IXFC20N80P N-Channel 800V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFC20N80P is an N-Channel 800V 11A MOSFET manufactured by IXYS in the HiPerFET™ and PolarHT™ series. This device features a through-hole ISOPLUS220™ package rated for 166W power dissipation at case temperature. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support.

Substitute parts are selected based on matching or exceeding the critical electrical parameters: drain-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), gate charge (Qg), and operating temperature range. Package compatibility and product status are secondary considerations dependent on application requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	11	A (Tc)
On-State Resistance (Rds On) @ 10A, 10V	500	mOhm
Gate Charge (Qg) @ 10V	85	nC
Gate Threshold Voltage (Vgs(th)) @ 4mA	5	V
Input Capacitance (Ciss) @ 25V	4680	pF
Power Dissipation (Max)	166	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	ISOPLUS220™	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria applied in order of priority:

Primary Electrical Criteria:

Drain-Source Voltage (Vdss) must equal or exceed 800V
Continuous Drain Current (Id) must equal or exceed 11A
On-State Resistance (Rds On) must not exceed 500mOhm at rated conditions
Gate Charge (Qg) must not exceed 85nC at 10V
Operating Temperature Range must encompass -55°C to 150°C

Secondary Criteria:

Gate Threshold Voltage (Vgs(th)) compatibility with 5V nominal
Maximum Gate Voltage (Vgs Max) must accommodate ±30V or greater
Moisture Sensitivity Level (MSL) of 1 (Unlimited)
REACH and RoHS compliance status

Package Considerations:

Through-hole mounting type required
Package variants (TO-220, TO-247, ISOPLUS220) are interchangeable at the circuit level with appropriate PCB layout modifications

The following parts meet substitution criteria based on these parameters.

Parameter Comparison

Parameter	IXFC20N80P	STP13N80K5	STF13N80K5	SPA11N80C3XKSA1	APT11F80B	R8010ANX
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	Infineon Technologies	Microchip Technology	Rohm Semiconductor
Vdss (V)	800	800	800	800	800	800
Id @ 25°C (A)	11	12	12	11	12	10
Rds On (mOhm)	500 @ 10A	450 @ 6A	450 @ 6A	450 @ 7.1A	900 @ 6A	560 @ 5A
Qg @ 10V (nC)	85	29	29	85	80	62
Vgs(th) @ Id (V)	5 @ 4mA	5 @ 100µA	5 @ 100µA	3.9 @ 680µA	5 @ 1mA	5 @ 1mA
Ciss @ 25V (pF)	4680	870	870	1600	2471	1750
Power Dissipation (W)	166	190	35	34	337	40
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	ISOPLUS220™	TO-220	TO-220FP	TO-220-3 Full Pack	TO-247 [B]	TO-220FM
Product Status	Obsolete	Active	Active	Not For New Designs	Active	Active
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Product Status):

STP13N80K5 (STMicroelectronics) – Preferred for direct replacement in existing designs. Exceeds drain current specification (12A vs. 11A), maintains equivalent on-state resistance (450mOhm), and provides superior power dissipation capability (190W vs. 166W). ROHS3 compliant. TO-220 package requires PCB layout adaptation from ISOPLUS220™.

STF13N80K5 (STMicroelectronics) – Functionally equivalent with identical electrical performance to STP13N80K5. TO-220FP package variant. ROHS3 compliant. Lower power dissipation rating (35W) suitable for lower thermal load applications.

APT11F80B (Microchip Technology) – Meets all primary electrical criteria with 12A continuous drain current and 80nC gate charge. TO-247 package provides enhanced thermal performance (337W dissipation). Higher on-state resistance (900mOhm) requires thermal management verification in high-current applications.

R8010ANX (Rohm Semiconductor) – Meets minimum electrical requirements with 10A continuous drain current and 560mOhm on-state resistance. TO-220FM package. ROHS3 compliant. Suitable for applications with reduced current demands or lower thermal requirements.

Secondary Substitute (Not For New Designs):

SPA11N80C3XKSA1 (Infineon Technologies) – Matches original drain current specification (11A) and gate charge (85nC). CoolMOS™ series technology. Product status "Not For New Designs" restricts use to legacy system support only. ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can the IXFC20N80P be directly replaced with STP13N80K5 without circuit modifications?

A: Electrical substitution is direct. The STP13N80K5 meets or exceeds all primary electrical parameters. Package substitution from ISOPLUS220™ to TO-220 requires PCB layout modifications for mounting hole positioning and thermal pad connection. Gate drive circuitry requires no changes.

Q: What is the significance of the lower gate charge (Qg) in STF13N80K5 and STP13N80K5 compared to the original part?

A: Gate charge of 29nC versus 85nC indicates faster switching characteristics and reduced gate drive power requirements. This is a performance improvement that does not affect substitution compatibility. Gate drive voltage remains 10V nominal.

Q: Is the APT11F80B suitable for applications requiring the full 11A continuous current specification?

A: The APT11F80B is rated for 12A continuous drain current, exceeding the 11A requirement. However, the on-state resistance is 900mOhm compared to the original 500mOhm. At 11A continuous current, power dissipation will be higher. Thermal analysis is required to confirm suitability for the specific application.

Q: Why is SPA11N80C3XKSA1 marked "Not For New Designs"?

A: This designation indicates the part is in mature or end-of-life phase. While electrically equivalent, it is restricted to legacy system support and repair applications. For new designs, STP13N80K5 or STF13N80K5 are preferred alternatives.

Q: Are all substitute parts ROHS3 compliant?

A: STP13N80K5, STF13N80K5, SPA11N80C3XKSA1, and R8010ANX are confirmed ROHS3 compliant. APT11F80B RoHS status is not specified in the provided data. Compliance verification with the component supplier is required for APT11F80B.

Q: What thermal considerations apply when switching from ISOPLUS220™ to TO-220 or TO-247 packages?

A: ISOPLUS220™ provides 166W dissipation capability. STP13N80K5 (TO-220) provides 190W, and APT11F80B (TO-247) provides 337W. TO-247 packages typically offer superior thermal performance due to larger lead frame geometry. PCB thermal pad design and heatsink interface must be evaluated for the target application's thermal requirements.

Q: Can R8010ANX be used in applications requiring the full 11A specification?

A: R8010ANX is rated for 10A continuous drain current, which is below the 11A specification of the original part. Use is limited to applications with maximum current demand of 10A. For applications requiring 11A or higher, STP13N80K5, STF13N80K5, SPA11N80C3XKSA1, or APT11F80B are required.

Q: What is the impact of different input capacitance (Ciss) values on circuit performance?

A: Input capacitance ranges from 870pF (STF13N80K5, STP13N80K5) to 4680pF (IXFC20N80P). Lower capacitance reduces gate drive power and improves switching speed. Higher capacitance increases gate drive requirements. Gate drive circuit design must accommodate the selected part's Ciss value. Substitution with lower Ciss improves efficiency; substitution with higher Ciss requires gate drive circuit verification.

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