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IXFC52N30P Equivalent & Substitute Parts
Part Overview
The IXFC52N30P is an N-Channel MOSFET rated for 300V drain-to-source voltage with 24A continuous drain current at 25°C. This device is packaged in the ISOPLUS220™ through-hole format and is designed for high-voltage switching applications requiring moderate current handling. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 300 | V |
| Continuous Drain Current (Id) @ 25°C | 24 | A (Tc) |
| On-State Resistance (Rds On Max) @ Id, Vgs | 75 | mOhm @ 26A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 5 | V @ 4mA |
| Power Dissipation (Max) | 100 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | ISOPLUS220™ | Through Hole |
Substitute Part Grouping Explanation
Substitution of the IXFC52N30P is based on the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain-to-source voltage rating must equal or exceed 300V
- Continuous drain current must meet or exceed 24A at 25°C
- Gate threshold voltage must be compatible with existing drive circuitry
- Operating temperature range must encompass -55°C to 150°C
Mechanical Compatibility Criteria:
- Through-hole mounting type required
- Package footprint must be compatible with existing PCB layouts
The IXTP36N30P qualifies as a substitute based on matching voltage rating (300V), exceeding current rating (36A vs. 24A), maintaining compatible gate threshold voltage, and providing equivalent operating temperature range. Both devices are N-Channel MOSFETs within the IXYS PolarHT™ family.
Parameter Comparison
| Parameter | IXFC52N30P | IXTP36N30P | Unit |
|---|---|---|---|
| Manufacturer | IXYS | IXYS | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 300 | 300 | V |
| Continuous Drain Current (Id) @ 25°C | 24 | 36 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | 10 | V |
| Rds On (Max) @ Id, Vgs | 75 @ 26A, 10V | 110 @ 18A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 5 @ 4mA | 5.5 @ 250µA | V |
| Gate Charge (Qg Max) @ Vgs | 110 @ 10V | 70 @ 10V | nC |
| Input Capacitance (Ciss Max) @ Vds | 3490 @ 25V | 2250 @ 25V | pF |
| Power Dissipation (Max) | 100 | 300 | W (Tc) |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | ISOPLUS220™ | TO-220-3 | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
Engineering Selection Recommendations
IXTP36N30P as Primary Substitute:
The IXTP36N30P is an active product with equivalent voltage rating and superior current handling capability. This device provides 36A continuous drain current compared to the 24A rating of the IXFC52N30P, offering design margin for current-limited applications. The IXTP36N30P delivers three times the maximum power dissipation (300W vs. 100W), enabling thermal performance improvements in high-frequency switching circuits.
Product Status Consideration:
The IXFC52N30P is classified as obsolete. The IXTP36N30P maintains active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment for new designs and production continuity.
Package Transition:
The primary mechanical difference is the package format: IXFC52N30P uses ISOPLUS220™ while IXTP36N30P uses TO-220-3. Both are through-hole packages with different footprints. PCB layout modification is required for package transition.
Electrical Performance:
Both devices operate within the same temperature range (-55°C to 150°C) and share identical voltage ratings. The IXTP36N30P exhibits lower gate charge (70 nC vs. 110 nC) and reduced input capacitance (2250 pF vs. 3490 pF), resulting in faster switching characteristics and reduced gate drive power requirements.
Frequently Asked Questions (FAQ)
Q: Can the IXTP36N30P directly replace the IXFC52N30P without circuit modification?
A: Electrical substitution is valid based on voltage rating, current capability, and gate threshold voltage compatibility. However, package footprint differs between ISOPLUS220™ and TO-220-3, requiring PCB layout changes. Gate drive circuitry may benefit from the lower gate charge of the IXTP36N30P but does not require modification.
Q: What are the key electrical differences between these devices?
A: The IXTP36N30P provides higher continuous drain current (36A vs. 24A) and power dissipation capability (300W vs. 100W). On-state resistance differs at different measurement points: IXFC52N30P is rated at 75 mOhm @ 26A, 10V while IXTP36N30P is rated at 110 mOhm @ 18A, 10V. Gate charge and input capacitance are lower in the IXTP36N30P.
Q: Are there thermal management differences between the packages?
A: ISOPLUS220™ and TO-220-3 packages have different thermal characteristics. The IXTP36N30P's higher power dissipation rating (300W) and different package geometry may require thermal interface evaluation for specific mounting configurations.
Q: What compliance certifications apply to both devices?
A: Both devices are REACH Unaffected and classified under ECCN EAR99. The IXTP36N30P additionally carries ROHS3 compliance. Both maintain MSL 1 (Unlimited) moisture sensitivity rating.
Q: Is the IXTP36N30P suitable for applications requiring the exact 24A current specification?
A: Yes. The IXTP36N30P's 36A rating exceeds the 24A requirement, providing design margin. Applications limited to 24A operation remain within the device's safe operating area.
Q: What is the impact of lower gate charge on circuit design?
A: The IXTP36N30P's lower gate charge (70 nC vs. 110 nC) reduces gate drive power consumption and enables faster switching transitions. Existing gate drive circuits designed for the IXFC52N30P operate within acceptable parameters with the IXTP36N30P.
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