IXFB110N60P3 Equivalent & Substitute Parts

Part Overview

The IXFB110N60P3 is an N-Channel 600V 110A MOSFET manufactured by IXYS in the HiPerFET™ and Polar3™ series. This device is housed in a PLUS264™ package and rated for 1890W maximum power dissipation at case temperature. The component is classified as Active product status with full RoHS3 compliance.

Substitute parts become necessary when the IXFB110N60P3 reaches end-of-life inventory constraints, when alternative packaging formats are required for specific board layouts, or when design requirements necessitate different electrical performance characteristics within the 600V N-Channel MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	110	A (Tc)
Rds On (Max) @ 55A, 10V	56	mOhm
Gate Charge (Qg) @ 10V	245	nC
Power Dissipation (Max)	1890	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	PLUS264™ (TO-264-3)	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IXFB110N60P3 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 600V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Mounting Type: Must be Through Hole
RoHS3 Compliance: Required

Secondary Compatibility Factors:

Continuous Drain Current (Id): Substitute parts may have lower current ratings; applications must verify current requirements
Rds On (Max): Substitute parts may have higher on-resistance; thermal and efficiency analysis required
Gate Charge (Qg): Substitute parts may have different gate charge; drive circuit compatibility must be confirmed
Package Format: Substitute parts may use different through-hole packages (TO-247-3 vs. PLUS264™); PCB layout modifications may be necessary
Power Dissipation (Max): Substitute parts may have lower power ratings; thermal management design must be re-evaluated

The substitute parts listed (FCH070N60E and FCH072N60) meet the primary substitution criteria but exhibit reduced continuous drain current (52A vs. 110A) and lower maximum power dissipation (481W vs. 1890W). These differences require application-level verification.

Parameter Comparison

Parameter	IXFB110N60P3	FCH070N60E	FCH072N60	Unit
Manufacturer	IXYS	onsemi	onsemi	—
Drain to Source Voltage (Vdss)	600	600	600	V
Continuous Drain Current (Id) @ 25°C	110	52	52	A (Tc)
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Vgs 10V	56 @ 55A	70 @ 26A	72 @ 26A	mOhm
Gate Charge (Qg) @ 10V	245	166	125	nC
Vgs (Max)	±30	±20	±20	V
Power Dissipation (Max)	1890	481	481	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	PLUS264™ (TO-264-3)	TO-247-3	TO-247-3	—
FET Type	N-Channel	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
RoHS3 Compliance	Yes	Yes	Yes	—
Product Status	Active	Not For New Designs	Not For New Designs	—

Engineering Selection Recommendations

IXFB110N60P3 (Primary Component)

The IXFB110N60P3 maintains Active product status and is the preferred selection for new designs. This component offers the highest continuous drain current (110A) and maximum power dissipation (1890W) within the 600V N-Channel MOSFET category specified. Full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) support high-reliability applications. The PLUS264™ package provides optimized thermal performance for high-current applications.

FCH070N60E (onsemi Substitute)

The FCH070N60E is classified as Not For New Designs. This part is suitable only for legacy system maintenance, repair, or replacement scenarios where the original IXFB110N60P3 is unavailable. The reduced continuous drain current (52A vs. 110A) and lower power dissipation (481W vs. 1890W) restrict this substitute to applications with lower current requirements. The TO-247-3 package requires PCB layout modification from the original PLUS264™ design. RoHS3 compliance is maintained.

FCH072N60 (onsemi Substitute)

The FCH072N60 is classified as Not For New Designs. This part is suitable only for legacy system maintenance, repair, or replacement scenarios where the original IXFB110N60P3 is unavailable. The reduced continuous drain current (52A vs. 110A) and lower power dissipation (481W vs. 1890W) restrict this substitute to applications with lower current requirements. The TO-247-3 package requires PCB layout modification from the original PLUS264™ design. RoHS3 compliance is maintained. Gate charge is lower (125nC vs. 245nC), which may reduce drive circuit stress.

Compliance Summary

All listed parts maintain RoHS3 compliance and REACH Unaffected status. The IXFB110N60P3 is the only component with Active product status. Substitute parts are designated Not For New Designs and should be used only when the primary component is unavailable or when legacy system requirements mandate their use.

Frequently Asked Questions (FAQ)

Q: Can FCH070N60E or FCH072N60 be used as direct replacements for IXFB110N60P3 in existing designs?

A: Direct replacement is not recommended. Both substitute parts have reduced continuous drain current (52A vs. 110A) and lower maximum power dissipation (481W vs. 1890W). Applications operating at or near the IXFB110N60P3 current rating will exceed the thermal and electrical limits of the substitute parts. Additionally, the package change from PLUS264™ to TO-247-3 requires PCB layout modification.

Q: What are the key electrical differences between IXFB110N60P3 and the substitute parts?

A: The primary differences are continuous drain current (110A vs. 52A), maximum power dissipation (1890W vs. 481W), gate charge (245nC vs. 166nC or 125nC), and maximum gate-source voltage (±30V vs. ±20V). All parts share the same 600V drain-source voltage rating and -55°C to 150°C operating temperature range.

Q: Are package dimensions compatible between PLUS264™ and TO-247-3?

A: No. PLUS264™ and TO-247-3 are distinct through-hole package formats with different pin configurations and footprints. PCB layout redesign is required if substituting between these packages.

Q: What is the significance of the "Not For New Designs" product status on the substitute parts?

A: This designation indicates that onsemi has discontinued active development and support for FCH070N60E and FCH072N60. These parts should be used only for maintenance, repair, or replacement of existing systems. New designs must use the IXFB110N60P3 or identify alternative active-status components.

Q: Can the substitute parts handle the same gate charge and drive voltage as the IXFB110N60P3?

A: Gate charge differs significantly (FCH070N60E: 166nC, FCH072N60: 125nC vs. IXFB110N60P3: 245nC). The lower gate charge in substitute parts may reduce drive circuit stress. However, maximum gate-source voltage is lower (±20V vs. ±30V), which may restrict drive circuit design flexibility.

Q: Are all listed parts RoHS3 compliant?

A: Yes. IXFB110N60P3, FCH070N60E, and FCH072N60 are all RoHS3 compliant. REACH status is Unaffected for all parts.

Q: What thermal considerations apply when substituting parts?

A: The IXFB110N60P3 is rated for 1890W maximum power dissipation, while substitute parts are rated for 481W. Applications must recalculate thermal performance based on actual operating current and duty cycle. The PLUS264™ package typically provides superior thermal performance compared to TO-247-3 due to larger die contact area.

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