IXFA14N60P3 N-Channel MOSFET 600V 14A Equivalent & Substitute Parts

Part Overview

The IXFA14N60P3 is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 14A continuous drain current at 25°C. This device is housed in a TO-263AA (D2PAK) surface mount package and belongs to the HiPerFET™ Polar3™ series. The part is classified as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Active alternatives with comparable electrical characteristics and identical packaging are available from IXYS and other manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	14	A
On-State Resistance (Rds On) @ 7A, 10V	540	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	5	V
Gate Charge (Qg) @ 10V	25	nC
Input Capacitance (Ciss) @ 25V	1480	pF
Power Dissipation (Max)	327	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263AA (D2PAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFA14N60P3 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 600V
Continuous Drain Current (Id) must be equal to or greater than 14A at 25°C
On-State Resistance (Rds On) must not exceed the original specification to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuitry
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Package type must be TO-263AA (D2PAK) or equivalent surface mount configuration
Mounting type must be surface mount
Pin configuration must match TO-263-3 standard

Regulatory Compliance:

RoHS3 compliance required
REACH unaffected status required

Substitute parts are grouped into two categories: direct IXYS HiPerFET™ series replacements with identical packaging, and cross-manufacturer alternatives from Rohm Semiconductor and Vishay Siliconix that meet electrical and mechanical requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IXFA14N60P3	IXYS	600	14	540 @ 7A	5 @ 1mA	25 @ 10V	1480 @ 25V	327	TO-263AA	Obsolete
IXFA14N60P	IXYS	600	14	550 @ 7A	5.5 @ 2.5mA	36 @ 10V	2500 @ 25V	300	TO-263AA	Active
IXFA12N65X2	IXYS	650	12	310 @ 6A	5 @ 250µA	18.5 @ 10V	1134 @ 25V	180	TO-263AA	Active
IXFA16N60P3	IXYS	600	16	440 @ 8A	5 @ 1.5mA	36 @ 10V	1830 @ 25V	347	TO-263AA	Active
R6009ENJTL	Rohm Semiconductor	600	9	535 @ 2.8A	4 @ 1mA	23 @ 10V	430 @ 25V	40	TO-263-3	Active
R6009KNJTL	Rohm Semiconductor	600	9	535 @ 2.8A	5 @ 1mA	16.5 @ 10V	540 @ 25V	94	TO-263-3	Active
R6012FNJTL	Rohm Semiconductor	600	12	510 @ 6A	5 @ 1mA	35 @ 10V	1300 @ 25V	50	TO-263-3	Active
R6007KNJTL	Rohm Semiconductor	600	7	620 @ 2.4A	5 @ 1mA	14.5 @ 10V	470 @ 25V	78	TO-263-3	Active
SIHD6N65ET1-GE3	Vishay Siliconix	650	7	600 @ 3A	4 @ 250µA	48 @ 10V	820 @ 100V	78	TO-252AA	Active
SIHD6N65ET4-GE3	Vishay Siliconix	650	7	600 @ 3A	4 @ 250µA	48 @ 10V	820 @ 100V	78	TO-252AA	Active
SIHD6N65ET5-GE3	Vishay Siliconix	650	7	600 @ 3A	4 @ 250µA	48 @ 10V	820 @ 100V	78	TO-252AA	Active

Engineering Selection Recommendations

Direct Replacement (Same Electrical Rating and Package):

The IXFA14N60P is the primary direct replacement for the IXFA14N60P3. Both devices share identical voltage and current ratings (600V, 14A), the same TO-263AA package, and are part of the IXYS HiPerFET™ series. The IXFA14N60P is currently in active production status, ensuring long-term availability. On-state resistance is marginally higher (550 mOhm vs. 540 mOhm), and power dissipation is slightly lower (300W vs. 327W), making this substitution suitable for applications where the original specifications are not exceeded.

Higher Current Rating Alternative:

The IXFA16N60P3 provides increased current capacity (16A vs. 14A) while maintaining the 600V voltage rating and TO-263AA package. This device offers improved on-state resistance (440 mOhm vs. 540 mOhm) and higher power dissipation capability (347W vs. 327W). This part is recommended for applications requiring additional current margin or thermal headroom. The IXFA16N60P3 is in active production status.

Higher Voltage Rating Alternative:

The IXFA12N65X2 provides a higher voltage rating (650V vs. 600V) with reduced current capacity (12A vs. 14A). This device features significantly lower on-state resistance (310 mOhm vs. 540 mOhm) and is suitable for applications where voltage margin is prioritized over current capacity. The IXFA12N65X2 is in active production status and part of the IXYS Ultra X2 series.

