IXFC10N80P Equivalent & Substitute Parts

Part Overview

The IXFC10N80P is an N-Channel MOSFET rated for 800V drain-to-source voltage with 5A continuous drain current at 25°C. This device is packaged in the ISOPLUS220™ through-hole format and is part of the PolarHV™ series from IXYS. The product is currently obsolete, making identification of equivalent and substitute components necessary for ongoing system support, maintenance, and new design implementations where legacy specifications must be maintained or functionally replaced.

Substiute Parts

IXFC10N80P
IXYSIn Stock: 1193IXFC10N80P Datasheet
IXFC10N80P
Current Part
FQP6N80C
onsemiIn Stock: 16248FQP6N80C Datasheet
FQP6N80C
Similar

Key Parameters

Parameter Value
Manufacturer Part Number IXFC10N80P
Manufacturer IXYS
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Mounting Type Through Hole
Package / Case ISOPLUS220™
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Substitute Part Grouping Explanation

Substitution of the IXFC10N80P is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 800V
  • Current - Continuous Drain (Id) @ 25°C: Must equal or exceed 5A
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole
  • Package compatibility: Devices in alternative through-hole packages (TO-220-3, ISOPLUS220™) are acceptable when electrical parameters are met

The FQP6N80C from onsemi meets all electrical requirements with a Vdss of 800V and Id of 5.5A, exceeding the minimum continuous drain current specification. While packaged in TO-220-3 rather than ISOPLUS220™, both are through-hole formats suitable for PCB integration in applications requiring high-voltage N-Channel MOSFET functionality.

Parameter Comparison

Parameter IXFC10N80P FQP6N80C
Manufacturer IXYS onsemi
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5.5A (Tc)
Mounting Type Through Hole Through Hole
Package / Case ISOPLUS220™ TO-220-3
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

The FQP6N80C is a functional substitute for the obsolete IXFC10N80P based on the following factors:

Electrical Equivalence: Both devices share identical 800V Vdss ratings and exceed the 5A continuous drain current requirement, with the FQP6N80C providing 5.5A capability. This ensures electrical compatibility in applications designed for the IXFC10N80P.

Regulatory Compliance: Both parts maintain REACH Unaffected status and EAR99 ECCN classification, ensuring compliance with export and environmental regulations applicable to the original design.

Product Availability: The FQP6N80C is in active production status with substantial inventory availability (16,162 pcs), whereas the IXFC10N80P is obsolete. This availability differential makes the FQP6N80C the practical choice for ongoing system support and new implementations.

Package Consideration: The FQP6N80C uses TO-220-3 packaging instead of ISOPLUS220™. Both are through-hole formats; however, PCB layout modifications may be required to accommodate the different pin configuration and thermal characteristics of the TO-220-3 package.

Frequently Asked Questions (FAQ)

Q: Can the FQP6N80C directly replace the IXFC10N80P without PCB modifications?

A: The FQP6N80C meets all electrical specifications for the IXFC10N80P. However, the package format differs (TO-220-3 versus ISOPLUS220™). Direct pin-for-pin replacement on existing PCBs designed for ISOPLUS220™ is not possible. PCB layout redesign is required to accommodate the TO-220-3 footprint.

Q: What are the key electrical parameters that determine substitution eligibility?

A: Substitution eligibility is determined by: (1) Drain to Source Voltage (Vdss) equal to or greater than 800V, (2) Continuous Drain Current (Id) equal to or greater than 5A at 25°C, (3) N-Channel FET type, and (4) MOSFET technology. The FQP6N80C satisfies all four criteria.

Q: Are there thermal performance differences between these devices?

A: The FQP6N80C specifies a maximum power dissipation of 158W at Tc, whereas the IXFC10N80P does not provide this specification in the available data. The TO-220-3 package of the FQP6N80C has established thermal characteristics suitable for high-power applications. Thermal analysis specific to your application is necessary to confirm adequate heat dissipation.

Q: What is the significance of the different package formats?

A: ISOPLUS220™ and TO-220-3 are both through-hole packages but have different physical dimensions, pin spacing, and mounting configurations. The TO-220-3 is a widely standardized package with extensive PCB footprint availability. Selection between packages depends on available PCB real estate and thermal management requirements of the application.

Q: Are both devices compliant with current environmental and export regulations?

A: Yes. Both the IXFC10N80P and FQP6N80C maintain REACH Unaffected status and EAR99 ECCN classification, confirming compliance with current environmental and export control regulations.

Q: Why is the IXFC10N80P listed as obsolete?

A: The IXFC10N80P is classified as obsolete by IXYS, indicating it is no longer in active production. This status necessitates the identification of substitute components for applications requiring continued system support or new designs based on legacy specifications.

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