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IXFA16N60P3 N-Channel 600V 16A MOSFET Equivalent & Substitute Parts
Part Overview
The IXFA16N60P3 is an N-Channel 600V 16A MOSFET manufactured by IXYS in the HiPerFET™ and Polar3™ series. This surface mount device is housed in a TO-263AA (D2PAK) package and is designed for high-current switching applications requiring 600V drain-to-source voltage capability. The part is Active status and RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Equivalent and substitute parts are identified when design requirements change, when the primary part becomes unavailable, or when alternative manufacturers' components meet the electrical and mechanical specifications of the application. Substitution must maintain compatibility across drain-to-source voltage, continuous drain current, gate charge characteristics, and package form factor.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 600 | V |
| Continuous Drain Current (Id) @ 25°C | 16 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 440 | mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36 | nC @ 10V |
| Vgs(th) (Max) @ Id | 5 | V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1830 | pF @ 25V |
| Power Dissipation (Max) | 347 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab) | - |
| Mounting Type | Surface Mount | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the IXFA16N60P3 is determined by the following critical parameters:
Voltage Rating (Vdss): The drain-to-source voltage must equal or exceed 600V. Parts rated at 650V or 800V are acceptable as they provide higher voltage margin.
Continuous Drain Current (Id): The substitute part must support a continuous drain current at or above 16A at 25°C case temperature. Lower current ratings reduce design margin and are not suitable substitutes.
Gate Charge (Qg): Gate charge affects switching speed and driver requirements. Substitute parts with significantly different gate charge values may require driver circuit adjustments.
On-State Resistance (Rds On): The on-state resistance at specified gate voltage and drain current determines conduction losses. Comparable or lower Rds On values maintain thermal performance.
Package Compatibility: All substitute parts must use the TO-263-3 (D2PAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.
Operating Temperature: The substitute must support the full operating temperature range of -55°C to 150°C (TJ) or the specific range required by the application.
The following substitute parts meet these criteria based on the provided electrical and mechanical parameters.
Parameter Comparison
| Parameter | IXFA16N60P3 | R6007KNJTL | R6012FNJTL | STB11N65M5 | STB13NK60ZT4 | STB14N80K5 | STB8N65M5 |
|---|---|---|---|---|---|---|---|
| Manufacturer | IXYS | Rohm Semiconductor | Rohm Semiconductor | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vdss (V) | 600 | 600 | 600 | 650 | 600 | 800 | 650 |
| Id @ 25°C (A) | 16 | 7 | 12 | 9 | 13 | 12 | 7 |
| Rds On (mOhm) | 440 @ 8A, 10V | 620 @ 2.4A, 10V | 510 @ 6A, 10V | 480 @ 4.5A, 10V | 550 @ 4.5A, 10V | 445 @ 6A, 10V | 600 @ 3.5A, 10V |
| Qg (nC @ 10V) | 36 | 14.5 | 35 | 17 | 92 | 22 | 15 |
| Ciss (pF) | 1830 @ 25V | 470 @ 25V | 1300 @ 25V | 644 @ 100V | 2030 @ 25V | 620 @ 100V | 690 @ 100V |
| Power Dissipation (W) | 347 | 78 | 50 | 85 | 150 | 130 | 70 |
| Operating Temp (°C) | -55 to 150 | -55 to 150 | 150 | 150 | -55 to 150 | -55 to 150 | 150 |
| Package | TO-263AA (D2PAK) | LPTS (D2PAK) | LPTS (D2PAK) | TO-263 (D2PAK) | D2PAK | TO-263 (D2PAK) | TO-263 (D2PAK) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Direct Current Substitutes (16A Capability):
STB13NK60ZT4 (STMicroelectronics) provides the closest electrical match to the IXFA16N60P3 with 13A continuous drain current at 600V. This part maintains the same voltage rating and supports the full operating temperature range (-55°C to 150°C). The higher gate charge (92 nC) requires verification of driver circuit capability but does not preclude substitution. RoHS3 compliance and MSL 1 rating match the primary part.
