IXFC24N50 Equivalent & Substitute Parts

Part Overview

The IXFC24N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 21A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in the ISOPLUS220™ package and is designed for high-voltage switching applications requiring through-hole mounting. The part is classified as obsolete, necessitating identification of active equivalent devices to maintain design continuity and ensure long-term component availability for new production and field replacements.

Substiute Parts

IXFC24N50

IXYSIn Stock: 1158IXFC24N50 Datasheet

Current PartRFQ

FDP22N50N

onsemiIn Stock: 2177FDP22N50N Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFC24N50 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 500V minimum
• Current - Continuous Drain (Id) @ 25°C: 21A minimum
• Mounting Type: Through Hole
• Operating Temperature Range: -55°C to 150°C minimum
• Technology: N-Channel MOSFET (Metal Oxide)

Acceptable Variation Parameters:

• Rds On (Max): Equal to or lower than 230 mOhm
• Power Dissipation (Max): Equal to or higher than 230W
• Gate Charge (Qg): Lower values acceptable
• Input Capacitance (Ciss): Lower values acceptable
• Package / Case: Alternative through-hole packages acceptable if electrical performance meets or exceeds specifications

The FDP22N50N qualifies as a substitute based on matching or exceeding all critical parameters while maintaining through-hole mounting compatibility and active product status.

Parameter Comparison

Engineering Selection Recommendations

The FDP22N50N is a qualified substitute for the obsolete IXFC24N50 based on the following engineering criteria:

Electrical Performance: The FDP22N50N meets or exceeds all critical electrical specifications. It provides 22A continuous drain current compared to 21A, matching the 500V Vdss rating. The on-resistance of 220 mOhm is lower than the 230 mOhm specification, resulting in reduced power dissipation and improved thermal performance. Maximum power dissipation is 312.5W versus 230W, providing additional thermal margin.

Compliance and Availability: The FDP22N50N holds active product status from onsemi, ensuring long-term availability and supply chain continuity. Both devices maintain REACH Unaffected and EAR99 ECCN classifications, preserving regulatory compliance across applications.

Package Consideration: The substitute uses TO-220-3 through-hole packaging instead of ISOPLUS220™. Both packages are through-hole mount types suitable for PCB assembly. Physical footprint differences require PCB layout verification prior to implementation.

Thermal and Gate Characteristics: The FDP22N50N exhibits lower gate charge (65 nC versus 135 nC) and lower input capacitance (3200 pF versus 4200 pF), enabling faster switching performance and reduced driver power requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDP22N50N directly replace the IXFC24N50 without PCB modifications?

A: The FDP22N50N is electrically compatible and meets all performance requirements. However, the package change from ISOPLUS220™ to TO-220-3 requires PCB footprint verification. Both are through-hole packages, but physical dimensions and pin spacing differ. PCB layout review is necessary before implementation.

Q: What are the key electrical advantages of the FDP22N50N substitute?

A: The FDP22N50N provides 1A higher continuous drain current (22A versus 21A), lower on-resistance (220 mOhm versus 230 mOhm), and significantly higher power dissipation capability (312.5W versus 230W). Gate charge is reduced by 51% and input capacitance by 24%, enabling improved switching speed and reduced gate driver stress.

Q: Why is the IXFC24N50 classified as obsolete?

A: The IXFC24N50 is listed as obsolete by the manufacturer. The FDP22N50N from onsemi is an active product with equivalent or superior electrical performance, making it the appropriate selection for new designs and ongoing production requirements.

Q: Are there compliance differences between the two devices?

A: Both devices maintain identical REACH and ECCN classifications (REACH Unaffected, EAR99). The FDP22N50N carries RoHS3 compliance certification, whereas the IXFC24N50 does not specify RoHS status. This represents an additional compliance advantage for the substitute in regulated applications.

Q: What is the impact of lower gate charge on circuit design?

A: The FDP22N50N gate charge of 65 nC versus 135 nC reduces the charge that must be supplied by the gate driver circuit. This results in lower gate driver power dissipation, faster switching transitions, and reduced electromagnetic interference. Existing gate driver circuits designed for the IXFC24N50 will operate with improved performance margins.

Q: How do the package differences affect thermal management?

A: Both ISOPLUS220™ and TO-220-3 are through-hole packages with similar thermal characteristics. The FDP22N50N's higher power dissipation rating (312.5W versus 230W) provides additional thermal headroom. Heatsink requirements should be evaluated based on actual application power levels and ambient conditions.