IXFC80N10 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFC80N10 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 80A continuous drain current in the ISOPLUS220™ package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. The ISOPLUS220™ package configuration limits direct pin-compatible substitution options, requiring evaluation of alternative package formats that maintain electrical performance specifications.

Substiute Parts

IXFC80N10
IXYSIn Stock: 1069IXFC80N10 Datasheet
IXFC80N10
Current Part
IXTP80N10T
IXYSIn Stock: 1517IXTP80N10T Datasheet
IXTP80N10T
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 80 A (Tc)
On-State Resistance (Rds On Max) @ 10V Vgs 12.5 mOhm @ 40A
Gate Threshold Voltage (Vgs(th) Max) 4 V @ 4mA
Gate Charge (Qg Max) @ 10V 180 nC
Input Capacitance (Ciss Max) @ 25V 4800 pF
Power Dissipation (Max) 230 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type ISOPLUS220™ Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFC80N10 is determined by electrical parameter equivalence across the following criteria:

Electrical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 100V minimum
  • Continuous Drain Current (Id): 80A minimum at 25°C
  • Power Dissipation: 230W minimum at Tc
  • Gate Drive Voltage: 10V compatible operation
  • Operating Temperature Range: Support for -55°C to 150°C minimum

Package Consideration: The IXFC80N10 utilizes the ISOPLUS220™ package. Direct package-compatible substitutes are limited. The IXTP80N10T provides electrical equivalence in the TO-220-3 package, which requires mechanical redesign but maintains all critical electrical specifications.

Substitution Logic: The IXTP80N10T meets all electrical requirements for functional substitution. Both devices are manufactured by IXYS, operate at identical voltage and current ratings, and share the same power dissipation specification. Package transition from ISOPLUS220™ to TO-220-3 requires PCB layout modification but does not affect electrical performance within the specified operating parameters.

Parameter Comparison

Parameter IXFC80N10 IXTP80N10T Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 100 100 V
Continuous Drain Current (Id) @ 25°C 80 80 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ 10V Vgs 12.5 @ 40A 14 @ 25A mOhm
Vgs(th) (Max) 4 @ 4mA 5 @ 100µA V
Gate Charge (Qg Max) @ 10V 180 60 nC
Input Capacitance (Ciss Max) @ 25V 4800 3040 pF
Vgs (Max) ±20 ±20 V
Power Dissipation (Max) 230 230 W (Tc)
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case ISOPLUS220™ TO-220-3
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

IXTP80N10T as Primary Substitute:

The IXTP80N10T is the qualified substitute for the obsolete IXFC80N10. Selection is based on the following engineering criteria:

Electrical Equivalence: Both devices maintain identical voltage (100V Vdss) and current (80A Id) ratings with matching power dissipation (230W). The IXTP80N10T operates across an extended temperature range (-55°C to 175°C) compared to the IXFC80N10 (-55°C to 150°C), providing additional thermal margin.

Product Status: The IXTP80N10T carries Active product status, ensuring continued availability and manufacturing support. The IXFC80N10 is classified as Obsolete, making the IXTP80N10T the only viable long-term procurement option.

Compliance and Certifications: Both devices maintain identical REACH and ECCN classifications (REACH Unaffected, EAR99), ensuring regulatory compliance equivalence. The IXTP80N10T is RoHS3 Compliant, meeting current environmental standards.

Package Transition: The transition from ISOPLUS220™ to TO-220-3 requires PCB layout modification. The TO-220-3 package is a standard through-hole configuration with established thermal management practices. Pin assignment compatibility must be verified during design integration.

Performance Characteristics: The IXTP80N10T exhibits lower gate charge (60 nC vs. 180 nC) and input capacitance (3040 pF vs. 4800 pF), resulting in faster switching characteristics and reduced gate drive requirements. On-state resistance specifications differ slightly (14 mOhm @ 25A vs. 12.5 mOhm @ 40A), reflecting different measurement conditions but maintaining equivalent performance within the 80A continuous current rating.

Frequently Asked Questions (FAQ)

Q: Can the IXTP80N10T directly replace the IXFC80N10 without PCB modification?

A: No. The IXFC80N10 uses the ISOPLUS220™ package while the IXTP80N10T uses the TO-220-3 package. These packages have different pin configurations and thermal characteristics, requiring PCB layout redesign. Pin assignment and thermal management must be re-evaluated during integration.

Q: Are the electrical specifications identical between these two devices?

A: The devices share identical voltage (100V), current (80A), and power dissipation (230W) ratings. Minor differences exist in gate charge (180 nC vs. 60 nC) and input capacitance (4800 pF vs. 3040 pF), with the IXTP80N10T exhibiting lower values. These differences result in faster switching performance and reduced gate drive power consumption.

Q: Why is the IXFC80N10 classified as obsolete?

A: The IXFC80N10 is no longer in active production. The IXTP80N10T represents the current-generation equivalent from IXYS, offering improved performance characteristics and extended temperature range while maintaining electrical compatibility.

Q: What is the thermal performance difference between ISOPLUS220™ and TO-220-3 packages?

A: Both packages are through-hole configurations with 230W power dissipation ratings. Thermal performance depends on PCB copper area, heatsink attachment, and airflow conditions. The TO-220-3 package is widely supported with standard heatsink solutions. Thermal design calculations should be performed for the specific application.

Q: Are there any gate drive considerations when switching from IXFC80N10 to IXTP80N10T?

A: The IXTP80N10T has significantly lower gate charge (60 nC vs. 180 nC) and input capacitance (3040 pF vs. 4800 pF). Existing gate drive circuits will function with the IXTP80N10T, but the reduced capacitive loading may allow for faster switching speeds. Gate drive voltage remains compatible at ±20V maximum.

Q: What is the operating temperature range difference?

A: The IXFC80N10 operates from -55°C to 150°C (TJ), while the IXTP80N10T extends to -55°C to 175°C (TJ). The IXTP80N10T provides an additional 25°C of high-temperature margin, beneficial for applications with elevated ambient or self-heating conditions.

Q: Are both devices RoHS compliant?

A: The IXTP80N10T is RoHS3 Compliant. The IXFC80N10 compliance status is not specified in the provided data. Both devices maintain REACH Unaffected status and EAR99 ECCN classification.

Q: What inventory status should be considered for procurement?

A: The IXFC80N10 has 977 pieces in stock (obsolete status), while the IXTP80N10T has 1426 pieces in stock (active status). For new designs or long-term production, the IXTP80N10T is the recommended selection due to active product status and higher availability assurance.

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