STB14N80K5 (STMicroelectronics) offers 12A continuous drain current at 800V, providing higher voltage margin. The lower gate charge (22 nC) and comparable on-state resistance (445 mOhm) support faster switching. Full temperature range support and RoHS3 compliance are confirmed.
Reduced Current Substitutes (Below 16A):
R6012FNJTL (Rohm Semiconductor) provides 12A continuous drain current at 600V with gate charge of 35 nC, closely matching the primary part's switching characteristics. However, the operating temperature specification lists only 150°C maximum without the lower -55°C limit. This part is suitable only for applications not requiring the full temperature range.
R6007KNJTL (Rohm Semiconductor) and STB8N65M5 (STMicroelectronics) both provide 7A continuous drain current, representing a 56% reduction from the IXFA16N60P3 specification. These parts are suitable only for applications with reduced current requirements.
STB11N65M5 (STMicroelectronics) provides 9A continuous drain current at 650V with low gate charge (17 nC). The operating temperature specification lists only 150°C maximum. This part is suitable for reduced-current applications within the specified temperature limit.
Compliance and Regulatory Status:
All substitute parts listed are Active status, RoHS3 compliant, and carry MSL 1 (Unlimited) moisture sensitivity level, matching the primary part's regulatory and environmental qualifications. REACH status is Unaffected for all parts. ECCN classification is EAR99 for all parts.
Frequently Asked Questions (FAQ)
Q: Can R6007KNJTL replace IXFA16N60P3 in a 16A application?
A: No. R6007KNJTL is rated for 7A continuous drain current, which is 56% below the IXFA16N60P3 specification of 16A. This part is suitable only for applications with reduced current requirements. Exceeding the rated current will result in thermal failure.
Q: What is the primary difference between STB13NK60ZT4 and IXFA16N60P3?
A: STB13NK60ZT4 provides 13A continuous drain current compared to 16A for the IXFA16N60P3, representing an 81% current capability match. The gate charge is significantly higher (92 nC versus 36 nC), which may require driver circuit verification. Both parts operate at 600V and support the full -55°C to 150°C temperature range.
Q: Are all substitute parts in the same package?
A: Yes. All substitute parts use the TO-263-3 (D2PAK) surface mount package with 2 leads plus tab configuration. This ensures mechanical and thermal compatibility with existing PCB layouts designed for the IXFA16N60P3.
Q: Does STB14N80K5 provide better performance than IXFA16N60P3?
A: STB14N80K5 offers higher voltage rating (800V versus 600V) and lower gate charge (22 nC versus 36 nC), enabling faster switching. However, the continuous drain current is 12A versus 16A, representing a 75% capability match. Selection depends on whether the application prioritizes voltage margin and switching speed or requires the full 16A current capability.
Q: Can I use R6012FNJTL if my application operates only at room temperature?
A: R6012FNJTL is rated for 12A continuous drain current at 600V with gate charge of 35 nC, closely matching the IXFA16N60P3 switching characteristics. However, the operating temperature specification lists only 150°C maximum without the lower -55°C limit. This part is suitable only for applications that do not require operation below 0°C or that can tolerate the reduced temperature range.
Q: What is the significance of gate charge differences between substitute parts?
A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. Higher gate charge requires more driver current or longer switching times. IXFA16N60P3 has 36 nC gate charge. STB13NK60ZT4 has 92 nC (2.6× higher), requiring verification that the gate driver can supply sufficient current. STB14N80K5 has 22 nC (39% lower), enabling faster switching with reduced driver stress.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level and REACH Unaffected status, matching the regulatory qualifications of the IXFA16N60P3.
Q: Which substitute part has the lowest on-state resistance?
A: STB14N80K5 has 445 mOhm on-state resistance at 6A and 10V gate voltage, compared to 440 mOhm for IXFA16N60P3 at 8A and 10V. The comparison is approximate due to different measurement conditions. STB13NK60ZT4 has 550 mOhm, and R6012FNJTL has 510 mOhm. Lower on-state resistance reduces conduction losses and heat generation.
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