IXFA7N60P3 N-Channel MOSFET 600V 7A Equivalent & Substitute Parts

Part Overview

The IXFA7N60P3 is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 7A continuous drain current at 25°C. This device is housed in a TO-263AA (D2PAK) surface mount package and is part of the HiPerFET™ and Polar3™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility within the specified voltage and current ratings while accommodating the same or compatible package footprints.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7	A (Tc)
On-State Resistance (Rds On) @ Id, Vgs	1.15 Ohm @ 3.5A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 1mA
Gate Charge (Qg) @ Vgs	13.3	nC @ 10V
Input Capacitance (Ciss) @ Vds	705	pF @ 25V
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFA7N60P3 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum Vdss rating of 600V to ensure safe operation within the original design envelope. Parts with higher voltage ratings (650V, 620V) are acceptable as they provide additional margin.

Current Rating Compatibility: The continuous drain current rating must support the application requirements. The IXFA7N60P3 is rated at 7A (Tc). Substitute parts with ratings of 6A, 6.2A, 8A, or 4.5A represent different current classes and must be selected based on actual circuit requirements.

Package Footprint Compatibility: The original part uses TO-263-3 (D2PAK) surface mount packaging. Substitute parts must use identical or mechanically compatible package types to ensure PCB layout compatibility without redesign.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. The IXFA7N60P3 specifies 1.15 Ohm @ 3.5A, 10V. Substitute parts with similar or lower Rds On values maintain or improve thermal characteristics.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters affect switching speed and gate drive requirements. Lower values reduce switching losses and simplify gate drive circuit design.

Product Status and Compliance: Active status parts are preferred for new designs and ongoing production. RoHS3 compliance and REACH unaffected status ensure regulatory alignment.

Parameter Comparison

Parameter	IXFA7N60P3	IXFA8N65X2	IRFBC40ASPBF	IRFBC40ASTRLPBF	IRFBC40SPBF	R6004ENJTL	R6004KNJTL	STB6N60M2
Manufacturer	IXYS	IXYS	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Rohm Semiconductor	Rohm Semiconductor	STMicroelectronics
Vdss (V)	600	650	600	600	600	600	600	600
Id @ 25°C (A)	7	8	6.2	6.2	6.2	4	4	4.5
Rds On @ Id, Vgs (Ohm)	1.15 @ 3.5A, 10V	0.45 @ 4A, 10V	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	0.98 @ 1.5A, 10V	0.98 @ 1.5A, 10V	1.2 @ 2.25A, 10V
Vgs(th) @ Id (V)	5 @ 1mA	5 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 1mA	5 @ 1mA	4 @ 250µA
Qg @ Vgs (nC)	13.3 @ 10V	11 @ 10V	42 @ 10V	42 @ 10V	60 @ 10V	15 @ 10V	10.2 @ 10V	8 @ 10V
Ciss @ Vds (pF)	705 @ 25V	790 @ 25V	1036 @ 25V	1036 @ 25V	1300 @ 25V	250 @ 25V	280 @ 25V	232 @ 100V
Power Dissipation (W)	180 (Tc)	150 (Ta)	125 (Tc)	125 (Tc)	130 (Tc)	40 (Tc)	58 (Tc)	60 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150	-55 to 150
Package	TO-263AA	TO-263	TO-263	TO-263	TO-263	LPTS	LPTS	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IXFA8N65X2

The IXFA8N65X2 is the closest functional equivalent from the same manufacturer (IXYS). It maintains the HiPerFET™ series lineage and offers improved specifications: 650V Vdss (50V margin above original), 8A continuous drain current (14% higher), and significantly lower Rds On (0.45 Ohm vs. 1.15 Ohm). The part is active status with ROHS3 compliance and REACH unaffected designation. The TO-263 D2PAK package is mechanically compatible with the original TO-263AA footprint. Gate charge is reduced to 11 nC, improving switching performance.

Secondary Substitute: STB6N60M2

The STB6N60M2 from STMicroelectronics is an active-status alternative with identical 600V Vdss rating and ROHS3 compliance. It features the MDmesh™ II Plus technology with lower gate charge (8 nC) and input capacitance (232 pF @ 100V), reducing switching losses. The 4.5A continuous drain current is lower than the original 7A rating and must be evaluated against circuit requirements. The D2PAK package is compatible. This part is suitable for applications where the lower current rating is acceptable and switching efficiency is prioritized.

