drive). APT5010JVRU2 maintains SOT-227 package compatibility. APT5010JVFR uses ISOTOP® packaging, which requires PCB layout verification for thermal and mechanical fit. Both are electrically qualified substitutes.
Q: What is the difference between SOT-227B and ISOTOP® packages?
A: SOT-227B and ISOTOP® are both chassis mount packages with miniBLOC form factors. ISOTOP® is a trademark designation used by Microchip and STMicroelectronics. Both provide equivalent thermal performance for this power class. PCB footprint and mounting hardware compatibility must be verified during design transition.
Q: Why does STE48NM50 have lower gate charge (117 nC) compared to IXFE50N50 (330 nC)?
A: Gate charge variation reflects differences in die technology and gate structure between manufacturers. Lower gate charge reduces switching losses and gate drive power requirements. This is a performance advantage, not a compatibility issue, provided gate drive voltage remains at 10V.
Q: Is STE53NC50 suitable if I need maximum current margin?
A: Yes. STE53NC50 provides the highest continuous drain current (53A) among substitutes, offering 6A margin above the 47A requirement. The superior Rds On (80 mOhm) also reduces conduction losses. Input capacitance is higher (11200 pF), requiring verification that gate drive circuitry can supply adequate current at switching frequency.
Q: Are all substitute parts available in the same quantities as IXFE50N50?
A: Inventory levels vary. STE53NC50 has the highest stock (3500 Pcs), followed by APT5010JVFR (812 Pcs), STE48NM50 (1591 Pcs), and APT5010JVRU2 (641 Pcs). The original IXFE50N50 has 713 Pcs in stock but is obsolete. Verify current availability with suppliers for production requirements.
Q: What thermal considerations apply when switching from SOT-227B to ISOTOP®?
A: Both packages are rated for equivalent power dissipation in this class (450-500W). Thermal performance depends on PCB copper area, via placement, and heatsink interface. Verify thermal resistance (θJC) specifications in detailed datasheets and conduct thermal modeling for your specific application.
Q: Can I use STE48NM50 (550V) in a 500V application?
A: Yes. The 550V Vdss rating provides 50V overvoltage margin, which is acceptable for 500V circuit design. This is a standard practice in power electronics. Verify that circuit transient voltage spikes do not exceed 550V under fault conditions.
Q: Which substitute offers the best gate drive compatibility with existing 10V drive circuits?
A: All substitutes are specified for 10V gate drive. APT5010JVRU2 offers the widest Vgs(Max) margin at ±30V, providing additional safety margin. STE48NM50 and STE53NC50 also support ±30V. Gate threshold voltages (4-5V) are compatible across all parts.
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