IXFA4N100P N-Channel MOSFET 1000V 4A Equivalent & Substitute Parts

Part Overview

The IXFA4N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 4A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a Surface Mount TO-263AA (D2PAK) package. The part is currently Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified when alternative components share compatible electrical ratings and mechanical packaging specifications, enabling direct replacement in circuit applications where the primary part may be unavailable or require sourcing from alternative suppliers.

Substiute Parts

IXFA4N100P

IXYSIn Stock: 1079IXFA4N100P Datasheet

Current PartRFQ

IRFBF30STRLPBF

Vishay SiliconixIn Stock: 1854IRFBF30STRLPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFA4N100P are identified based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) rating must equal or exceed 1000V
• Continuous Drain Current (Id) rating must equal or exceed 4A at 25°C
• On-State Resistance (Rds On) must be within acceptable operating margins
• Gate Threshold Voltage (Vgs(th)) must be compatible with drive circuitry
• Power Dissipation capability must support thermal requirements
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Package type must be TO-263-3 or D2PAK (2 Leads + Tab) configuration
• Surface Mount mounting type required
• Pin configuration must support direct PCB layout compatibility

The IRFBF30STRLPBF is listed as a substitute part; however, it exhibits a reduced Vdss rating of 900V, which falls below the 1000V specification of the primary part. This substitution is valid only in applications where the actual operating voltage does not exceed 900V, and where the reduced current rating of 3.6A and lower power dissipation of 125W are acceptable for the circuit design.

Parameter Comparison

Engineering Selection Recommendations

Primary Part Selection (IXFA4N100P): The IXFA4N100P is the specified component for applications requiring the full 1000V Vdss rating. This part is Active in product status with established supply availability (1013 pcs in stock). Full RoHS3 compliance and unlimited MSL rating ensure compatibility with modern manufacturing and storage requirements. The HiPerFET™ series designation indicates optimized performance characteristics for high-voltage switching applications.

Substitute Part Selection (IRFBF30STRLPBF): The IRFBF30STRLPBF is an Active product from Vishay Siliconix with strong supply availability (1829 pcs in stock). This part is suitable for applications where the operating voltage does not exceed 900V. Both parts share identical operating temperature ranges (-55°C to 150°C), RoHS3 compliance status, and unlimited MSL ratings. The substitute part exhibits higher gate charge (78 nC vs. 26 nC), which may impact switching speed and gate drive requirements in high-frequency applications.

Compliance and Regulatory Alignment: Both parts carry RoHS3 compliance, REACH Unaffected status, and identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, ensuring regulatory equivalence for procurement and export purposes.

Frequently Asked Questions (FAQ)

Q: Can the IRFBF30STRLPBF directly replace the IXFA4N100P in all applications?

A: Direct replacement is valid only in applications where the maximum operating voltage does not exceed 900V. The IRFBF30STRLPBF has a reduced Vdss rating of 900V compared to the IXFA4N100P's 1000V specification. Additionally, the continuous drain current is reduced from 4A to 3.6A, and power dissipation capability is reduced from 150W to 125W. Circuit design must accommodate these reduced ratings.

Q: What is the significance of the higher gate charge in the IRFBF30STRLPBF?

A: The IRFBF30STRLPBF exhibits a gate charge (Qg) of 78 nC at 10V, compared to 26 nC for the IXFA4N100P. Higher gate charge requires greater charge delivery from the gate driver circuit, resulting in slower switching transitions and increased gate drive power consumption. This parameter is critical in high-frequency switching applications.

Q: Are the TO-263AA and TO-263 packages mechanically compatible?

A: Both packages are D2PAK (2 Leads + Tab) configurations with TO-263-3 pin assignments. The mechanical footprint and pin layout are compatible for PCB mounting. The IXFA4N100P uses the TO-263AA variant (IXFA designation), while the IRFBF30STRLPBF uses the standard TO-263 designation. Both support direct PCB placement without layout modification.

Q: What are the compliance and regulatory differences between these parts?

A: Both parts are RoHS3 compliant, REACH Unaffected, and share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Moisture Sensitivity Level is 1 (Unlimited) for both parts. No regulatory or compliance barriers exist for substitution from a compliance perspective.

Q: How do the on-state resistance specifications compare?

A: The IXFA4N100P specifies Rds On (Max) of 3.3 Ohm at 2A and 10V gate voltage. The IRFBF30STRLPBF specifies 3.7 Ohm at 2.2A and 10V gate voltage. The slightly higher resistance in the substitute part results in increased conduction losses and heat dissipation during operation.

Q: What is the gate threshold voltage difference, and does it affect circuit design?

A: The IXFA4N100P has a gate threshold voltage (Vgs(th)) of 5V at 250µA, while the IRFBF30STRLPBF is rated at 4V. The lower threshold voltage in the substitute part indicates easier gate turn-on characteristics. This difference is generally not problematic in standard gate drive circuits but should be verified in applications with marginal gate drive voltage supplies.

Q: Are both parts suitable for the same operating temperature range?

A: Yes. Both the IXFA4N100P and IRFBF30STRLPBF operate across the identical temperature range of -55°C to 150°C (TJ). No thermal performance differentiation exists between the parts in this specification.