IXEH40N120 IGBT Equivalent & Substitute Parts

Part Overview

The IXEH40N120 is an NPT (Non-Punch Through) IGBT manufactured by IXYS, rated for 1200V collector-emitter breakdown voltage and 60A maximum collector current with 300W power dissipation capability. The device is housed in a TO-247-3 through-hole package and operates across a temperature range of -55°C to 150°C junction temperature.

This part is classified as obsolete. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this IGBT topology.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	V
Current - Collector (Ic) (Max)	60	A
Power - Max	300	W
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 40A	V
Switching Energy (On)	6.1	mJ
Switching Energy (Off)	3	mJ
Gate Charge	150	nC
IGBT Type	NPT	-
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-247-3	-

Substitute Part Grouping Explanation

Substitution of the IXEH40N120 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage rating: Minimum 1200V collector-emitter breakdown voltage
Current rating: Minimum 60A maximum collector current
Power dissipation: Minimum 300W capability
Package type: TO-247-3 through-hole configuration
Input type: Standard gate drive compatibility

Secondary Compatibility Factors:

Operating temperature range: Minimum -55°C to 150°C junction temperature
Mounting configuration: Through-hole technology
Gate charge characteristics: Influence on drive circuit design

Substitute parts are grouped into two categories based on IGBT technology type:

Category 1: NPT Technology Substitutes Parts utilizing NPT (Non-Punch Through) technology maintain the closest electrical characteristics to the original IXEH40N120. These include IXGH32N170 from IXYS.

Category 2: Trench Field Stop Technology Substitutes Parts utilizing Trench Field Stop technology offer improved switching performance and lower gate charge while maintaining voltage and current ratings. These include devices from STMicroelectronics (STGW series, STGWA series) and onsemi (FGH25T120SMD-F155, NGTB30N120L2WG).

Category 3: PT Technology Substitutes Parts utilizing PT (Punch Through) technology from IXYS offer enhanced current handling and reduced on-state voltage. These include IXA45IF1200HB.

Parameter Comparison

Part Number	Manufacturer	IGBT Type	Vce(br) Max (V)	Ic Max (A)	Power Max (W)	Vce(on) @ Test (V)	Gate Charge (nC)	Package	Temp Range (°C)	Product Status
IXEH40N120	IXYS	NPT	1200	60	300	3.0 @ 40A	150	TO-247-3	-55 to 150	Obsolete
IXA45IF1200HB	IXYS	PT	1200	78	325	2.1 @ 35A	106	TO-247-3	-40 to 150	Active
IXGH32N170	IXYS	NPT	1700	75	350	3.3 @ 32A	155	TO-247-3	-55 to 150	Active
FGH25T120SMD-F155	onsemi	Trench Field Stop	1200	50	428	2.4 @ 25A	225	TO-247-3	-55 to 175	Active
NGTB30N120L2WG	onsemi	-	1200	60	534	-	-	TO-247	-	Active
STGW25H120F2	STMicroelectronics	Trench Field Stop	1200	50	375	2.6 @ 25A	100	TO-247-3	-55 to 175	Active
STGW25M120DF3	STMicroelectronics	Trench Field Stop	1200	50	375	2.3 @ 25A	85	TO-247-3	-55 to 175	Active
STGW28IH125DF	STMicroelectronics	Trench Field Stop	1250	60	375	2.5 @ 25A	114	TO-247-3	-55 to 175	Active
STGWA25M120DF3	STMicroelectronics	Trench Field Stop	1200	50	375	2.3 @ 25A	85	TO-247	-55 to 175	Active
STGWA40H120DF2	STMicroelectronics	Trench Field Stop	1200	80	468	2.6 @ 40A	158	TO-247-3	-55 to 175	Active

Engineering Selection Recommendations

Direct Replacement Candidates (Highest Compatibility):

STGWA40H120DF2 and STGW28IH125DF are the primary candidates for direct substitution. Both devices maintain the 1200V voltage class, support 60A or greater collector current, and are housed in TO-247-3 packages. Both are manufactured by STMicroelectronics with active product status and RoHS3 compliance. The STGWA40H120DF2 provides superior power dissipation (468W versus 300W) and matches the 40A test condition of the original part. The STGW28IH125DF offers a slightly elevated voltage rating (1250V) with equivalent current handling and extended operating temperature range to 175°C.

