IXFB100N50P N-Channel 500V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFB100N50P is an N-Channel MOSFET manufactured by IXYS, designed for high-voltage switching applications requiring 500V drain-to-source voltage capability and 100A continuous drain current. This device operates in the HiPerFET™ series and is housed in a PLUS264™ through-hole package. The part maintains Active product status with 1496 units in current inventory stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining mechanical compatibility and regulatory compliance. Alternative sources become necessary for supply chain continuity, extended lead time mitigation, or design flexibility across manufacturing partners.

Substiute Parts

IXFB100N50P

IXYSIn Stock: 1593IXFB100N50P Datasheet

Current PartRFQ

FDL100N50F

onsemiIn Stock: 6209FDL100N50F Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFB100N50P is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Drain to Source Voltage (Vdss): Must equal 500V
• Continuous Drain Current (Id) @ 25°C: Must equal 100A (Tc)
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Gate Voltage Rating (Vgs Max): Must equal ±30V
• Drive Voltage: Must equal 10V

Mechanical Compatibility Criteria:

• Mounting Type: Must be Through Hole
• Package / Case: Must be TO-264-3 or TO-264AA
• Supplier Device Package: Must be compatible with PLUS264™ or TO-264-3 footprint

Regulatory Compliance Criteria:

• RoHS Status: Must be ROHS3 Compliant
• REACH Status: Must be REACH Unaffected
• ECCN Classification: Must be EAR99

The FDL100N50F from onsemi meets all substitution criteria and is classified as an equivalent part within the UniFET™ series.

Parameter Comparison

Engineering Selection Recommendations

Both the IXFB100N50P and FDL100N50F are Active products with full regulatory compliance under ROHS3 and REACH standards. Both devices carry EAR99 export classification and are suitable for direct substitution in applications requiring 500V, 100A N-Channel MOSFET functionality.

IXFB100N50P Selection Basis:

• Lower on-resistance specification (49 mOhm @ 50A, 10V) provides reduced conduction losses
• Higher input capacitance (20000 pF @ 25V) may require gate drive circuit consideration
• HiPerFET™ series designation indicates IXYS process technology
• Current inventory: 1496 units

FDL100N50F Selection Basis:

• Higher power dissipation rating (2500W vs. 1890W) provides thermal margin
• Lower input capacitance (12000 pF @ 25V) reduces gate drive requirements
• Slightly higher on-resistance (55 mOhm @ 50A, 10V) remains within acceptable tolerance
• UniFET™ series designation indicates onsemi process technology
• Current inventory: 6196 units
• Operating temperature range specified: -55°C ~ 150°C (TJ)

Both parts are mechanically and electrically interchangeable within the TO-264-3 / TO-264AA footprint. Selection between these devices depends on application-specific requirements for thermal performance, gate drive capability, and supply chain availability.

Frequently Asked Questions (FAQ)

Q: Can the FDL100N50F directly replace the IXFB100N50P in existing designs?

A: Yes. Both devices share identical voltage and current ratings (500V, 100A), equivalent gate charge specifications (240 nC vs. 238 nC @ 10V), and identical package footprints (TO-264-3 / TO-264AA). The devices are pin-compatible and electrically interchangeable for applications within the specified parameter ranges.

Q: What is the significance of the difference in Rds On specifications (49 mOhm vs. 55 mOhm)?

A: The IXFB100N50P exhibits lower on-resistance, resulting in reduced conduction losses and lower junction temperature rise during operation. The FDL100N50F's higher on-resistance is offset by its superior power dissipation rating (2500W vs. 1890W), allowing thermal design flexibility depending on application duty cycle and cooling provisions.

Q: Are there package compatibility concerns between PLUS264™ and TO-264-3?

A: No. The PLUS264™ package designation used by IXYS and the TO-264-3 designation used by onsemi refer to the same physical footprint and pin configuration. Both devices are housed in identical through-hole packages suitable for PCB mounting in the same footprint.

Q: How do the input capacitance differences affect circuit design?

A: The IXFB100N50P exhibits higher input capacitance (20000 pF @ 25V) compared to the FDL100N50F (12000 pF @ 25V). Higher input capacitance requires greater gate charge delivery during switching transitions, potentially increasing gate drive circuit power dissipation. The FDL100N50F's lower capacitance may reduce gate drive requirements in high-frequency switching applications.

Q: What is the impact of gate threshold voltage measurement conditions?

A: Both devices specify 5V gate threshold voltage but at different measurement currents (IXFB100N50P @ 8mA; FDL100N50F @ 250µA). This difference reflects manufacturer test methodology and does not affect functional equivalence. Both devices operate within the ±30V gate voltage specification and respond identically to standard gate drive circuits.

Q: Are both parts suitable for high-temperature applications?

A: The FDL100N50F specifies an operating temperature range of -55°C ~ 150°C (TJ). The IXFB100N50P does not provide explicit operating temperature range in the available specifications. For applications requiring extended temperature operation, the FDL100N50F provides documented thermal performance boundaries.

Q: What regulatory certifications apply to both devices?

A: Both the IXFB100N50P and FDL100N50F are ROHS3 Compliant and REACH Unaffected. Both carry EAR99 export classification. These certifications ensure compliance with environmental and trade regulations for industrial and commercial applications.