Alternative Substitute: IRFBC40ASPBF or IRFBC40ASTRLPBF

The IRFBC40 series from Vishay Siliconix maintains 600V Vdss and TO-263 D2PAK packaging. The IRFBC40ASPBF (tube packaging) and IRFBC40ASTRLPBF (tape & reel packaging) are electrically identical with 6.2A continuous drain current. Both are active status with ROHS3 compliance. The 1.2 Ohm Rds On is comparable to the original. Higher gate charge (42 nC) and input capacitance (1036 pF) result in increased switching losses compared to the IXFA7N60P3. These parts are suitable for applications where the 6.2A current rating is sufficient and cost is a primary consideration.

Lower Current Alternative: R6004KNJTL

The R6004KNJTL from Rohm Semiconductor provides 600V Vdss with 4A continuous drain current in an LPTS package. This part is active status with ROHS3 compliance and REACH unaffected designation. The lower current rating restricts its use to applications requiring 4A or less. The 0.98 Ohm Rds On and 10.2 nC gate charge offer improved efficiency characteristics. Package compatibility must be verified as LPTS differs from TO-263.

Compliance and Regulatory Status

All recommended substitute parts maintain ROHS3 compliance and are classified as REACH unaffected. The IXFA8N65X2, IRFBC40 variants, and STB6N60M2 are all active-status products, ensuring long-term availability and production support. The original IXFA7N60P3 obsolete status necessitates transition to one of these active alternatives for new designs and ongoing production.

Frequently Asked Questions (FAQ)

Q: Can the IXFA8N65X2 directly replace the IXFA7N60P3 without circuit modification?

A: The IXFA8N65X2 is mechanically and electrically compatible for direct substitution in most applications. The higher voltage rating (650V vs. 600V) and improved Rds On (0.45 Ohm vs. 1.15 Ohm) provide enhanced performance margins. The TO-263 D2PAK package is footprint-compatible with the original TO-263AA. Gate drive circuits may benefit from the lower gate charge (11 nC vs. 13.3 nC), but existing gate drive designs will function correctly.

Q: What is the impact of selecting a substitute with lower continuous drain current rating?

A: Substitute parts with lower current ratings (such as R6004KNJTL at 4A or STB6N60M2 at 4.5A) must be evaluated against actual circuit current requirements. If the application demands the full 7A rating of the original part, a lower-rated substitute will result in thermal stress and potential device failure. Current rating selection must be based on the maximum continuous drain current in the specific application, not the original part's rating.

Q: Are LPTS and TO-263 packages interchangeable?

A: LPTS and TO-263 packages are not mechanically interchangeable. LPTS is a smaller surface mount package with different pin spacing and footprint. PCB layout redesign is required if transitioning from TO-263 to LPTS. The R6004ENJTL and R6004KNJTL use LPTS packaging and are suitable only for designs that can accommodate this package type or where PCB redesign is feasible.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. Lower gate charge reduces switching losses and simplifies gate drive circuit design. The IXFA8N65X2 (11 nC) and STB6N60M2 (8 nC) have lower gate charge than the original IXFA7N60P3 (13.3 nC), improving switching efficiency. Higher gate charge parts such as IRFBC40SPBF (60 nC) require more gate drive current and increase switching losses.

Q: What is the significance of Rds On variation among substitute parts?

A: On-state resistance (Rds On) directly affects power dissipation and thermal performance. Lower Rds On values reduce conduction losses. The IXFA8N65X2 (0.45 Ohm) offers significantly lower losses than the original (1.15 Ohm), while IRFBC40 variants (1.2 Ohm) are comparable. In high-current or high-frequency applications, lower Rds On reduces heat generation and may eliminate the need for additional thermal management.

Q: Is packaging type critical for substitution?

A: Packaging type is critical for PCB compatibility. The original IXFA7N60P3 uses TO-263AA, which is mechanically compatible with standard TO-263 and D2PAK packages. Substitutes using identical or compatible packages (IXFA8N65X2, IRFBC40 variants, STB6N60M2) can be used without PCB redesign. Parts using different packages (R6004 series in LPTS) require PCB layout modification.

Q: Why is product status (Active vs. Obsolete) important for substitution?

A: Active-status parts ensure long-term availability, consistent manufacturing processes, and ongoing technical support. The original IXFA7N60P3 is obsolete, meaning production has ended and inventory is limited. All recommended substitutes are active-status products, guaranteeing supply chain continuity for new designs and production runs. Obsolete parts should not be selected for new designs.

Q: Can I use a substitute with higher voltage rating in a 600V application?

A: Yes. A substitute with higher voltage rating (such as IXFA8N65X2 at 650V) is acceptable in a 600V application. The higher voltage rating provides additional safety margin and does not negatively impact circuit performance. However, the substitute must still meet or exceed all other electrical requirements (current, Rds On, temperature range) for the specific application.

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