IXFC36N50P Equivalent & Substitute Parts

Part Overview

The IXFC36N50P is an N-Channel 500V 19A MOSFET manufactured by IXYS in the ISOPLUS220™ package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement. The part operates across a temperature range of -55°C to 150°C and delivers 156W maximum power dissipation at the case temperature. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package and mounting differences.

Substiute Parts

IXFC36N50P

IXYSIn Stock: 945IXFC36N50P Datasheet

Current PartRFQ

APT20F50B

Microsemi CorporationIn Stock: 899APT20F50B Datasheet

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STP20NM50FD

STMicroelectronicsIn Stock: 1687STP20NM50FD Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFC36N50P is determined by the following critical electrical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 500V to ensure safe operation in the same circuit topology.

Current Capability: The continuous drain current must equal or exceed 19A at 25°C. Substitute parts rated at 20A satisfy this requirement with margin.

On-State Resistance (Rds On): The maximum on-state resistance determines conduction losses. The IXFC36N50P specifies 190mOhm at 18A and 10V gate voltage. Substitute parts with lower Rds On values (250mOhm to 300mOhm at comparable test conditions) provide acceptable thermal performance.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements. The IXFC36N50P specifies 93nC at 10V. Substitute parts with lower gate charge (53nC to 75nC) reduce driver stress.

Input Capacitance (Ciss): Input capacitance influences gate drive circuit design. The IXFC36N50P specifies 5500pF at 25V. Substitute parts with lower input capacitance (1380pF to 2950pF) improve switching performance.

Power Dissipation: The IXFC36N50P dissipates 156W maximum. Substitute parts rated at 192W or higher accommodate thermal requirements.

Package Compatibility: The ISOPLUS220™ package is specific to IXYS. Substitute parts in TO-247 and TO-220 packages require mechanical redesign of the PCB layout and heatsink interface.

Parameter Comparison

Engineering Selection Recommendations

APT20F50B (Microsemi Corporation): This part is active and ROHS3 compliant. It meets the 500V voltage rating and exceeds the 19A current requirement at 20A. The higher power dissipation rating (290W) provides thermal margin. The TO-247-3 package requires PCB layout modification and different heatsink mounting compared to the ISOPLUS220™. Gate charge is lower (75nC), reducing driver requirements. This part is suitable for applications where package transition is acceptable.

STP20NM50FD (STMicroelectronics): This part is active and ROHS3 compliant. It meets the 500V voltage rating and exceeds the 19A current requirement at 20A. The power dissipation rating (192W) is adequate for the application. The TO-220-3 package is widely available and simplifies procurement. Gate charge (53nC) and input capacitance (1380pF) are significantly lower than the main part, improving switching characteristics. The extended operating temperature range (-65 to 150°C) provides additional margin. This part is suitable for direct electrical substitution with package redesign.

Both substitute parts are currently in active production status, ensuring long-term availability and supply chain stability compared to the obsolete IXFC36N50P.

Frequently Asked Questions (FAQ)

Q: Can the APT20F50B or STP20NM50FD be used as direct pin-for-pin replacements for the IXFC36N50P?

A: No. The IXFC36N50P uses the ISOPLUS220™ package, while the APT20F50B uses TO-247-3 and the STP20NM50FD uses TO-220-3. Pin configurations and mounting interfaces differ. PCB layout and heatsink redesign are required.

Q: What are the electrical advantages of the STP20NM50FD over the IXFC36N50P?

A: The STP20NM50FD has lower gate charge (53nC versus 93nC), lower input capacitance (1380pF versus 5500pF), and lower on-state resistance (250mOhm versus 190mOhm at comparable test conditions). These characteristics reduce gate drive power and improve switching speed.

Q: Are both substitute parts suitable for high-temperature applications?

A: Both parts operate to 150°C junction temperature, matching the IXFC36N50P. The STP20NM50FD extends the lower operating limit to -65°C, compared to -55°C for the IXFC36N50P and APT20F50B.

Q: Which substitute part has better thermal performance?

A: The APT20F50B has the highest power dissipation rating (290W), followed by the STP20NM50FD (192W). However, thermal performance depends on heatsink design and mounting interface. The ISOPLUS220™ package of the original part may have different thermal characteristics than the TO-247 or TO-220 packages.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the APT20F50B and STP20NM50FD are ROHS3 compliant. The IXFC36N50P RoHS status is not specified in the provided data.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge reduces the energy required to switch the transistor on and off, decreasing gate driver power dissipation and allowing use of lower-current gate drivers. This simplifies the gate drive circuit design.

Q: Can I use either substitute part in a 500V application without circuit modification?

A: Both substitute parts are rated for 500V Vdss and are electrically compatible with 500V circuit topologies. However, package differences require mechanical redesign of the PCB layout and heatsink interface.