Alternative Substitutes (Functional Equivalence with Design Considerations):

IXA45IF1200HB from IXYS provides active product status and maintains the same manufacturer ecosystem. This PT-type IGBT offers enhanced current capability (78A) and reduced on-state voltage (2.1V), resulting in lower conduction losses. The lower operating temperature minimum (-40°C versus -55°C) requires verification against application requirements.

STGW25M120DF3 and STGWA25M120DF3 are functionally equivalent Trench Field Stop devices with 1200V ratings and 50A current capability. These parts feature the lowest gate charge (85nC) among available substitutes, reducing gate drive circuit complexity. Both are RoHS3 compliant with active product status.

Compliance and Certification Status:

All recommended substitute parts carry RoHS3 compliance and REACH Unaffected status, matching the regulatory posture of the original IXEH40N120. All devices are classified as EAR99 for export control purposes and share the same HTSUS commodity code (8541.29.0095).

Frequently Asked Questions (FAQ)

Q: Can STGWA40H120DF2 directly replace IXEH40N120 in existing designs?

A: STGWA40H120DF2 meets all primary electrical and mechanical substitution criteria: 1200V voltage rating, 60A+ current capability, TO-247-3 package, and through-hole mounting. The device operates across -55°C to 175°C, exceeding the original -55°C to 150°C range. Gate charge (158nC) is comparable to the original (150nC), supporting existing gate drive circuits. Verification of switching energy characteristics (1mJ on, 1.32mJ off versus 6.1mJ on, 3mJ off) is required to confirm thermal management adequacy in the target application.

Q: What is the difference between NPT and Trench Field Stop IGBT types?

A: NPT (Non-Punch Through) technology, used in the original IXEH40N120 and IXGH32N170, provides a thicker drift region resulting in higher on-state voltage but lower switching losses. Trench Field Stop technology, employed in STMicroelectronics and onsemi devices, reduces on-state voltage and gate charge through advanced cell structure, improving overall efficiency. Selection depends on application priorities: conduction loss versus switching loss optimization.

Q: Are there current rating limitations when substituting with lower-rated devices?

A: Yes. Devices rated below 60A maximum collector current (such as STGW25H120F2 and STGW25M120DF3 at 50A) are not suitable for applications requiring the full 60A capability of the original IXEH40N120. These devices are acceptable only when application current requirements do not exceed their rated maximum.

Q: How do switching energy differences affect circuit design?

A: The original IXEH40N120 exhibits higher switching energy (6.1mJ on, 3mJ off) compared to Trench Field Stop alternatives (typically 0.6-1.3mJ). Lower switching energy reduces gate drive power dissipation and electromagnetic interference but may require gate drive circuit optimization. Higher switching energy devices generate more heat during switching transitions, affecting thermal design margins.

Q: What package considerations apply to TO-247 versus TO-247-3 variants?

A: TO-247-3 and TO-247 are mechanically compatible through-hole packages with identical lead spacing and mounting footprints. The primary difference is lead length: TO-247 Long Leads (used in STGWA25M120DF3) provide extended leads for specific PCB layouts. Standard TO-247-3 packages are interchangeable in most applications. Verify PCB hole spacing and lead length requirements before substitution.

Q: Is temperature range reduction from -55°C to -40°C acceptable?

A: IXA45IF1200HB operates from -40°C to 150°C, compared to the original -55°C to 150°C. This substitution is acceptable only for applications with minimum operating temperatures at or above -40°C. Applications requiring -55°C operation must select alternatives maintaining the full temperature range, such as STGWA40H120DF2, STGW28IH125DF, or IXGH32N170.

Q: What is the significance of gate charge in substitution decisions?

A: Gate charge (nC) determines the total charge required to drive the IGBT from off to on state. The original IXEH40N120 requires 150nC. Substitutes range from 85nC (STGW25M120DF3) to 225nC (FGH25T120SMD-F155). Lower gate charge reduces gate drive power dissipation and switching losses but may require gate drive circuit adjustment. Higher gate charge increases drive circuit demands but may improve noise immunity.

Q: Can IXGH32N170 be used as a substitute despite its 1700V rating?

A: IXGH32N170 exceeds the 1200V requirement with a 1700V rating, providing additional voltage margin. The device maintains NPT technology matching the original, operates across -55°C to 150°C, and is housed in TO-247-3. However, the higher voltage rating typically results in higher on-state voltage (3.3V at 32A test condition) and increased switching losses. This device is suitable for applications where voltage margin is beneficial and thermal design accommodates higher losses.

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