IXFC26N50P Equivalent & Substitute Parts

Part Overview

The IXFC26N50P is an N-Channel 500V 15A MOSFET manufactured by IXYS in the ISOPLUS220™ package. This device is rated for 130W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFC26N50P

IXYSIn Stock: 927IXFC26N50P Datasheet

Current PartRFQ

IXTP15N50L2

IXYSIn Stock: 1126IXTP15N50L2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFC26N50P is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id): Must equal or exceed 15A at 25°C
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole
• Package compatibility with circuit board layout and thermal management requirements

The IXTP15N50L2 qualifies as a substitute based on matching all electrical parameters (500V Vdss, 15A Id, N-Channel MOSFET, -55°C to 150°C operating range) and maintaining through-hole mounting compatibility. However, the package differs from ISOPLUS220™ to TO-220-3, requiring physical layout verification.

Parameter Comparison

Engineering Selection Recommendations

IXTP15N50L2 as Primary Substitute:

The IXTP15N50L2 is an active product from IXYS that satisfies all core electrical requirements for substitution: matching 500V Vdss, 15A continuous drain current, N-Channel MOSFET topology, and -55°C to 150°C operating temperature range. The device is RoHS3 compliant and maintains REACH unaffected status, consistent with the original part's regulatory standing.

Key Differences Requiring Evaluation:

1. Package Change: The transition from ISOPLUS220™ to TO-220-3 requires physical layout verification. Pin configuration and thermal interface characteristics differ between packages.

2. On-State Resistance: The IXTP15N50L2 exhibits higher Rds On (480 mOhm @ 7.5A, 10V) compared to the IXFC26N50P (260 mOhm @ 13A, 10V). This difference affects power dissipation and thermal performance in the application circuit.

3. Power Dissipation Rating: The IXTP15N50L2 provides 300W maximum power dissipation versus 130W for the original part, offering improved thermal headroom.

4. Gate Charge and Input Capacitance: The IXTP15N50L2 exhibits higher gate charge (123 nC) and input capacitance (4080 pF) than the IXFC26N50P (65 nC and 3600 pF respectively), affecting gate drive circuit requirements.

5. Product Status: The IXTP15N50L2 is active and in production, ensuring long-term availability and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXTP15N50L2 directly replace the IXFC26N50P in existing circuit boards?

A: Electrical substitution is valid based on matching voltage, current, and temperature specifications. However, physical replacement requires package compatibility assessment. The ISOPLUS220™ and TO-220-3 packages have different pin layouts and thermal characteristics. PCB layout modification may be necessary.

Q: What is the impact of higher Rds On in the IXTP15N50L2?

A: Higher on-state resistance increases conduction losses in the circuit. At equivalent current levels, the IXTP15N50L2 will dissipate more power than the IXFC26N50P. Circuit thermal analysis must confirm that the application's heat dissipation capability accommodates this difference.

Q: Are there compliance differences between the two parts?

A: Both parts are REACH unaffected and carry EAR99 ECCN classification. The IXTP15N50L2 is RoHS3 compliant. Regulatory compliance is equivalent for both devices.

Q: Why is the IXFC26N50P obsolete?

A: The IXFC26N50P is classified as obsolete by IXYS. The IXTP15N50L2 represents the active product line continuation for this voltage and current class, ensuring ongoing design support and component availability.

Q: How do gate charge differences affect circuit design?

A: The IXTP15N50L2 requires higher gate charge (123 nC versus 65 nC) for switching. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Existing gate drive designs may require adjustment to accommodate the higher charge requirement.

Q: What thermal considerations apply to package substitution?

A: The TO-220-3 package (IXTP15N50L2) and ISOPLUS220™ package (IXFC26N50P) have different thermal resistance characteristics and mounting interfaces. Thermal interface material, heatsink compatibility, and board layout must be re-evaluated for the substitute part.