IXFA4N60P3 N-Channel 600V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFA4N60P3 is an N-Channel 600V 4A MOSFET manufactured by IXYS in the HiPerFET™ and Polar3™ series. This device is housed in a TO-263AA (D2PAK) surface mount package and is rated for 114W power dissipation at case temperature. The part is currently obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	4	A
On-State Resistance (Rds On) @ 2A, 10V	2.2	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	6.9	nC
Input Capacitance (Ciss) @ 25V	365	pF
Power Dissipation (Max)	114	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFA4N60P3 is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

Drain to Source Voltage (Vdss): 600V
Package Type: TO-263-3 (D2PAK) surface mount
Operating Temperature Range: -55°C to 150°C
Mounting Type: Surface Mount

Functional Compatibility Parameters:

Continuous Drain Current (Id): 4A or greater
On-State Resistance (Rds On): 2.2 Ohm or lower (at specified gate voltage and current)
Gate Threshold Voltage (Vgs(th)): Within ±1V of 5V
Maximum Gate Voltage (Vgs): ±30V or greater

Substitute parts must maintain electrical performance within the design envelope of the original IXFA4N60P3. Parts with higher current ratings, lower on-state resistance, or equivalent gate charge characteristics provide direct functional replacement. All substitute parts listed are N-Channel MOSFETs with identical voltage and package specifications.

Parameter Comparison

Parameter	IXFA4N60P3	IXFA10N60P	IRFBC30ASTRLPBF	IRFBC30SPBF	IRFBC30STRLPBF	STB4NK60ZT4
Manufacturer	IXYS	IXYS	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	STMicroelectronics
Vdss (V)	600	600	600	600	600	600
Id @ 25°C (A)	4	10	3.6	3.6	3.6	4
Rds On @ 10V (Ohm)	2.2 @ 2A	0.74 @ 5A	2.2 @ 2.2A	2.2 @ 2.2A	2.2 @ 2.2A	2 @ 2A
Vgs(th) (V)	5 @ 250µA	5.5 @ 1mA	4.5 @ 250µA	4 @ 250µA	4 @ 250µA	4.5 @ 50µA
Qg @ 10V (nC)	6.9	32	23	31	31	26
Ciss @ 25V (pF)	365	1610	510	660	660	510
Power Dissipation (W)	114	200	74	74	74	70
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263AA	TO-263AA	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IXFA10N60P

The IXFA10N60P is the manufacturer-recommended substitute from IXYS. This part maintains the same 600V voltage rating, TO-263AA package, and operating temperature range as the IXFA4N60P3. The IXFA10N60P offers superior electrical performance with 10A continuous drain current and 200W power dissipation, providing increased design margin. The part is in active production status with ROHS3 compliance and unlimited moisture sensitivity rating. Gate charge is higher at 32nC compared to 6.9nC, and input capacitance increases to 1610pF, which may affect switching speed in high-frequency applications.

Secondary Recommendations: IRFBC30STRLPBF, IRFBC30ASTRLPBF, IRFBC30SPBF

These Vishay Siliconix alternatives provide functional equivalence with identical 600V Vdss and TO-263 (D2PAK) package. All three variants maintain 3.6A continuous drain current and 2.2 Ohm on-state resistance at 10V. The IRFBC30STRLPBF is preferred among these options due to active product status, ROHS3 compliance, and highest inventory availability (24,675 units). Gate threshold voltage is lower at 4V compared to the original 5V specification. Gate charge ranges from 23nC to 31nC, and input capacitance ranges from 510pF to 660pF. These parts are suitable for applications where the 4A current rating of the original part is adequate.

Tertiary Recommendation: STB4NK60ZT4

The STMicroelectronics STB4NK60ZT4 provides direct current and voltage matching at 4A and 600V. This part features the SuperMESH™ technology platform with 70W power dissipation and 2 Ohm on-state resistance, offering improved thermal performance compared to the original. The part is in active production with ROHS3 compliance and REACH unaffected status. Gate charge is 26nC and input capacitance is 510pF, providing moderate switching characteristics between the IXFA4N60P3 and higher-current alternatives.

