IXFA30N60X N-Channel 600V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFA30N60X is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 30A continuous drain current at 25°C. This device is part of the HiPerFET™ Ultra X series and is housed in a TO-263AA surface mount package. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the TO-263-3 D2PAK package family and preserve critical electrical characteristics within acceptable operating parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	30	A
On-State Resistance (Rds On) @ 15A, 10V	155	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	56	nC
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ 25V	2270	pF
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 D2PAK	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFA30N60X is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Package Type: Must be TO-263-3 D2PAK or compatible variant
Mounting Type: Surface mount configuration required
Operating Temperature Range: Must support -55°C to 150°C minimum
Continuous Drain Current (Id): Must support minimum 30A at 25°C for direct replacement; lower current ratings acceptable for current-limited applications
On-State Resistance (Rds On): Lower values preferred; higher values acceptable if thermal management is verified
Gate Voltage Compatibility (Vgs): Must support ±20V minimum; ±30V preferred for full compatibility

Secondary Compatibility Parameters:

Gate Charge (Qg): Affects switching speed; values between 40–106 nC acceptable
Input Capacitance (Ciss): Affects gate drive requirements; range 1400–2322 pF acceptable
Power Dissipation Rating: Minimum 139W required; higher ratings provide thermal margin

Substitute parts are grouped by current rating capability and thermal performance. Parts rated 20A–24A continuous current are suitable for applications where the full 30A rating is not required. Parts with higher power dissipation ratings (200W+) are preferred for high-frequency switching applications.

Parameter Comparison

Parameter	IXFA30N60X	IPB60R199CPATMA1	R6020KNJTL	R6024KNJTL	SIHB21N65EF-GE3	SIHB22N60ET1-GE3
Vdss (V)	600	600	600	600	650	600
Id @ 25°C (A)	30	16	20	24	21	21
Rds On @ 10V (mOhm)	155	199	196	165	180	180
Vgs(th) (V)	4.5	3.5	5	5	4	4
Qg @ 10V (nC)	56	43	40	45	106	86
Vgs Max (V)	±30	±20	±20	±20	±30	±30
Ciss @ 25V or 100V (pF)	2270 @ 25V	1520 @ 100V	1550 @ 25V	2000 @ 25V	2322 @ 100V	1920 @ 100V
Power Dissipation (W)	500	139	231	245	208	227
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263AA	PG-TO263-3-2	LPTS	LPTS	TO-263 D2PAK	TO-263 D2PAK
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Current Replacement (30A Capability): No single substitute part from the provided list maintains the full 30A continuous drain current rating of the IXFA30N60X. The IXFA30N60X is a high-current device with 500W power dissipation; substitute parts in this analysis are rated 16A–24A continuous current.

For Current-Limited Applications (20A–24A): The following parts are recommended based on active product status and full compliance certifications:

R6020KNJTL (Rohm Semiconductor): 20A, 600V, 231W dissipation, active status, ROHS3 compliant, full temperature range support (-55°C to 150°C)
R6024KNJTL (Rohm Semiconductor): 24A, 600V, 245W dissipation, active status, ROHS3 compliant, full temperature range support (-55°C to 150°C)
SIHB22N60ET1-GE3 (Vishay Siliconix): 21A, 600V, 227W dissipation, active status, ROHS3 compliant, full temperature range support (-55°C to 150°C)

For Applications Requiring Higher Voltage Margin:

SIHB21N65EF-GE3 (Vishay Siliconix): 21A, 650V, 208W dissipation, active status, ROHS3 compliant, full temperature range support (-55°C to 150°C)

Parts Not Recommended for New Designs:

IPB60R199CPATMA1 (Infineon Technologies): Marked "Not For New Designs"; lower current rating (16A) and reduced power dissipation (139W) limit applicability

Compliance Verification: All recommended substitute parts maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification consistent with the original IXFA30N60X. All parts support the full operating temperature range of -55°C to 150°C.

Frequently Asked Questions (FAQ)

Q: Can the IXFA30N60X be replaced with a lower-current-rated MOSFET?

A: Yes, if the application does not require the full 30A continuous current capability. Substitute parts rated 20A–24A are suitable for current-limited applications. System-level thermal analysis must confirm that power dissipation remains within acceptable limits at the reduced current level.

Q: What is the significance of the TO-263-3 D2PAK package compatibility?

A: The TO-263-3 D2PAK package is a three-terminal surface mount package (drain, gate, source) with a metal tab for thermal management. All substitute parts listed use this package family, ensuring mechanical and thermal compatibility with existing PCB layouts and heat sink designs. Variations such as TO-263AA, PG-TO263-3-2, and LPTS are functionally equivalent within the D2PAK family.

Q: Why is the IXFA30N60X classified as obsolete?

A: The IXFA30N60X is part of the HiPerFET™ Ultra X series, which has been superseded by newer MOSFET generations. Obsolete status indicates that the manufacturer no longer produces this part. Substitute parts from active product lines (Rohm R6020/R6024 series, Vishay SIHB series) provide equivalent functionality with ongoing manufacturer support.

Q: Are there differences in gate drive requirements between the IXFA30N60X and substitute parts?

A: Yes. The IXFA30N60X has a gate threshold voltage (Vgs(th)) of 4.5V and gate charge (Qg) of 56 nC. Substitute parts vary: R6020KNJTL has Vgs(th) of 5V and Qg of 40 nC; SIHB22N60ET1-GE3 has Vgs(th) of 4V and Qg of 86 nC. These differences affect switching speed and gate drive circuit design. Gate drive circuits must be verified to accommodate the substitute part's specifications.

Q: What is the impact of on-state resistance (Rds On) differences?

A: The IXFA30N60X has Rds On of 155 mOhm at 15A, 10V. Substitute parts range from 165–199 mOhm. Higher Rds On values result in increased conduction losses and heat generation. For applications operating at or near the substitute part's maximum current rating, thermal management must account for the increased power dissipation. Lower Rds On values (e.g., R6024KNJTL at 165 mOhm) are preferred.

Q: Can the SIHB21N65EF-GE3 (650V) be used in place of the IXFA30N60X (600V)?

A: Yes. The SIHB21N65EF-GE3 has a higher voltage rating (650V vs. 600V), which provides additional voltage margin and is fully compatible with 600V applications. No circuit modifications are required. The higher voltage rating does not degrade performance in 600V systems.

Q: What is the difference between active and obsolete product status?

A: Active parts are currently manufactured and supported by the supplier, with guaranteed availability and technical support. Obsolete parts are no longer produced; existing inventory may be available through distributors, but long-term supply cannot be assured. For new designs or production continuity, active substitute parts (R6020KNJTL, R6024KNJTL, SIHB22N60ET1-GE3) are strongly preferred.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are ROHS3 compliant and REACH unaffected, matching the compliance status of the original IXFA30N60X. No additional compliance verification is required for regulatory purposes.

Q: How should thermal management be adjusted when using a substitute part with lower power dissipation rating?

A: Substitute parts with lower power dissipation ratings (e.g., IPB60R199CPATMA1 at 139W vs. IXFA30N60X at 500W) require careful thermal analysis. If the application operates at the substitute part's maximum current rating, the junction temperature may exceed acceptable limits without adequate heat sinking. Thermal simulations or empirical testing must confirm that junction temperature remains within the -55°C to 150°C operating range under worst-case conditions.

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