IXFA16N50P Equivalent & Substitute Parts

Part Overview

The IXFA16N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 16A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-263AA surface mount package. The part is Active status and RoHS3 compliant, making it suitable for high-voltage switching applications requiring robust thermal performance up to 300W.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters: drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), and compatible surface mount packaging. Substitutes must maintain functional compatibility within the application's voltage and current requirements.

Substiute Parts

IXFA16N50P

IXYSIn Stock: 960IXFA16N50P Datasheet

Current PartRFQ

R5016FNJTL

Rohm SemiconductorIn Stock: 1715R5016FNJTL Datasheet

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STB14NM50N

STMicroelectronicsIn Stock: 2254STB14NM50N Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFA16N50P is determined by the following critical parameters:

Primary Matching Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id): Must equal or exceed 16A at 25°C
• On-State Resistance (Rds On): Lower or equal values indicate improved performance
• Surface Mount Packaging: Must be compatible with TO-263 family (D2PAK, TO-263AA, TO-263AB)
• FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

• Gate Charge (Qg): Lower values reduce switching losses
• Power Dissipation Rating: Must support thermal requirements of the application
• Operating Temperature Range: Must cover application operating conditions
• RoHS3 Compliance: Required for regulatory alignment

The identified substitute parts meet the primary matching criteria with variations in secondary parameters that reflect different design optimizations and thermal capabilities.

Parameter Comparison

Engineering Selection Recommendations

R5016FNJTL (Rohm Semiconductor): This substitute maintains electrical equivalence with the IXFA16N50P across all primary parameters. Both devices support 500V Vdss and 16A continuous drain current. The R5016FNJTL exhibits lower on-state resistance (325mOhm versus 400mOhm), resulting in reduced conduction losses. Power dissipation is rated at 255W, which is lower than the main part but remains suitable for applications within this thermal envelope. The device is RoHS3 compliant and Active status. Package compatibility exists within the TO-263 family (LPTS variant). This substitute is appropriate for applications where the lower power dissipation rating is acceptable.

STB14NM50N (STMicroelectronics): This substitute operates at the same 500V Vdss rating but with reduced continuous drain current (12A versus 16A). The STB14NM50N is suitable only for applications requiring 12A or less continuous current. The device demonstrates superior gate charge characteristics (27nC versus 43nC), indicating lower switching losses. On-state resistance is comparable (320mOhm at 6A). Power dissipation is significantly lower at 90W, limiting thermal capability. The device is RoHS3 compliant and Active status. This substitute is appropriate for lower-current applications or where switching speed optimization is prioritized over current capacity.

All substitute parts maintain RoHS3 compliance, Active product status, and surface mount compatibility, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the R5016FNJTL directly replace the IXFA16N50P in all applications?

A: The R5016FNJTL is electrically equivalent for applications requiring 500V and 16A continuous drain current. Both devices share identical Vdss and Id ratings. The R5016FNJTL exhibits lower on-state resistance (325mOhm versus 400mOhm), which reduces conduction losses. However, the power dissipation rating is lower (255W versus 300W). Substitution is valid when the application's thermal requirements do not exceed 255W.

Q: Is the STB14NM50N a suitable substitute for the IXFA16N50P?

A: The STB14NM50N is a partial substitute. It maintains the 500V Vdss rating but operates at 12A continuous drain current, compared to 16A for the IXFA16N50P. This substitute is appropriate only for applications requiring 12A or less. The device offers superior switching characteristics (27nC gate charge) and lower power dissipation (90W). Substitution requires confirmation that the application current requirement does not exceed 12A.

Q: What are the key differences in packaging between these devices?

A: All three devices are surface mount N-Channel MOSFETs in the TO-263 family. The IXFA16N50P uses TO-263AA (IXFA) packaging, the R5016FNJTL uses LPTS packaging, and the STB14NM50N uses D2PAK packaging. All variants are compatible with TO-263 footprints and mounting procedures. PCB layout considerations remain consistent across these package types.

Q: How do on-state resistance values affect device selection?

A: On-state resistance (Rds On) directly impacts conduction losses and heat generation. Lower Rds On values reduce power dissipation during continuous operation. The R5016FNJTL (325mOhm) and STB14NM50N (320mOhm) both exhibit lower Rds On than the IXFA16N50P (400mOhm). In high-current or continuous-operation applications, lower Rds On values improve efficiency and reduce thermal stress.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFA16N50P, R5016FNJTL, and STB14NM50N are all RoHS3 compliant. All devices are also REACH unaffected and classified as EAR99 for export control purposes.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver circuit requirements. The STB14NM50N has the lowest gate charge (27nC), enabling faster switching transitions and lower switching losses. The IXFA16N50P (43nC) and R5016FNJTL (46nC) have higher gate charge values, requiring slightly more energy to switch but offering stable operation in various circuit topologies.

Q: Can these devices operate across the full temperature range of the IXFA16N50P?

A: The IXFA16N50P operates from -55°C to 150°C. The R5016FNJTL and STB14NM50N are specified to 150°C maximum junction temperature. Applications requiring operation below 0°C must use the IXFA16N50P, as the substitute parts lack low-temperature specifications.