IXFC14N60P N-Channel 600V 8A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFC14N60P is an N-Channel 600V 8A MOSFET manufactured by IXYS in the ISOPLUS220™ package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. The part operates across a temperature range of -55°C to 150°C and delivers 125W maximum power dissipation at the case temperature. Equivalent and substitute parts must maintain compatibility across critical electrical parameters including drain-source voltage rating, continuous drain current capability, and gate charge characteristics while accommodating different package formats.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	8	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	630	mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs	36	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	2500	pF @ 25V
Power Dissipation (Max)	125	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	ISOPLUS220™	—

Substitute Part Grouping Explanation

Substitution of the IXFC14N60P is determined by the following critical electrical parameters:

Primary Matching Criteria:

Drain-Source Voltage (Vdss): 600V minimum rating required
Continuous Drain Current (Id): 7A to 12A range acceptable for applications rated at 8A
Gate Charge (Qg): 14.5 nC to 52 nC range
Rds On (Max): 380 mOhm to 620 mOhm range at 10V gate drive
Vgs (Max): ±20V to ±30V range
Operating Temperature: -55°C to 150°C minimum

Secondary Considerations:

Mounting Type: Through Hole (all candidates)
Package Format: ISOPLUS220™, TO-220F-3, TO-220FM acceptable
Input Capacitance (Ciss): 390 pF to 2500 pF range

Substitute parts are grouped into two categories: direct electrical equivalents with different package formats (TO-220F-3, TO-220FM) and higher current-rated alternatives (9A to 12A) that maintain voltage and thermal specifications within acceptable operating margins.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs Max (V)	Ciss (pF)	Power Diss (W)	Package	Status
IXFC14N60P	IXYS	600	8	630 @ 7A	36 @ 10V	±30	2500 @ 25V	125	ISOPLUS220™	Obsolete
FCPF11N60F	onsemi	600	11	380 @ 5.5A	52 @ 10V	±30	1490 @ 25V	36	TO-220F-3	Not For New Designs
FCPF600N60Z	Fairchild Semiconductor	600	7.4	600 @ 3.7A	26 @ 10V	±20	1120 @ 25V	89	TO-220F-3	Active
FCPF7N60	onsemi	600	7	600 @ 3.5A	30 @ 10V	±30	920 @ 25V	31	TO-220F-3	Not For New Designs
FCPF7N60YDTU	Fairchild Semiconductor	600	7	600 @ 3.5A	30 @ 10V	±30	920 @ 25V	31	TO-220F-3 (Y-Forming)	Active
R6007ENX	Rohm Semiconductor	600	7	620 @ 2.4A	20 @ 10V	±20	390 @ 25V	40	TO-220FM	Active
R6007KNX	Rohm Semiconductor	600	7	620 @ 2.4A	14.5 @ 10V	±20	470 @ 25V	46	TO-220FM	Active
R6009ENX	Rohm Semiconductor	600	9	535 @ 2.8A	23 @ 10V	±20	430 @ 25V	40	TO-220FM	Active
R6009KNX	Rohm Semiconductor	600	9	535 @ 2.8A	16.5 @ 10V	±20	540 @ 25V	48	TO-220FM	Active
R6012FNX	Rohm Semiconductor	600	12	510 @ 6A	35 @ 10V	±30	1300 @ 25V	50	TO-220FM	Active
SPA07N60C3XKSA1	Infineon Technologies	650	7.3	600 @ 4.6A	27 @ 10V	±20	790 @ 25V	32	TO-220-3 Full Pack	Active

Engineering Selection Recommendations

Active Status Substitutes (Recommended for New Designs):

The FCPF600N60Z (Fairchild Semiconductor) and FCPF7N60YDTU (Fairchild Semiconductor) are active products suitable for new design implementations. Both maintain 600V Vdss rating and 7A continuous drain current with TO-220F-3 packaging. The FCPF7N60YDTU includes Y-forming lead configuration for automated assembly compatibility. These parts deliver 89W and 31W power dissipation respectively and operate across the full -55°C to 150°C temperature range.

