IXFB80N50Q2 Equivalent & Substitute Parts

Part Overview

The IXFB80N50Q2 is an N-Channel 500V 80A MOSFET manufactured by IXYS in the HiPerFET™ Q2 Class series. This device is housed in a PLUS264™ package (TO-264-3, TO-264AA) and is rated for 960W maximum power dissipation at the case temperature. The part is marked as Not For New Designs, indicating it has been superseded in the manufacturer's product line. Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications within the same package family or compatible alternatives.

Substiute Parts

IXFB80N50Q2

IXYSIn Stock: 1414IXFB80N50Q2 Datasheet

Current PartRFQ

IXFB100N50P

IXYSIn Stock: 1593IXFB100N50P Datasheet

SimilarRFQ

STY60NM50

STMicroelectronicsIn Stock: 1276STY60NM50 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFB80N50Q2 are selected based on the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss) must equal or exceed 500V
• Continuous Drain Current (Id) must meet or exceed 80A at 25°C case temperature
• Gate voltage rating (Vgs Max) must be ±30V or greater
• Operating temperature range must support -55°C to 150°C or equivalent upper limit

Mechanical Compatibility Criteria:

• Package type must be PLUS264™ (TO-264-3, TO-264AA) or compatible through-hole alternative
• Mounting type must be through-hole

Regulatory Compliance:

• RoHS3 compliance required
• REACH Unaffected status required
• Moisture Sensitivity Level (MSL) of 1 (Unlimited)

The identified substitutes meet these criteria with the following characteristics:

IXFB100N50P: Exceeds current rating (100A vs. 80A), maintains 500V Vdss, improves power dissipation (1890W vs. 960W), and remains within the same IXYS HiPerFET™ family with PLUS264™ packaging. Product status is Active.

STY60NM50: Provides reduced current rating (60A vs. 80A) but maintains 500V Vdss with improved on-resistance characteristics. Uses MAX247™ package (TO-247-3), which is a compatible through-hole alternative. Manufactured by STMicroelectronics with Active product status.

Parameter Comparison

Engineering Selection Recommendations

IXFB100N50P Selection: The IXFB100N50P is the primary substitute for new designs. It maintains identical voltage rating (500V Vdss) and package family (PLUS264™), while providing superior current handling (100A vs. 80A) and power dissipation capability (1890W vs. 960W). The part carries Active product status, ensuring long-term availability and manufacturing support. All regulatory certifications (RoHS3, REACH Unaffected, MSL 1) are maintained. This substitute is suitable for direct replacement in applications where the increased current capacity does not create thermal or layout constraints.

STY60NM50 Selection: The STY60NM50 serves as an alternative substitute when current derating is acceptable. This STMicroelectronics device maintains the 500V voltage rating but operates at reduced continuous current (60A vs. 80A). The MAX247™ package (TO-247-3) is mechanically compatible with through-hole mounting requirements. The part exhibits improved on-resistance (50 mOhm vs. 60 mOhm) and lower input capacitance (7500 pF vs. 15000 pF), which may provide advantages in switching applications. Active product status and full regulatory compliance are confirmed. This substitute is appropriate for applications where current requirements do not exceed 60A and where the different package footprint is accommodated in the design.

Compliance Basis: Both substitutes maintain RoHS3 compliance, REACH Unaffected status, and MSL 1 rating, ensuring compatibility with modern manufacturing and environmental standards. The transition from Not For New Designs status (IXFB80N50Q2) to Active status (both substitutes) provides assurance of continued supply and technical support.

Frequently Asked Questions (FAQ)

Q: Can the IXFB100N50P directly replace the IXFB80N50Q2 without circuit modification?

A: The IXFB100N50P is electrically and mechanically compatible with the IXFB80N50Q2. Both devices share identical voltage ratings (500V Vdss), gate voltage specifications (±30V), and package type (PLUS264™). The higher current rating (100A vs. 80A) and power dissipation (1890W vs. 960W) of the IXFB100N50P do not require circuit changes for direct substitution. Gate drive circuitry remains compatible due to matching gate charge and threshold voltage characteristics.

Q: What are the key differences between the IXFB100N50P and STY60NM50?

A: The primary differences are manufacturer, current rating, and package type. The IXFB100N50P (IXYS, 100A, PLUS264™) provides higher current capacity than the STY60NM50 (STMicroelectronics, 60A, MAX247™). Both maintain 500V Vdss and ±30V gate voltage ratings. The STY60NM50 exhibits lower input capacitance (7500 pF vs. 20000 pF) and improved on-resistance characteristics. Package selection depends on PCB layout constraints and mounting infrastructure.

Q: Is the STY60NM50 suitable for applications requiring 80A continuous current?

A: No. The STY60NM50 is rated for 60A continuous drain current at 25°C case temperature, which is below the 80A requirement of the original IXFB80N50Q2. This substitute is appropriate only for applications where the maximum required current does not exceed 60A. For full 80A operation, the IXFB100N50P is the appropriate substitute.

Q: Are there package compatibility issues when substituting the STY60NM50?

A: The STY60NM50 uses the MAX247™ package (TO-247-3), while the IXFB80N50Q2 uses PLUS264™ (TO-264-3, TO-264AA). Both are through-hole packages with different pin configurations and footprints. PCB layout modification is required to accommodate the STY60NM50. The IXFB100N50P maintains identical PLUS264™ packaging, eliminating layout changes.

Q: Do all three parts meet current environmental and regulatory standards?

A: Yes. The IXFB80N50Q2, IXFB100N50P, and STY60NM50 are all RoHS3 compliant, REACH Unaffected, and carry MSL 1 (Unlimited) ratings. These certifications confirm compliance with current environmental regulations and manufacturing standards.

Q: What is the significance of the IXFB80N50Q2 being marked "Not For New Designs"?

A: This designation indicates the IXFB80N50Q2 has been superseded by newer products in the manufacturer's portfolio. While existing inventory remains available, IXYS does not recommend this part for new circuit designs. The IXFB100N50P (Active status) is the recommended replacement for new applications.

Q: How do gate charge characteristics affect substitution suitability?

A: Gate charge (Qg) determines the energy required to switch the transistor and influences gate drive circuit design. The IXFB80N50Q2 has 250 nC gate charge, the IXFB100N50P has 240 nC, and the STY60NM50 has 266 nC. These values are sufficiently similar that existing gate drive circuits designed for the IXFB80N50Q2 will operate correctly with either substitute without modification.

Q: What thermal considerations apply when selecting between these substitutes?

A: The IXFB100N50P provides superior thermal performance with 1890W maximum power dissipation versus 960W for the IXFB80N50Q2. The STY60NM50 is rated for 560W. In thermally constrained applications, the IXFB100N50P offers improved thermal headroom. The STY60NM50 may require enhanced cooling if used in high-power applications. Thermal management design should account for the specific power dissipation rating of the selected substitute.