IXFA3N80 N-Channel MOSFET 800V 3.6A Equivalent & Substitute Parts

Part Overview

The IXFA3N80 is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with a continuous drain current of 3.6A at 25°C. The device is housed in a TO-263AA (D2PAK) surface mount package and dissipates up to 100W at the case temperature. This part operates within the HiPerFET™ series and is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity.

The obsolete status of the IXFA3N80 requires engineers to identify functionally compatible alternatives that maintain electrical performance within the application's design parameters while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	3.6	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	3.6	Ohm @ 500mA, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 1mA
Gate Charge (Qg Max) @ Vgs	24	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	685	pF @ 25V
Power Dissipation (Max)	100	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFA3N80 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must meet or exceed 3.6A at 25°C
On-State Resistance (Rds On): Must not exceed the maximum specified value to ensure thermal performance
Gate Threshold Voltage (Vgs(th)): Must fall within compatible operating range
Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Package Type: TO-263-3 or D2PAK (2 Leads + Tab) surface mount configuration
Pin configuration and footprint compatibility

Compliance Criteria:

RoHS3 compliance status
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

The substitute parts identified below meet these criteria while offering improved or equivalent electrical performance characteristics.

Parameter Comparison

Parameter	IXFA3N80	IRFBE30SPBF	IRFBE30STRL	IRFBE30STRR
Manufacturer	IXYS	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Drain-to-Source Voltage (Vdss)	800V	800V	800V	800V
Continuous Drain Current (Id) @ 25°C	3.6A	4.1A	4.1A	4.1A
On-State Resistance (Rds On Max) @ Id, Vgs	3.6Ω @ 500mA, 10V	3Ω @ 2.5A, 10V	3Ω @ 2.5A, 10V	3Ω @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5V @ 1mA	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg Max) @ Vgs	24nC @ 10V	78nC @ 10V	78nC @ 10V	78nC @ 10V
Input Capacitance (Ciss Max) @ Vds	685pF @ 25V	1300pF @ 25V	1300pF @ 25V	1300pF @ 25V
Power Dissipation (Max)	100W	125W	125W	125W
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
Package Type	TO-263AA (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Non-Compliant	RoHS Non-Compliant

Engineering Selection Recommendations

IRFBE30SPBF is the primary recommended substitute for the IXFA3N80. This part is manufactured by Vishay Siliconix and maintains active product status, ensuring long-term availability and manufacturing support. The IRFBE30SPBF exceeds the electrical requirements of the IXFA3N80 across all critical parameters: it provides 4.1A continuous drain current (versus 3.6A), improved on-state resistance of 3Ω (versus 3.6Ω), and increased power dissipation capability of 125W (versus 100W). The device is housed in the TO-263 (D2PAK) package, which is mechanically and electrically compatible with the original TO-263AA footprint. Critically, the IRFBE30SPBF maintains ROHS3 compliance, matching the regulatory status of the original part.

IRFBE30STRL and IRFBE30STRR are functionally equivalent alternatives that provide identical electrical performance to the IRFBE30SPBF. Both devices are active products from Vishay Siliconix with the same 800V/4.1A rating and TO-263 (D2PAK) package configuration. However, both parts are classified as RoHS non-compliant, which may restrict their use in applications subject to RoHS3 regulatory requirements. These alternatives are suitable only for applications where RoHS compliance is not mandated.

For new designs and production environments requiring regulatory compliance, the IRFBE30SPBF is the optimal selection. For legacy systems or applications without RoHS requirements, IRFBE30STRL and IRFBE30STRR provide cost-effective alternatives with superior electrical performance.

Frequently Asked Questions (FAQ)

Q: Can the IRFBE30SPBF directly replace the IXFA3N80 in existing PCB designs?

A: Yes. Both devices use the TO-263 (D2PAK) surface mount package with identical pin configuration (2 leads + tab). The footprint and pinout are mechanically compatible, allowing direct substitution without PCB redesign.

Q: What are the key electrical differences between the IXFA3N80 and IRFBE30SPBF?

A: The IRFBE30SPBF provides superior performance across multiple parameters. It delivers 4.1A continuous drain current compared to 3.6A, features lower on-state resistance (3Ω versus 3.6Ω), and supports higher power dissipation (125W versus 100W). Gate charge is higher at 78nC versus 24nC, and input capacitance is increased to 1300pF versus 685pF. These differences result in improved thermal performance and current handling capability.

Q: Why is the IXFA3N80 classified as obsolete?

A: The IXFA3N80 is an older generation device from the IXYS HiPerFET™ series. Obsolescence reflects discontinuation of manufacturing and end-of-life status. Vishay Siliconix's IRFBE30 series represents the current generation of 800V N-Channel MOSFETs with enhanced performance characteristics and active production support.

Q: Are there compliance differences between the substitute options?

A: Yes. The IRFBE30SPBF is ROHS3 compliant, matching the original IXFA3N80. The IRFBE30STRL and IRFBE30STRR variants are RoHS non-compliant. Selection depends on regulatory requirements of the target application and end market.

Q: What is the significance of the higher gate charge in the IRFBE30 series?

A: The IRFBE30 series exhibits higher gate charge (78nC versus 24nC) due to larger die size and improved current handling capability. This requires slightly higher gate drive current but does not affect functional compatibility. Gate drive circuits must be verified to supply adequate current for the higher gate charge specification.

Q: Can IRFBE30STRL or IRFBE30STRR be used in RoHS-compliant applications?

A: No. Applications subject to RoHS3 regulatory requirements must use IRFBE30SPBF, which carries ROHS3 compliance certification. IRFBE30STRL and IRFBE30STRR are not suitable for RoHS-regulated markets or end-use applications.

Q: What is the impact of increased input capacitance on circuit performance?

A: The IRFBE30 series input capacitance of 1300pF (versus 685pF in the IXFA3N80) affects gate drive timing and switching characteristics. Applications with high-frequency switching or tight timing requirements should evaluate gate drive circuit performance with the higher capacitance value. Standard gate drive circuits typically accommodate this increase without modification.

Q: Are the IRFBE30 variants interchangeable with each other?

A: IRFBE30SPBF, IRFBE30STRL, and IRFBE30STRR are electrically and mechanically identical. The primary distinction is packaging format and RoHS compliance status. Selection between variants depends on supply chain availability, regulatory requirements, and packaging specifications (tube versus reel).

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