IXFC16N80P Equivalent & Substitute Parts

Part Overview

The IXFC16N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 9A continuous drain current at 25°C. The device is housed in an ISOPLUS220™ through-hole package and is designed for high-voltage switching applications with a maximum power dissipation of 150W. The part is classified as Obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	9	A
On-State Resistance (Rds On) @ 8A, 10V	650	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5	V
Gate Charge (Qg) @ 10V	71	nC
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ 25V	4600	pF
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 150	°C
Package Type	ISOPLUS220™	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFC16N80P is determined by the following critical electrical parameters: drain-to-source voltage rating (800V), continuous drain current capability (9A minimum), on-state resistance characteristics, gate charge, and operating temperature range. All substitute parts must maintain the 800V Vdss rating and support through-hole mounting. The substitutes identified operate within the same voltage class and temperature range as the original part.

The three substitute parts are grouped based on their electrical compatibility with the IXFC16N80P:

Group 1 (Partial Current Reduction): FCPF650N80Z and FCPF850N80Z feature reduced continuous drain current ratings (8A and 6A respectively) compared to the original 9A specification. These parts maintain the 800V voltage rating and through-hole mounting but are suitable only for applications where the lower current rating is acceptable.

Group 2 (Full Electrical Equivalence): STP10NK80Z matches the original 9A continuous drain current rating and 800V voltage specification, providing direct functional equivalence with different package geometry (TO-220 versus ISOPLUS220™).

Parameter Comparison

Parameter	IXFC16N80P	FCPF650N80Z	FCPF850N80Z	STP10NK80Z
Manufacturer	IXYS	onsemi	onsemi	STMicroelectronics
Vdss (V)	800	800	800	800
Id @ 25°C (A)	9	8	6	9
Rds On (mOhm)	650 @ 8A, 10V	650 @ 4A, 10V	850 @ 3A, 10V	900 @ 4.5A, 10V
Vgs(th) (V)	5 @ 4mA	4.5 @ 800µA	4.5 @ 600µA	4.5 @ 100µA
Qg @ 10V (nC)	71	35	29	72
Vgs Max (V)	±30	±20	±20	±30
Ciss @ 25V (pF)	4600	1565 @ 100V	1315 @ 100V	2180 @ 25V
Power Dissipation (W)	150	30.5	28.4	190
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	ISOPLUS220™	TO-220F-3	TO-220F-3	TO-220
Product Status	Obsolete	Not For New Designs	Not For New Designs	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STP10NK80Z (STMicroelectronics) is the primary substitute for new designs. This part maintains electrical equivalence with the IXFC16N80P, matching the 9A continuous drain current and 800V voltage rating. The STP10NK80Z carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. The TO-220 package provides equivalent thermal performance and through-hole mounting compatibility, though physical footprint differs from the ISOPLUS220™ package. Gate charge (72 nC) and maximum gate voltage (±30V) are equivalent to the original part.

FCPF650N80Z (onsemi) is suitable for applications where continuous drain current requirements do not exceed 8A. This part offers lower gate charge (35 nC) and reduced input capacitance, which may provide switching efficiency benefits in specific circuit topologies. However, the part carries Not For New Designs status, limiting its suitability for long-term production.

FCPF850N80Z (onsemi) is applicable only to applications with continuous drain current requirements of 6A or less. The reduced current rating and Not For New Designs status make this option suitable only for legacy system maintenance or where current requirements are definitively below 6A.

Frequently Asked Questions (FAQ)

Q: Can FCPF650N80Z or FCPF850N80Z be used as direct replacements for IXFC16N80P?

A: FCPF650N80Z and FCPF850N80Z are not direct replacements due to reduced continuous drain current ratings (8A and 6A respectively versus 9A). These parts are suitable only if the application circuit operates at or below their respective current ratings. The lower power dissipation ratings (30.5W and 28.4W) also indicate reduced thermal capability compared to the original 150W specification.

Q: What are the package compatibility considerations?

A: The IXFC16N80P uses ISOPLUS220™ package, while all three substitutes use TO-220 variants (TO-220F-3 or TO-220). These packages have different physical dimensions and pin configurations. PCB layout modifications are required for package substitution. Thermal management characteristics differ between packages; the ISOPLUS220™ package may provide different heat dissipation performance than TO-220 packages.

Q: Why is STP10NK80Z recommended over the onsemi alternatives?

A: STP10NK80Z maintains full electrical equivalence with the IXFC16N80P, including the 9A continuous drain current rating and 150W+ power dissipation capability. The part carries Active product status, ensuring ongoing availability and support. ROHS3 compliance and ±30V maximum gate voltage rating match the original specification. The onsemi alternatives carry Not For New Designs status, indicating limited future availability.

Q: Are there thermal management differences between these substitutes?

A: Yes. The IXFC16N80P is rated for 150W power dissipation, while FCPF650N80Z and FCPF850N80Z are rated for 30.5W and 28.4W respectively. STP10NK80Z is rated for 190W, exceeding the original specification. These differences reflect package thermal characteristics and die design. Applications requiring the full 150W dissipation capability should use STP10NK80Z or verify that the onsemi parts' thermal performance is adequate for the specific circuit.

Q: What compliance certifications apply to these substitutes?

A: All substitute parts carry REACH Unaffected status and EAR99 ECCN classification, matching the original part. FCPF650N80Z, FCPF850N80Z, and STP10NK80Z are ROHS3 compliant. The original IXFC16N80P RoHS status is not specified in the provided data. All parts are classified under HTSUS code 8541.29.0095.

Q: Can gate charge differences affect circuit performance?

A: Yes. The IXFC16N80P has gate charge of 71 nC, while STP10NK80Z has 72 nC (equivalent), FCPF650N80Z has 35 nC, and FCPF850N80Z has 29 nC. Lower gate charge reduces driver power requirements and switching losses. If the original circuit design accounts for the 71 nC specification, substitutes with significantly different gate charge may require driver circuit evaluation to ensure adequate gate drive capability and switching speed.

Q: What is the significance of maximum gate voltage (Vgs Max) differences?

A: The IXFC16N80P and STP10NK80Z both support ±30V maximum gate voltage, while FCPF650N80Z and FCPF850N80Z support ±20V. If the original circuit applies gate voltages exceeding ±20V, the onsemi parts are not suitable. Circuits operating within ±20V gate voltage range can use any substitute without gate voltage concerns.

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