IXFC16N50P N-Channel 500V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFC16N50P is an N-Channel 500V 10A MOSFET manufactured by IXYS in the HiPerFET™ and PolarHT™ series. This device features a through-hole ISOPLUS220™ package rated for 125W power dissipation and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	10	A (Tc)
On-State Resistance (Rds On) @ 8A, 10V	450	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	5.5	V
Gate Charge (Qg) @ 10V	43	nC
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	ISOPLUS220™	—

Substitute Part Grouping Explanation

Substitution of the IXFC16N50P is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss) must equal or exceed 500V
Continuous Drain Current (Id) must meet or exceed 10A at 25°C
On-State Resistance (Rds On) must not significantly exceed 450mOhm to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
Operating temperature range must support -55°C to 150°C or equivalent

Mechanical Compatibility Requirements:

Through-hole mounting configuration required
Package footprint must accommodate board layout constraints

Substitute parts are grouped into two categories based on package type: TO-220 variants (FDPF12N50NZ, FDPF16N50UT, FQPF13N50CF, STF11NM50N, STF13NK50Z, TK11A50D, TK11A55D, TK12A50D) and alternative through-hole packages (IPA50R520CPXKSA1, R5011FNX). All substitute candidates maintain 500V Vdss rating and provide drain current ratings between 7.1A and 15A, ensuring functional equivalence within the specified electrical envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Package	Status
IXFC16N50P	IXYS	500	10 (Tc)	450 @ 8A, 10V	43 @ 10V	125	ISOPLUS220™	Obsolete
FDPF12N50NZ	Fairchild Semiconductor	500	11.5 (Tc)	520 @ 5.75A, 10V	30 @ 10V	42	TO-220-3	Active
FDPF16N50UT	Fairchild Semiconductor	500	15 (Tc)	480 @ 7.5A, 10V	45 @ 10V	38.5	TO-220-3	Active
FQPF13N50CF	onsemi	500	13 (Tc)	540 @ 6.5A, 10V	56 @ 10V	48	TO-220-3	Active
IPA50R520CPXKSA1	Infineon Technologies	500	7.1 (Tc)	520 @ 3.8A, 10V	17 @ 10V	66	TO-220-3	Obsolete
R5011FNX	Rohm Semiconductor	500	5.4 (Tc)	520 @ 5.5A, 10V	30 @ 10V	50	TO-220-3	Not For New Designs
STF11NM50N	STMicroelectronics	500	8.5 (Tc)	470 @ 4.5A, 10V	19 @ 10V	25	TO-220-3	Active
STF13NK50Z	STMicroelectronics	500	11 (Tc)	480 @ 6.5A, 10V	47 @ 10V	30	TO-220-3	Active
TK11A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	500	11 (Ta)	600 @ 5.5A, 10V	24 @ 10V	45	TO-220-3	Active
TK11A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	550	11 (Ta)	630 @ 5.5A, 10V	25 @ 10V	45	TO-220-3	Active
TK12A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	500	12 (Ta)	520 @ 6A, 10V	25 @ 10V	45	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Recommended for New Designs):

FDPF16N50UT, FQPF13N50CF, STF13NK50Z, TK12A50D(STA4,Q,M), and TK11A50D(STA4,Q,M) are recommended as primary substitutes. These parts maintain 500V Vdss rating, provide drain current ratings of 11A to 15A, and carry active product status. FDPF16N50UT and FQPF13N50CF offer the highest current ratings (15A and 13A respectively) with comparable on-state resistance characteristics. STF13NK50Z and TK12A50D provide balanced electrical performance with 11A to 12A current ratings. All four parts are available in TO-220-3 through-hole packages and support the full -55°C to 150°C operating temperature range.