Compliance and Availability:

All recommended substitutes maintain ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. The IXFA10N60P and IRFBC30STRLPBF offer the highest inventory availability (1,173 and 24,675 units respectively), supporting production continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXFA10N60P directly replace the IXFA4N60P3 in existing designs?

A: The IXFA10N60P is electrically compatible as a direct replacement. Both parts share identical 600V voltage rating, TO-263AA package, and -55°C to 150°C operating temperature range. The higher 10A current rating and 200W power dissipation provide increased design margin. However, the higher gate charge (32nC vs. 6.9nC) and input capacitance (1610pF vs. 365pF) may affect gate drive circuit performance in high-frequency switching applications. Gate drive circuit verification is necessary for applications operating above 100kHz.

Q: What is the difference between IRFBC30STRLPBF, IRFBC30ASTRLPBF, and IRFBC30SPBF?

A: All three variants are Vishay Siliconix IRFBC30 base parts with identical electrical specifications: 600V, 3.6A, 2.2 Ohm Rds On, and TO-263 (D2PAK) package. The primary differences are packaging format and RoHS compliance. IRFBC30STRLPBF is supplied in Cut Tape (CT) format with ROHS3 compliance. IRFBC30ASTRLPBF is supplied in Cut Tape (CT) format with ROHS3 compliance. IRFBC30SPBF is supplied in Tube format with ROHS3 compliance. All three are functionally equivalent for circuit design purposes.

Q: Is the STB4NK60ZT4 suitable for high-frequency switching applications?

A: The STB4NK60ZT4 features 26nC gate charge and 510pF input capacitance, positioning it between the low-charge IXFA4N60P3 (6.9nC, 365pF) and higher-capacitance alternatives. The SuperMESH™ technology provides optimized switching characteristics for frequencies up to approximately 200kHz. For applications requiring switching frequencies above 200kHz, the original IXFA4N60P3 or IXFA10N60P with lower gate charge characteristics are preferred.

Q: Why is the IXFA4N60P3 obsolete, and what is the recommended migration path?

A: The IXFA4N60P3 is obsolete due to product line consolidation by IXYS. The IXFA10N60P is the direct manufacturer-recommended successor, offering improved performance specifications while maintaining package and voltage compatibility. For new designs or production transitions, the IXFA10N60P is the preferred path. For existing inventory management or cost-sensitive applications, the Vishay IRFBC30 series or STMicroelectronics STB4NK60ZT4 provide functional alternatives.

Q: Are all substitute parts RoHS compliant?

A: All recommended substitute parts are ROHS3 compliant. The IRFBC30STRL and IRFBC30STRR variants are RoHS non-compliant and are not recommended for new designs or applications requiring RoHS certification.

Q: What is the impact of different gate threshold voltages on circuit design?

A: The IXFA4N60P3 specifies Vgs(th) at 5V, while substitute parts range from 4V to 5.5V. Gate threshold voltage determines the minimum gate voltage required to initiate conduction. Lower threshold voltages (4V) allow operation with lower gate drive voltages, while higher thresholds (5.5V) require higher drive voltages for full conduction. Gate drive circuits must be verified to ensure adequate voltage margin above the specified threshold for reliable switching performance.

Q: Can the IRFBC30 series be used in applications requiring 4A continuous current?

A: The IRFBC30 series is rated for 3.6A continuous drain current, which is 10% below the IXFA4N60P3 specification of 4A. For applications requiring sustained 4A operation at elevated case temperatures, the IRFBC30 series may not provide adequate current margin. The IXFA10N60P or STB4NK60ZT4, both rated for 4A or higher, are more suitable for such applications.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use TO-263 (D2PAK) surface mount packages, which are mechanically and thermally compatible with the original IXFA4N60P3 TO-263AA package. PCB footprints are identical. Thermal performance depends on PCB copper area, via placement, and thermal interface design. The higher power dissipation of the IXFA10N60P (200W vs. 114W) may require enhanced thermal management in space-constrained designs.

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