Higher Current Alternatives (Active Status):

The Rohm Semiconductor R6009ENX, R6009KNX, and R6012FNX series provide 9A to 12A continuous drain current ratings while maintaining 600V Vdss specification. These parts are active products with full temperature range support (-55°C to 150°C for R6009KNX and R6012FNX). The R6012FNX offers 12A rating with 510 mOhm Rds On and ±30V Vgs maximum, providing direct parameter alignment with the original IXFC14N60P across gate voltage specification.

Voltage-Elevated Alternative:

The SPA07N60C3XKSA1 (Infineon Technologies CoolMOS™) provides 650V Vdss rating with 7.3A continuous drain current. This part is active and RoHS3 compliant, suitable for applications requiring enhanced voltage margin. The 600 mOhm Rds On and 27 nC gate charge fall within acceptable substitution parameters.

Obsolete or Not For New Designs Status:

The FCPF11N60F (onsemi) and FCPF7N60 (onsemi) are classified as "Not For New Designs" and should not be selected for new product development. The IXFC14N60P itself is obsolete and requires replacement.

Frequently Asked Questions (FAQ)

Q: Can the FCPF7N60YDTU directly replace the IXFC14N60P in existing designs?

A: The FCPF7N60YDTU maintains electrical compatibility across Vdss (600V), continuous drain current (7A nominal vs. 8A original), gate charge (30 nC vs. 36 nC), and operating temperature range (-55°C to 150°C). The primary difference is package format: TO-220F-3 with Y-forming leads versus ISOPLUS220™. PCB layout modification is required to accommodate the different package footprint and lead configuration.

Q: What is the advantage of selecting R6012FNX over lower current alternatives?

A: The R6012FNX provides 12A continuous drain current rating, offering 50% higher current capacity than the original 8A specification. This allows thermal margin in applications approaching the original current limit. The part maintains 600V Vdss, ±30V Vgs maximum (matching the original), and operates across -55°C to 150°C. The 510 mOhm Rds On provides improved on-state performance compared to the original 630 mOhm specification.

Q: Why does SPA07N60C3XKSA1 have 650V Vdss instead of 600V?

A: The SPA07N60C3XKSA1 is rated for 650V Vdss, which exceeds the original 600V specification. This higher voltage rating does not prevent substitution in 600V applications; the device operates safely at lower voltages with additional voltage margin. The 7.3A continuous drain current and 600 mOhm Rds On provide functional equivalence for the intended application.

Q: Are there package compatibility considerations when substituting TO-220FM parts?

A: Yes. The TO-220FM package differs from ISOPLUS220™ in lead spacing, mounting hole diameter, and thermal interface design. TO-220FM parts require PCB footprint redesign and may have different thermal performance characteristics. Verify mounting hardware compatibility and thermal path requirements before implementation.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects switching speed and driver circuit requirements. The original IXFC14N60P specifies 36 nC at 10V gate drive. Substitute parts range from 14.5 nC to 52 nC. Lower gate charge (R6007KNX at 14.5 nC) reduces driver power dissipation and enables faster switching. Higher gate charge (FCPF11N60F at 52 nC) requires more driver current but may provide improved noise immunity. Driver circuit verification is necessary when gate charge varies significantly.

Q: Can R6007ENX and R6007KNX be used interchangeably?

A: Both parts share identical electrical specifications (600V Vdss, 7A Id, 620 mOhm Rds On, TO-220FM package) but differ in gate charge (20 nC vs. 14.5 nC) and power dissipation (40W vs. 46W). The R6007KNX provides lower gate charge and higher power dissipation rating. Selection depends on driver circuit design and thermal management requirements. They are not directly interchangeable without circuit analysis.

Q: What compliance certifications should be verified for substitute parts?

A: All listed substitute parts maintain REACH Unaffected status and EAR99 export classification, matching the original IXFC14N60P. Active status parts (FCPF600N60Z, FCPF7N60YDTU, R6009ENX, R6009KNX, R6012FNX, SPA07N60C3XKSA1) are RoHS3 compliant. Verify specific compliance requirements for your application and regional regulations before final part selection.

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