IXFE180N10 Equivalent & Substitute Parts

Part Overview

The IXFE180N10 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 176A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the HiPerFET™ series. The IXFE180N10 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

IXFE180N10

IXYSIn Stock: 846IXFE180N10 Datasheet

Current PartRFQ

IXFN180N10

IXYSIn Stock: 1351IXFN180N10 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFE180N10 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal 100V
• FET Type: Must be N-Channel MOSFET
• Drive Voltage (Max Rds On): Must equal 10V
• Vgs(th) (Max) @ Id: Must equal 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: Must equal 360 nC @ 10V
• Vgs (Max): Must equal ±20V
• Input Capacitance (Ciss) (Max) @ Vds: Must equal 9100 pF @ 25V
• Operating Temperature Range: Must equal -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Must be Chassis Mount
• Package / Case: Must be SOT-227-4, miniBLOC

Performance Parameters (Allowable Variation):

• Current - Continuous Drain (Id) @ 25°C: Equal or greater than 176A (Tc)
• Rds On (Max) @ Id, Vgs: Equal or lower than 8mOhm
• Power Dissipation (Max): Equal or greater than 500W (Tc)

The IXFN180N10 meets all electrical and mechanical compatibility criteria and demonstrates improved performance specifications in current rating and power dissipation capacity.

Parameter Comparison

Engineering Selection Recommendations

The IXFN180N10 is the direct substitute for the obsolete IXFE180N10. Both devices are manufactured by IXYS and belong to the HiPerFET™ series. The IXFN180N10 maintains full electrical and mechanical compatibility with the IXFE180N10 across all critical parameters including voltage rating, gate charge, threshold voltage, and input capacitance.

The IXFN180N10 offers enhanced performance characteristics: continuous drain current is increased from 176A to 180A, and maximum power dissipation is increased from 500W to 600W. These improvements provide additional design margin without requiring circuit modifications.

The IXFN180N10 carries Active product status, ensuring ongoing availability and manufacturing support. The device is ROHS3 compliant, whereas the IXFE180N10 compliance status is not specified. Both devices maintain identical REACH and ECCN classifications, supporting equivalent regulatory compliance for export and procurement purposes.

Frequently Asked Questions (FAQ)

Q: Can the IXFN180N10 be used as a direct replacement for the IXFE180N10 in existing designs?

A: Yes. The IXFN180N10 maintains identical electrical specifications across all critical parameters including Vdss, Vgs(th), gate charge, and input capacitance. The package and mounting type are identical. No circuit modifications are required.

Q: What are the performance differences between these two devices?

A: The IXFN180N10 provides higher continuous drain current (180A versus 176A) and greater maximum power dissipation (600W versus 500W). These represent performance improvements that do not affect backward compatibility.

Q: Are there any compliance or regulatory differences?

A: Both devices share identical REACH and ECCN classifications. The IXFN180N10 is ROHS3 compliant. The IXFE180N10 compliance status is not specified. Both devices have unlimited moisture sensitivity level (MSL 1).

Q: Why is the IXFE180N10 classified as obsolete?

A: The IXFE180N10 is no longer in active production. The IXFN180N10 serves as the current production equivalent within the HiPerFET™ series.

Q: Are the SOT-227B packages identical between these devices?

A: Yes. Both devices use the SOT-227-4 miniBLOC chassis mount package. Physical dimensions, pin configuration, and mounting requirements are identical.

Q: What is the significance of the different Rds On measurement conditions?

A: The IXFE180N10 specifies Rds On at 90A, while the IXFN180N10 specifies it at 500mA. Both devices maintain the same maximum Rds On value of 8mOhm at 10V gate-source voltage. The measurement conditions reflect device characterization methodology and do not affect substitution compatibility.