IXFC26N50 Equivalent & Substitute Parts

Part Overview

The IXFC26N50 is an N-Channel 500V 23A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in the ISOPLUS220™ package for through-hole mounting applications. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, and on-resistance characteristics while accommodating package and thermal performance variations.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	23	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	200 mOhm @ 13A, 10V	—
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 4mA
Gate Charge (Qg Max) @ Vgs	135	nC @ 10V
Power Dissipation (Max)	230	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	ISOPLUS220™	—

Substitute Part Grouping Explanation

Substitution of the IXFC26N50 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain-Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id): 23A or greater at 25°C
On-Resistance (Rds On): 200 mOhm or lower at rated conditions
Gate Threshold Voltage (Vgs(th)): 4V or lower
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole
Technology: N-Channel MOSFET (Metal Oxide)

Package Considerations: The IXFC26N50 uses the ISOPLUS220™ package. Substitute parts may employ alternative through-hole packages (TO-220-3, TO-220FP) provided electrical parameters remain within specified tolerances. Package differences do not preclude substitution when electrical characteristics align.

Identified Substitutes:

IXTP460P2 (IXYS, PolarP2™ series, TO-220-3 package)
STF28NM50N (STMicroelectronics, MDmesh™ II series, TO-220FP package)
STF23NM50N (STMicroelectronics, MDmesh™ II series, TO-220FP package)

Parameter Comparison

Parameter	IXFC26N50	IXTP460P2	STF28NM50N	STF23NM50N	Unit
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	500	500	500	500	V
Id @ 25°C	23	24	21	17	A (Tc)
Rds On (Max) @ Id, Vgs	200 @ 13A, 10V	270 @ 12A, 10V	158 @ 10.5A, 10V	190 @ 8.5A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 4mA	4.5 @ 250µA	4 @ 250µA	4 @ 250µA	V
Qg (Max) @ Vgs	135 @ 10V	48 @ 10V	50 @ 10V	45 @ 10V	nC
Ciss (Max) @ Vds	4200 @ 25V	2890 @ 25V	1735 @ 25V	1330 @ 50V	pF
Power Dissipation (Max)	230	480	35	30	W (Tc)
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	—
Package	ISOPLUS220™	TO-220-3	TO-220FP	TO-220FP	—
Vgs (Max)	±20	±30	±25	±25	V

Engineering Selection Recommendations

IXTP460P2 (IXYS PolarP2™ Series)

The IXTP460P2 provides the highest continuous drain current (24A) and power dissipation capability (480W) among available substitutes. This device exceeds the IXFC26N50 electrical requirements across all critical parameters. The IXTP460P2 is classified as Last Time Buy, indicating limited future availability. RoHS3 compliance and REACH Unaffected status align with regulatory requirements. The TO-220-3 package requires PCB layout modification from the original ISOPLUS220™ design.

STF28NM50N (STMicroelectronics MDmesh™ II Series)

The STF28NM50N delivers 21A continuous drain current with superior on-resistance performance (158 mOhm at 10.5A, 10V). This device meets or exceeds the IXFC26N50 electrical specifications with the exception of power dissipation (35W versus 230W), which reflects package thermal characteristics rather than device limitation. The STF28NM50N is classified as Active, ensuring long-term availability and supply continuity. RoHS3 compliance and REACH Unaffected status are confirmed. The TO-220FP package accommodates through-hole mounting with standard PCB footprints.

STF23NM50N (STMicroelectronics MDmesh™ II Series)

The STF23NM50N provides 17A continuous drain current with on-resistance of 190 mOhm at 8.5A, 10V. This device meets the IXFC26N50 voltage and temperature specifications but delivers reduced current capacity. The STF23NM50N is classified as Active with confirmed long-term availability. RoHS3 compliance and REACH Unaffected status are established. The TO-220FP package supports standard through-hole mounting.

Selection Basis:

For applications requiring maximum current capacity and thermal performance, IXTP460P2 is appropriate despite Last Time Buy status. For applications prioritizing long-term supply assurance and active product status, STF28NM50N is recommended. STF23NM50N serves applications with reduced current requirements below 21A.

Frequently Asked Questions (FAQ)

Q: Can the IXTP460P2 directly replace the IXFC26N50 without circuit modification?

A: The IXTP460P2 is electrically compatible with the IXFC26N50 across all critical parameters (Vdss, Id, Rds On, Vgs(th), operating temperature). However, the package differs (TO-220-3 versus ISOPLUS220™), requiring PCB footprint redesign. Gate drive circuitry may require adjustment due to reduced gate charge (48 nC versus 135 nC).

Q: What is the significance of the power dissipation difference between IXFC26N50 (230W) and STF28NM50N (35W)?

A: Power dissipation ratings reflect thermal package characteristics and junction-to-case thermal resistance, not device performance limitations. The STF28NM50N's lower rating results from the TO-220FP package thermal design. Actual power dissipation in circuit operation depends on application current, duty cycle, and thermal management implementation.

Q: Are all substitute parts RoHS3 compliant?

A: IXTP460P2, STF28NM50N, and STF23NM50N are all RoHS3 compliant. The original IXFC26N50 RoHS status is not specified in available documentation.

Q: Which substitute part offers the best on-resistance performance?

A: STF28NM50N provides the lowest on-resistance at rated conditions (158 mOhm @ 10.5A, 10V), followed by STF23NM50N (190 mOhm @ 8.5A, 10V) and IXTP460P2 (270 mOhm @ 12A, 10V).

Q: Can STF23NM50N be used in applications designed for 23A continuous current?

A: STF23NM50N is rated for 17A continuous drain current, which is below the IXFC26N50 specification of 23A. This device is suitable only for applications with maximum sustained current requirements of 17A or lower.

Q: What is the impact of gate charge differences on circuit design?

A: The IXFC26N50 requires 135 nC gate charge at 10V, while substitutes require 45–50 nC. Lower gate charge reduces gate drive power requirements and switching losses. Gate drive circuits designed for the IXFC26N50 will operate with faster switching transitions when driving substitute devices, potentially requiring damping or slew-rate limiting to prevent EMI issues.

Q: Are all substitute parts available in tube packaging?

A: IXTP460P2, STF28NM50N, and STF23NM50N are all supplied in tube packaging, consistent with the IXFC26N50 original packaging format.

Q: What is the difference between TO-220-3 and TO-220FP packages?

A: Both are through-hole packages with identical electrical pin configurations. TO-220FP (Full Pack) includes a plastic insulating frame for improved mechanical stability and thermal management. PCB footprints are compatible with standard TO-220 land patterns.

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