Secondary Substitutes (Limited Availability or Restricted Status):

IPA50R520CPXKSA1 (Infineon CoolMOS™) is classified as obsolete and should not be selected for new designs. R5011FNX (Rohm) carries "Not For New Designs" status and provides only 5.4A continuous drain current at Tc, below the 10A requirement of the original part. STF11NM50N provides 8.5A continuous drain current, which approaches but does not fully meet the 10A specification.

Package Consideration:

The original IXFC16N50P uses ISOPLUS220™ packaging. All identified substitutes employ TO-220-3 through-hole packages. Board layout modifications are required to accommodate the different footprint. TO-220-3 packages are industry-standard and widely supported by PCB assembly processes.

Compliance and Certifications:

FDPF16N50UT, FQPF13N50CF, STF13NK50Z, TK12A50D, and TK11A50D all carry RoHS3 compliance certification and REACH unaffected status, meeting current regulatory requirements. All substitute parts maintain EAR99 export classification consistent with the original device.

Frequently Asked Questions (FAQ)

Q: Can I directly replace IXFC16N50P with any TO-220 package MOSFET rated for 500V?

A: No. Direct substitution requires matching multiple electrical parameters: minimum 10A continuous drain current at 25°C, on-state resistance not significantly exceeding 450mOhm, and compatible gate threshold voltage. Additionally, the board layout must accommodate the different footprint between ISOPLUS220™ and TO-220-3 packages.

Q: Why is TK11A55D(STA4,Q,M) listed as a substitute if it has 550V Vdss instead of 500V?

A: Higher voltage rating (550V vs. 500V) is acceptable in substitution because it provides enhanced voltage margin without compromising circuit functionality. The part maintains 11A continuous drain current and compatible gate characteristics. However, applications with strict voltage derating requirements should verify compatibility with design specifications.

Q: What is the significance of the difference between Tc and Ta current ratings?

A: Tc (case temperature) and Ta (ambient temperature) represent different measurement conditions. Tc ratings are typically lower and more conservative, reflecting actual thermal performance under specified case temperature conditions. When comparing parts, use the Tc rating for thermal design calculations to ensure worst-case performance margins.

Q: Is FDPF16N50UT a better choice than FQPF13N50CF due to higher current rating?

A: FDPF16N50UT provides 15A continuous drain current versus FQPF13N50CF's 13A, offering additional current margin. However, FQPF13N50CF exhibits lower on-state resistance (540mOhm vs. 480mOhm at rated current), resulting in lower power dissipation (48W vs. 38.5W). Selection depends on application requirements: prioritize FDPF16N50UT for current-limited designs; prioritize FQPF13N50CF for thermal-limited designs.

Q: Can I use STF11NM50N as a substitute if my application only requires 8.5A?

A: STF11NM50N is suitable only if your application's actual continuous drain current requirement is 8.5A or less. The original IXFC16N50P specification is 10A, so STF11NM50N does not meet the stated requirement. Use STF13NK50Z or higher-rated alternatives to maintain design margin.

Q: Why should I avoid IPA50R520CPXKSA1 despite its 500V rating?

A: IPA50R520CPXKSA1 is classified as obsolete and provides only 7.1A continuous drain current, below the 10A requirement. Obsolete parts face supply discontinuation risk and should not be selected for new designs or long-term production support.

Q: What are the thermal implications of switching from IXFC16N50P (125W) to FDPF16N50UT (38.5W)?

A: The lower power dissipation rating of FDPF16N50UT reflects its TO-220-3 package thermal characteristics compared to the ISOPLUS220™ package. Actual power dissipation depends on application current and switching frequency. Verify that thermal management (heatsinking, PCB layout) remains adequate for your specific operating conditions.

Q: Are all substitute parts RoHS compliant?

A: FDPF16N50UT, FQPF13N50CF, STF13NK50Z, TK12A50D, and TK11A50D carry RoHS3 compliance certification. IPA50R520CPXKSA1 and R5011FNX do not list RoHS status in provided specifications. Verify compliance requirements for your application before final part selection.

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