IXFE48N50Q N-Channel 500V 41A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFE48N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 41A continuous drain current at 25°C. This device is housed in a SOT-227B (miniBLOC) chassis mount package and is designed for high-power switching applications requiring robust thermal management. The part is classified as obsolete, making identification of equivalent and substitute components essential for ongoing system support, design updates, and procurement continuity.

Substiute Parts

IXFE48N50Q

IXYSIn Stock: 68912IXFE48N50Q Datasheet

Current PartRFQ

STE48NM50

STMicroelectronicsIn Stock: 1678STE48NM50 Datasheet

SimilarRFQ

STE53NC50

STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFE48N50Q is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

• Drain-to-Source Voltage (Vdss) must equal or exceed 500V
• Continuous Drain Current (Id) must meet or exceed 41A at 25°C
• On-State Resistance (Rds On) must not exceed the original specification to maintain thermal performance
• Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
• Mounting type must be Chassis Mount to ensure thermal interface compatibility
• Operating temperature range must support -40°C to 150°C (TJ) minimum

Identified Substitutes:

The STE48NM50 (STMicroelectronics) and STE53NC50 (STMicroelectronics) meet the electrical requirements for substitution. Both devices are N-Channel MOSFETs with Chassis Mount configurations and active product status, ensuring long-term availability and support.

Parameter Comparison

Engineering Selection Recommendations

STE48NM50 Selection Criteria:

The STE48NM50 provides electrical equivalence with improved performance characteristics. It exceeds the Vdss requirement (550V vs. 500V), matches the continuous drain current specification (48A vs. 41A), and delivers superior on-state resistance (100mOhm vs. 110mOhm). The device is manufactured by STMicroelectronics with active product status, ensuring sustained availability and technical support. ROHS3 compliance and REACH unaffected status align with the original part's regulatory standing. The ISOTOP® package provides equivalent thermal performance to the SOT-227B configuration for chassis mount applications.

STE53NC50 Selection Criteria:

The STE53NC50 offers the highest current capability (53A) and lowest on-state resistance (80mOhm), delivering superior thermal efficiency. Vdss equivalence (500V) matches the original specification exactly. This device is manufactured by STMicroelectronics with active product status. ROHS3 compliance and REACH unaffected status maintain regulatory alignment. The ISOTOP® package supports equivalent chassis mount thermal management. Gate charge is elevated (434nC vs. 190nC), requiring verification of gate drive circuit capability.

Regulatory and Compliance Alignment:

Both substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original IXFE48N50Q regulatory profile. Both are classified as active products, providing long-term procurement and technical support continuity.

Frequently Asked Questions (FAQ)

Q: Can the STE48NM50 or STE53NC50 be used as direct replacements for the IXFE48N50Q?

A: Both devices meet the electrical substitution criteria: N-Channel MOSFET topology, Vdss equal to or exceeding 500V, continuous drain current meeting or exceeding 41A, and Chassis Mount configuration. Package differences (ISOTOP® vs. SOT-227B) require mechanical interface verification for the specific application.

Q: What are the key differences between the two substitute parts?

A: The STE48NM50 provides current capability of 48A with 100mOhm on-state resistance and 117nC gate charge. The STE53NC50 provides higher current capability of 53A with superior on-state resistance of 80mOhm but elevated gate charge of 434nC. Selection depends on application current requirements and gate drive circuit specifications.

Q: Does the package change from SOT-227B to ISOTOP® affect thermal performance?

A: Both packages are Chassis Mount configurations designed for high-power applications. The ISOTOP® package is a standard industrial thermal interface. Mechanical mounting interface and thermal interface material compatibility must be verified for the specific application.

Q: Are there any gate drive circuit considerations when substituting these parts?

A: The STE48NM50 has lower gate charge (117nC) compared to the original (190nC), reducing gate drive requirements. The STE53NC50 has elevated gate charge (434nC), requiring gate drive circuit verification to ensure adequate switching speed and efficiency.

Q: What is the regulatory status of the substitute parts?

A: Both STE48NM50 and STE53NC50 are ROHS3 compliant and REACH unaffected, matching the original IXFE48N50Q regulatory profile. Both are active products with sustained manufacturer support.

Q: How do the gate threshold voltages compare?

A: The IXFE48N50Q has Vgs(th) of 4V at 4mA. The STE48NM50 has Vgs(th) of 5V at 250µA, and the STE53NC50 has Vgs(th) of 4V at 250µA. Gate threshold compatibility with existing drive circuitry must be confirmed.