IXFC80N085 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFC80N085 is an N-Channel MOSFET manufactured by IXYS, rated for 85V drain-to-source voltage and 80A continuous drain current at 25°C. This device is housed in the ISOPLUS220™ through-hole package and is designed for high-power switching applications requiring robust thermal performance up to 230W at the case temperature.

The IXFC80N085 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IXFC80N085
IXYSIn Stock: 1124IXFC80N085 Datasheet
IXFC80N085
Current Part
AOTF288L
Alpha & Omega Semiconductor Inc.In Stock: 3260AOTF288L Datasheet
AOTF288L
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 85 V
Continuous Drain Current (Id) @ 25°C 80 A (Tc)
On-State Resistance (Rds On Max) @ 40A, 10V 11 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 4mA 4 V
Gate Charge (Qg Max) @ 10V 180 nC
Power Dissipation (Max) 230 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type ISOPLUS220™ Through Hole
FET Technology MOSFET (Metal Oxide) N-Channel

Substitute Part Grouping Explanation

Substitution of the IXFC80N085 is constrained by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must be equal to or greater than 85V
  • Continuous Drain Current (Id) must support the application's current requirements
  • On-State Resistance (Rds On) must be compatible with thermal and efficiency constraints
  • Gate Threshold Voltage (Vgs(th)) must fall within acceptable switching characteristics
  • Gate Charge (Qg) affects switching speed and driver requirements
  • Operating temperature range must encompass the application environment

Mechanical Compatibility Criteria:

  • Package type must be through-hole compatible with existing PCB layouts
  • Pinout configuration must match or be adaptable to the circuit design

The AOTF288L is identified as a substitute part. However, this device exhibits significant deviations from the IXFC80N085 in current rating and package form factor, requiring careful evaluation against specific application requirements.

Parameter Comparison

Parameter IXFC80N085 AOTF288L Unit
Manufacturer IXYS Alpha & Omega Semiconductor Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 85 80 V
Continuous Drain Current (Id) @ 25°C 80 (Tc) 43 (Tc) A
On-State Resistance (Rds On Max) 11 @ 40A, 10V 9.2 @ 20A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) 4 @ 4mA 3.4 @ 250µA V
Gate Charge (Qg Max) @ 10V 180 38 nC
Maximum Gate Voltage (Vgs Max) ±20 ±20 V
Input Capacitance (Ciss Max) 4800 @ 25V 1871 @ 40V pF
Power Dissipation (Max) 230 (Tc) 35.5 (Tc) W
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case ISOPLUS220™ TO-220-3 Full Pack
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

Product Status Consideration: The IXFC80N085 is obsolete, while the AOTF288L is active and currently manufactured. Active product status ensures ongoing availability and supply chain support.

Compliance and Certifications: Both the IXFC80N085 and AOTF288L carry identical REACH and ECCN classifications (REACH Unaffected, EAR99), indicating equivalent regulatory standing. Both devices maintain MSL Level 1 (Unlimited) moisture sensitivity ratings, requiring no special handling precautions.

Critical Parameter Deviations: The AOTF288L exhibits the following deviations from the IXFC80N085:

  • Vdss is reduced from 85V to 80V, representing a 5.9% decrease in voltage rating
  • Continuous drain current (Tc) is reduced from 80A to 43A, representing a 46.3% decrease in current capacity
  • Power dissipation (Tc) is reduced from 230W to 35.5W, representing an 84.6% decrease in thermal capability
  • Package form factor differs: ISOPLUS220™ versus TO-220-3 Full Pack

These deviations indicate that the AOTF288L is suitable only for applications where the reduced current and power ratings are acceptable and where the TO-220 package footprint can be accommodated.

Selection Guidance: Selection of the AOTF288L as a substitute requires verification that the application's maximum continuous drain current does not exceed 43A and that thermal dissipation requirements do not exceed 35.5W at the case temperature. The reduced voltage rating of 80V versus 85V must be evaluated against the application's maximum operating voltage to ensure adequate safety margin.

Frequently Asked Questions (FAQ)

Q: Can the AOTF288L directly replace the IXFC80N085 in all applications?

A: No. The AOTF288L has significantly lower current and power ratings. Direct replacement is limited to applications where continuous drain current does not exceed 43A and power dissipation does not exceed 35.5W at case temperature. The reduced Vdss rating (80V versus 85V) must also be evaluated for the specific application voltage.

Q: What are the key electrical differences between these two devices?

A: The primary differences are continuous drain current (80A versus 43A), power dissipation capability (230W versus 35.5W), and Vdss rating (85V versus 80V). The AOTF288L has lower gate charge (38nC versus 180nC) and lower input capacitance (1871pF versus 4800pF), which may affect switching characteristics and driver requirements.

Q: Are the packages compatible?

A: No. The IXFC80N085 uses the ISOPLUS220™ package, while the AOTF288L uses the TO-220-3 Full Pack. These are different through-hole packages with different pinout configurations and PCB footprints. Physical modification or PCB redesign may be required for substitution.

Q: What is the operating temperature range difference?

A: The IXFC80N085 operates from -55°C to 150°C (TJ), while the AOTF288L operates from -55°C to 175°C (TJ). The AOTF288L has a 25°C higher maximum junction temperature rating, which may provide additional thermal margin in high-temperature environments.

Q: Are there regulatory or compliance concerns with substitution?

A: Both devices share identical REACH and ECCN classifications and carry the same MSL rating. No additional regulatory or compliance barriers exist for substitution from a certification standpoint.

Q: How does gate charge affect substitution?

A: The AOTF288L has significantly lower gate charge (38nC versus 180nC). This reduces the charge that the gate driver must supply during switching transitions, potentially allowing use of lower-power gate drivers. However, the driver circuit must be verified to function correctly with the lower gate charge specification.

Q: What should be evaluated before selecting the AOTF288L as a substitute?

A: Verify that the application's maximum continuous drain current does not exceed 43A, that power dissipation does not exceed 35.5W at case temperature, that the application voltage does not exceed 80V, and that the TO-220 package footprint can be accommodated in the PCB layout. Gate driver compatibility with the lower gate charge specification should also be confirmed.

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