IXFC80N08 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFC80N08 is an N-Channel MOSFET manufactured by IXYS, rated for 80V drain-to-source voltage with 80A continuous drain current at 25°C (Tc). This device features the ISOPLUS220™ package and is part of the HiPerFET™ series. The IXFC80N08 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across voltage ratings, current handling capacity, thermal characteristics, and gate drive requirements while accommodating package and mounting differences.

Substiute Parts

IXFC80N08

IXYSIn Stock: 2045IXFC80N08 Datasheet

Current PartRFQ

AOTF288L

Alpha & Omega Semiconductor Inc.In Stock: 3260AOTF288L Datasheet

SimilarRFQ

TK100E08N1,S1X

Toshiba Semiconductor and StorageIn Stock: 880TK100E08N1,S1X Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFC80N08 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 80V
• Continuous Drain Current (Id): Must support 80A or higher at rated temperature
• On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
• Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
• Gate Charge (Qg): Affects switching speed and drive circuit requirements
• Operating Temperature Range: Must encompass the original -55°C to 150°C specification

Mechanical Compatibility Requirements:

• Mounting Type: Through Hole (required for direct board-level replacement)
• Package Type: ISOPLUS220™ preferred; alternative packages (TO-220) acceptable with mechanical adaptation

The identified substitute parts maintain the 80V Vdss rating and N-Channel MOSFET technology. Variations in current rating, on-resistance, and package type reflect available alternatives in active production status.

Parameter Comparison

Engineering Selection Recommendations

TK100E08N1,S1X (Toshiba)

The TK100E08N1,S1X is an active-status N-Channel MOSFET rated for 80V and 100A continuous drain current. This device exceeds the IXFC80N08 current specification and delivers superior on-resistance performance (3.2 mOhm @ 50A, 10V versus 11 mOhm @ 40A, 10V). The TK100E08N1,S1X operates across the -55°C to 150°C temperature range, matching the original specification. Gate charge is lower (130 nC @ 10V), reducing drive circuit stress. The TO-220-3 package requires mechanical adaptation from the ISOPLUS220™ footprint but maintains through-hole mounting compatibility. RoHS3 compliance and EAR99 export classification align with regulatory requirements. This substitute is suitable for applications requiring equal or higher current capacity and improved thermal efficiency.

AOTF288L (Alpha & Omega Semiconductor Inc.)

The AOTF288L is an active-status N-Channel MOSFET rated for 80V with 43A continuous drain current at Tc. This device operates within the -55°C to 175°C temperature range, exceeding the original upper temperature limit by 25°C. On-resistance is 9.2 mOhm @ 20A, 10V, providing performance comparable to the IXFC80N08. Gate charge is significantly lower (38 nC @ 10V), enabling faster switching and reduced gate drive requirements. The TO-220-3 Full Pack configuration requires mechanical adaptation from ISOPLUS220™ but maintains through-hole mounting. RoHS3 compliance and EAR99 export classification are confirmed. This substitute is suitable for applications where current requirements do not exceed 43A and extended upper temperature operation is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the TK100E08N1,S1X directly replace the IXFC80N08 without circuit modification?

A: The TK100E08N1,S1X maintains the same 80V Vdss rating, gate threshold voltage (4V @ 1mA), and operating temperature range (-55°C to 150°C). However, the TO-220-3 package differs from the ISOPLUS220™ footprint, requiring mechanical board-level adaptation. Gate charge is lower (130 nC versus 180 nC), which may reduce gate drive circuit stress but does not prevent direct electrical substitution. Thermal management must account for the different package thermal characteristics.

Q: Is the AOTF288L suitable for applications requiring 80A continuous current?

A: The AOTF288L is rated for 43A continuous drain current at Tc, which is below the IXFC80N08 specification of 80A. This device is not suitable for applications requiring sustained 80A operation. The AOTF288L is appropriate for applications with maximum current requirements of 43A or lower.

Q: What are the package compatibility considerations?

A: The IXFC80N08 uses the ISOPLUS220™ through-hole package. Both substitute parts (TK100E08N1,S1X and AOTF288L) use the TO-220-3 through-hole package. While both are through-hole devices, the pin configurations and thermal pad dimensions differ. Mechanical board-level adaptation, including PCB footprint modification and potential heatsink interface changes, is required for either substitute.

Q: How do gate charge differences affect circuit design?

A: The IXFC80N08 has a gate charge of 180 nC @ 10V. The TK100E08N1,S1X has 130 nC, and the AOTF288L has 38 nC. Lower gate charge reduces the charge that must be supplied by the gate drive circuit, potentially allowing use of lower-current gate drivers or faster switching speeds. Existing gate drive circuits designed for 180 nC will operate with lower gate charge devices without modification, though switching performance may improve.

Q: Are there compliance or regulatory differences between the main part and substitutes?

A: All three devices share identical ECCN (EAR99), HTSUS (8541.29.0095), and Moisture Sensitivity Level (MSL 1 - Unlimited) classifications. The TK100E08N1,S1X and AOTF288L are both RoHS3 compliant and REACH unaffected, matching the regulatory status of the obsolete IXFC80N08. No additional compliance considerations apply to substitution.

Q: What thermal performance differences exist between these devices?

A: The IXFC80N08 dissipates 230W (Tc) maximum. The TK100E08N1,S1X dissipates 255W (Tc), providing superior thermal capacity. The AOTF288L dissipates 35.5W (Tc), significantly lower due to its reduced current rating. Package thermal resistance differs between ISOPLUS220™ and TO-220-3, affecting junction-to-ambient thermal performance. Heatsink design and thermal interface materials must be re-evaluated for either substitute.