IXFC60N20 N-Channel MOSFET 200V 60A Equivalent & Substitute Parts

Part Overview

The IXFC60N20 is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage and 60A continuous drain current. This device is packaged in the ISOPLUS220™ through-hole format and is part of the HiPerFET™ series. The IXFC60N20 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating different package formats.

Substiute Parts

IXFC60N20

IXYSIn Stock: 768IXFC60N20 Datasheet

Current PartRFQ

IXTP60N20T

IXYSIn Stock: 6007IXTP60N20T Datasheet

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IRFI4227PBF

Infineon TechnologiesIn Stock: 1635IRFI4227PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFC60N20 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must equal or exceed 60A at 25°C
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Gate Voltage Range (Vgs): Must accommodate ±20V maximum specification
• Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Factors:

• Mounting Type: Through Hole (required for direct mechanical replacement)
• Package Format: ISOPLUS220™ preferred; alternative through-hole packages (TO-220-3) acceptable with mechanical adaptation
• Rds On characteristics: Lower or equivalent on-resistance values are acceptable
• Gate Charge and Input Capacitance: Variations acceptable within application-dependent switching requirements

The IXTP60N20T qualifies as a direct electrical equivalent with superior thermal performance (500W vs. 230W) and active product status. The IRFI4227PBF provides electrical compatibility at reduced current capacity (26A vs. 60A) and is suitable only for applications not requiring the full 60A rating.

Parameter Comparison

Engineering Selection Recommendations

IXTP60N20T (IXYS Trench Series)

The IXTP60N20T is the primary substitute for the obsolete IXFC60N20. This device maintains identical electrical specifications for voltage rating (200V) and current capacity (60A), ensuring direct functional equivalence. The IXTP60N20T offers superior thermal performance with 500W maximum power dissipation compared to 230W in the original part, and an extended operating temperature range to 175°C. The device is classified as Active product status with ROHS3 compliance, supporting long-term design continuity. Package format differs (TO-220-3 versus ISOPLUS220™), requiring mechanical board layout adaptation. Gate charge is reduced (73 nC versus 155 nC), resulting in faster switching characteristics. This part is recommended for new designs and production replacement of the IXFC60N20.

IRFI4227PBF (Infineon HEXFET® Series)

The IRFI4227PBF is an alternative substitute suitable only for applications where the full 60A current capacity is not required. This device maintains the 200V voltage rating and N-Channel MOSFET technology but is rated for 26A continuous drain current. The IRFI4227PBF features superior on-resistance (25 mOhm at 17A versus 33 mOhm at 30A) and is ROHS3 compliant with Active product status. The reduced power dissipation rating (46W) and lower operating temperature minimum (-40°C versus -55°C) indicate this part is suitable for lower-power applications only. Package format is TO-220-3 Full-Pak. This part is not recommended as a direct replacement for the IXFC60N20 in applications requiring 60A operation.

Frequently Asked Questions (FAQ)

Q: Can the IXTP60N20T directly replace the IXFC60N20 without circuit modification?

A: The IXTP60N20T provides electrical equivalence across all critical parameters (200V, 60A, N-Channel MOSFET). However, the package format differs (TO-220-3 versus ISOPLUS220™), requiring mechanical board layout changes. Gate charge reduction (73 nC versus 155 nC) may improve switching performance but does not require circuit modification. Thermal design may be enhanced due to higher power dissipation rating (500W versus 230W).

Q: Is the IRFI4227PBF suitable as a replacement for the IXFC60N20?

A: The IRFI4227PBF is not suitable as a direct replacement. While it maintains the 200V voltage rating and N-Channel MOSFET technology, the continuous drain current rating is 26A, significantly below the 60A requirement of the IXFC60N20. This part is acceptable only for applications where current demand does not exceed 26A.

Q: What are the key differences between ISOPLUS220™ and TO-220-3 packages?

A: Both packages are through-hole formats with different mechanical footprints and thermal characteristics. ISOPLUS220™ is a proprietary IXYS package, while TO-220-3 is an industry-standard format. Substitution requires PCB layout modification to accommodate the different pin configuration and mounting hole spacing. Thermal performance may differ based on package design and heatsink interface.

Q: Does the IXTP60N20T have better thermal performance than the IXFC60N20?

A: Yes. The IXTP60N20T is rated for 500W maximum power dissipation compared to 230W for the IXFC60N20, representing a 117% increase in thermal capacity. The extended operating temperature range (-55°C to 175°C versus -55°C to 150°C) provides additional thermal margin. These improvements result from the Trench technology used in the IXTP60N20T.

Q: Are there compliance differences between the substitute parts?

A: The IXTP60N20T and IRFI4227PBF are both ROHS3 compliant with REACH Unaffected status. The IXFC60N20 does not specify RoHS compliance. All three parts carry EAR99 ECCN classification and identical HTSUS codes (8541.29.0095), indicating equivalent regulatory treatment for export and trade purposes.

Q: What is the impact of reduced gate charge in the IXTP60N20T?

A: Gate charge reduction from 155 nC to 73 nC in the IXTP60N20T results in faster gate charging and discharging cycles, enabling higher switching frequencies with equivalent gate drive circuitry. This characteristic improves switching efficiency and reduces switching losses in power conversion applications. No circuit modification is required; the benefit is automatic upon substitution.

Q: Can both substitute parts be used interchangeably in the same application?

A: No. The IXTP60N20T and IRFI4227PBF have different current ratings (60A versus 26A) and are suitable for different application classes. Selection must be based on the specific current requirement of the circuit. The IXTP60N20T is the appropriate choice for applications requiring the full 60A capacity of the original IXFC60N20.