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IXFA76N15T2 Equivalent & Substitute Parts
Part Overview
The IXFA76N15T2 is an N-Channel MOSFET manufactured by IXYS, rated for 150V drain-to-source voltage with a continuous drain current of 76A at 25°C. This device is part of the HiPerFET™ and TrenchT2™ series and is housed in a Surface Mount TO-263AA (D2PAK) package. The part is currently Active in product status with 900 pieces in stock inventory.
Equivalent and substitute parts are identified when alternative MOSFETs meet or exceed the electrical specifications and maintain compatible packaging, allowing for direct circuit board replacement without design modification. Substitutes are necessary when the primary part becomes unavailable, when supply chain optimization is required, or when design flexibility across multiple qualified sources is needed.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 76 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 20 | mOhm @ 38A, 10V |
| Gate Threshold Voltage Vgs(th) (Max) | 4.5 | V @ 250µA |
| Gate Charge (Qg) (Max) | 97 | nC @ 10V |
| Input Capacitance (Ciss) (Max) | 5800 | pF @ 25V |
| Power Dissipation (Max) | 350 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-263AA (D2PAK) | Surface Mount |
| Vgs (Max) | ±20 | V |
Substitute Part Grouping Explanation
Substitution eligibility for the IXFA76N15T2 is determined by the following critical electrical and mechanical parameters:
Voltage Rating: The substitute must maintain a Drain to Source Voltage (Vdss) rating of 150V or greater to ensure safe operation across all circuit conditions.
Current Rating: The substitute must support a continuous drain current (Id) of 76A or greater at 25°C to handle the design load without thermal stress.
On-State Resistance (Rds On): The substitute must maintain comparable or lower on-state resistance to ensure power dissipation and thermal performance remain within acceptable limits.
Gate Characteristics: Gate threshold voltage (Vgs(th)), gate charge (Qg), and input capacitance (Ciss) must be compatible with the gate drive circuit to ensure proper switching performance.
Package Compatibility: The substitute must use the TO-263 (D2PAK) package family to ensure mechanical and thermal compatibility with the printed circuit board layout.
Operating Temperature: The substitute must support the full operating temperature range of -55°C to 175°C (TJ).
Compliance: Both parts must maintain RoHS3 compliance and equivalent regulatory status.
Parameter Comparison
| Parameter | IXFA76N15T2 (Main Part) | SUM85N15-19-E3 (Substitute) | Compatibility |
|---|---|---|---|
| Manufacturer | IXYS | Vishay Siliconix | Different manufacturer |
| Drain to Source Voltage (Vdss) | 150V | 150V | Equivalent |
| Continuous Drain Current (Id) @ 25°C | 76A (Tc) | 85A (Tc) | Substitute exceeds requirement |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 38A, 10V | 19 mOhm @ 30A, 10V | Substitute has lower resistance |
| Gate Threshold Voltage Vgs(th) (Max) | 4.5V @ 250µA | 4V @ 250µA | Substitute has lower threshold |
| Gate Charge (Qg) (Max) | 97 nC @ 10V | 110 nC @ 10V | Substitute has higher gate charge |
| Input Capacitance (Ciss) (Max) | 5800 pF @ 25V | 4750 pF @ 25V | Substitute has lower capacitance |
| Power Dissipation (Max) | 350W (Tc) | 375W (Tc) | Substitute exceeds requirement |
| Operating Temperature Range | -55 to 175°C (TJ) | -55 to 175°C (TJ) | Equivalent |
| Package Type | TO-263AA (D2PAK) | TO-263 (D2PAK) | Compatible package family |
| Vgs (Max) | ±20V | ±20V | Equivalent |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Equivalent |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Equivalent |
| Product Status | Active | Active | Both actively manufactured |
Engineering Selection Recommendations
Primary Part (IXFA76N15T2): This part is the specified component and remains the first choice when available. It is Active in product status, RoHS3 compliant, and carries full design validation history. Current inventory of 900 pieces supports immediate procurement.
Substitute Part (SUM85N15-19-E3): The Vishay Siliconix SUM85N15-19-E3 qualifies as a direct substitute based on the following criteria:
Electrical specifications exceed or match the IXFA76N15T2 across all critical parameters. The 85A continuous drain current rating exceeds the 76A requirement, providing additional design margin. The 19 mOhm on-state resistance is lower than the 20 mOhm specification, resulting in reduced power dissipation and improved thermal performance. The 375W power dissipation rating exceeds the 350W requirement.
Both parts operate across the identical temperature range (-55°C to 175°C) and maintain the same maximum gate voltage (±20V). Both are RoHS3 compliant with MSL 1 rating and are currently Active in product status.
Package compatibility is confirmed through the TO-263 (D2PAK) family designation. Both parts use the same three-lead Surface Mount configuration with identical pinout and thermal tab placement, enabling direct board-level substitution without layout modification.
The substitute part carries higher gate charge (110 nC versus 97 nC) and lower input capacitance (4750 pF versus 5800 pF), which may require minor gate drive circuit verification but do not preclude substitution in standard switching applications.
Frequently Asked Questions (FAQ)
Q: Can the SUM85N15-19-E3 be used as a direct replacement for the IXFA76N15T2 on the printed circuit board?
A: Yes. Both parts use the TO-263 (D2PAK) package with identical pinout and thermal tab configuration. No PCB layout modification is required for mechanical or thermal compatibility.
Q: What are the key electrical differences between these two parts?
A: The SUM85N15-19-E3 provides higher continuous drain current (85A versus 76A), lower on-state resistance (19 mOhm versus 20 mOhm), and higher power dissipation capability (375W versus 350W). Gate charge is slightly higher (110 nC versus 97 nC), and input capacitance is lower (4750 pF versus 5800 pF).
Q: Will the higher gate charge of the substitute part affect circuit performance?
A: Gate charge differences of this magnitude (13 nC) are within typical design tolerances for standard gate drive circuits. The gate drive circuit must be verified to confirm it can supply the required gate current within the specified switching time window. This is a standard engineering validation step and does not inherently preclude substitution.
Q: Are both parts compliant with the same regulatory standards?
A: Yes. Both the IXFA76N15T2 and SUM85N15-19-E3 are RoHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, and are classified under ECCN EAR99 with identical HTSUS codes. Both are currently Active in product status.
Q: What is the difference between TO-263AA and TO-263 package designations?
A: Both designations refer to the same D2PAK (2 Leads + Tab) Surface Mount package family. The "AA" suffix in TO-263AA is a manufacturer-specific variant identifier used by IXYS. The physical dimensions, pinout, and thermal characteristics are compatible across the TO-263 family, enabling direct substitution.
Q: Under what conditions should the substitute part be selected over the primary part?
A: The substitute part should be selected when the primary part (IXFA76N15T2) is unavailable, when supply lead times exceed project requirements, or when design flexibility across multiple qualified sources is necessary. The substitute's superior electrical performance (higher current rating, lower on-state resistance) may also justify selection in applications where thermal margin or efficiency is critical.
Q: Is design re-qualification required when switching from the IXFA76N15T2 to the SUM85N15-19-E3?
A: Full design re-qualification is not required because the substitute part meets or exceeds all critical electrical specifications. However, gate drive circuit verification is recommended to confirm compatibility with the slightly higher gate charge specification. Thermal analysis should be updated to reflect the improved on-state resistance characteristics.
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