Cross-Manufacturer Alternatives:

Rohm Semiconductor LPTS package devices (R6009KNJTL, R6012FNJTL) and Vishay Siliconix TO-252AA package devices (SIHD6N65ET series) meet the 600V voltage requirement but have reduced current ratings (7A to 12A). These alternatives are suitable only for applications where the required drain current does not exceed the device rating. All cross-manufacturer alternatives are in active production status and RoHS3 compliant.

Compliance and Availability:

All recommended substitutes maintain RoHS3 compliance and REACH unaffected status. All substitute parts are currently in active production, ensuring procurement reliability and long-term availability compared to the obsolete IXFA14N60P3.

Frequently Asked Questions (FAQ)

Q: Can the IXFA14N60P directly replace the IXFA14N60P3 in existing designs?

A: Yes. The IXFA14N60P is a direct replacement with identical voltage (600V) and current (14A) ratings, the same TO-263AA package, and compatible pin configuration. Both devices operate across the same temperature range (-55°C to 150°C). The marginal differences in on-state resistance and gate charge are within acceptable tolerances for most applications.

Q: What is the difference between the IXFA14N60P and IXFA14N60P3?

A: Both devices share the same electrical ratings and package. The IXFA14N60P3 belongs to the Polar3™ series, while the IXFA14N60P belongs to the Polar series. The IXFA14N60P3 is obsolete; the IXFA14N60P is in active production. The IXFA14N60P has slightly higher on-state resistance (550 mOhm vs. 540 mOhm) and lower power dissipation (300W vs. 327W).

Q: Can I use the IXFA16N60P3 as a substitute if my application requires 14A?

A: Yes. The IXFA16N60P3 is rated for 16A continuous drain current, exceeding the 14A requirement of the IXFA14N60P3. It maintains the same 600V voltage rating and TO-263AA package. The improved on-state resistance (440 mOhm vs. 540 mOhm) provides better thermal performance. This substitution is suitable for applications where the original current specification is not exceeded.

Q: Why would I choose the IXFA12N65X2 over the IXFA14N60P?

A: The IXFA12N65X2 is selected when higher voltage margin is required (650V vs. 600V). However, it is rated for only 12A continuous drain current, making it unsuitable for applications requiring the full 14A of the original device. The significantly lower on-state resistance (310 mOhm vs. 540 mOhm) reduces power dissipation and heat generation. This substitution is appropriate only for applications where drain current does not exceed 12A.

Q: Are Rohm Semiconductor and Vishay Siliconix alternatives pin-compatible with the IXFA14N60P3?

A: Rohm Semiconductor LPTS package devices and Vishay Siliconix TO-252AA package devices are not pin-compatible with the IXFA14N60P3 TO-263AA package. These alternatives require PCB layout modifications and are suitable only for new designs or redesigns. They are not recommended for direct board-level substitution without circuit board changes.

Q: What is the significance of the TO-263AA package designation?

A: The TO-263AA package is a surface mount D2PAK configuration with three leads (two signal leads plus one tab for thermal connection). This package provides superior thermal performance compared to smaller packages. All IXYS HiPerFET™ substitutes maintain this package type, ensuring thermal compatibility and PCB layout compatibility without modification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts are RoHS3 compliant and REACH unaffected. This ensures regulatory compliance for applications subject to environmental and hazardous substance restrictions.

Q: What is the difference between R6009ENJTL and R6009KNJTL?

A: Both devices are rated for 600V and 9A continuous drain current. The primary differences are in power dissipation (40W vs. 94W) and gate charge (23 nC vs. 16.5 nC). The R6009KNJTL has lower gate charge, resulting in faster switching characteristics. Both are in active production status. Neither is suitable as a direct replacement for the IXFA14N60P3 due to reduced current rating.

Q: Can I use multiple lower-rated devices in parallel to achieve 14A capacity?

A: Parallel operation of MOSFETs is not addressed in the provided electrical parameters and is outside the scope of this substitution guide. Parallel MOSFET configurations require additional design considerations including gate drive matching, current sharing networks, and thermal management analysis.

Q: What inventory status should I consider when selecting a substitute?

A: All recommended substitute parts are currently in active production status with available inventory. The IXFA14N60P3 is obsolete with limited remaining stock (871 pieces). For long-term design continuity, selection of active production alternatives (IXFA14N60P, IXFA16N60P3, or IXFA12N65X2) is recommended.

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