IXDR30N120 IGBT Equivalent & Substitute Parts

Part Overview

The IXDR30N120 is an NPT (Non-Punch Through) IGBT rated for 1200V collector-emitter breakdown voltage with a maximum collector current of 50A and 200W power dissipation. This device is packaged in TO-247-3 (ISOPLUS247™) through-hole configuration and is currently in active product status with 682 pieces in stock.

Substitute parts are necessary when the primary device becomes unavailable, when alternative manufacturers offer improved performance characteristics within the same electrical and mechanical specifications, or when design requirements necessitate enhanced thermal performance or switching characteristics while maintaining voltage and current ratings.

Substiute Parts

IXDR30N120
IXYSIn Stock: 743IXDR30N120 Datasheet
IXDR30N120
Current Part
IGW25N120H3FKSA1
Infineon TechnologiesIn Stock: 4514IGW25N120H3FKSA1 Datasheet
IGW25N120H3FKSA1
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IGW25T120FKSA1
Infineon TechnologiesIn Stock: 3111IGW25T120FKSA1 Datasheet
IGW25T120FKSA1
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IKW25N120T2FKSA1
Infineon TechnologiesIn Stock: 1628IKW25N120T2FKSA1 Datasheet
IKW25N120T2FKSA1
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IKW25T120FKSA1
Infineon TechnologiesIn Stock: 1301IKW25T120FKSA1 Datasheet
IKW25T120FKSA1
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STGWA25M120DF3
STMicroelectronicsIn Stock: 6282STGWA25M120DF3 Datasheet
STGWA25M120DF3
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Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 60 A
Power - Max 200 W
Package / Case TO-247-3 -
Mounting Type Through Hole -
Operating Temperature Range -55 to 150 °C (TJ)
Input Type Standard -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution eligibility for the IXDR30N120 is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A minimum
  • Package / Case: TO-247-3
  • Mounting Type: Through Hole
  • Input Type: Standard
  • RoHS Status: ROHS3 Compliant

Allowable Variation Parameters:

  • Power - Max: Substitute parts may exceed the 200W specification
  • Current - Collector Pulsed (Icm): Substitute parts may exceed 60A
  • Operating Temperature Range: Substitute parts may extend the upper or lower temperature limits
  • IGBT Type: Variations in internal architecture (NPT, Trench, Trench Field Stop) are acceptable provided electrical performance meets or exceeds the main part specifications
  • Switching Energy and Gate Charge: Variations are acceptable as these represent performance enhancements

All substitute parts listed maintain identical voltage and current ratings, identical package configuration, and identical compliance certifications as the IXDR30N120.

Parameter Comparison

Parameter IXDR30N120 IGW25N120H3FKSA1 IGW25T120FKSA1 IKW25N120T2FKSA1 IKW25T120FKSA1 STGWA25M120DF3
Manufacturer IXYS Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies STMicroelectronics
Voltage - Collector Emitter Breakdown (Max) 1200V 1200V 1200V 1200V 1200V 1200V
Current - Collector (Ic) (Max) 50A 50A 50A 50A 50A 50A
Current - Collector Pulsed (Icm) 60A 100A 75A 100A 75A 100A
Power - Max 200W 326W 190W 349W 190W 375W
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A 2.4V @ 15V, 25A 2.2V @ 15V, 25A 2.2V @ 15V, 25A 2.2V @ 15V, 25A 2.3V @ 15V, 25A
Gate Charge 120nC 115nC 155nC 120nC 155nC 85nC
Operating Temperature Range -55 to 150°C (TJ) -40 to 175°C (TJ) -40 to 150°C (TJ) -40 to 175°C (TJ) -40 to 150°C (TJ) -55 to 175°C (TJ)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Last Time Buy Not For New Designs Last Time Buy Active

Engineering Selection Recommendations

Primary Recommendation: IGW25N120H3FKSA1 (Infineon Technologies)

The IGW25N120H3FKSA1 is the preferred substitute for the IXDR30N120. This device maintains active product status, ensuring long-term availability and supply chain stability. It meets all mandatory electrical and mechanical parameters with identical 1200V/50A ratings and TO-247-3 packaging. The device demonstrates improved performance characteristics including reduced on-state voltage (2.4V versus 2.9V) and enhanced pulsed current capability (100A versus 60A). Operating temperature range extends to 175°C, providing superior thermal margin. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) match the original specification. Inventory availability of 4430 pieces supports immediate procurement.

Secondary Recommendation: STGWA25M120DF3 (STMicroelectronics)

The STGWA25M120DF3 serves as an alternative substitute with active product status. This device maintains identical voltage and current ratings with TO-247-3 through-hole packaging. Superior power dissipation capability (375W versus 200W) and extended operating temperature range (-55 to 175°C) provide enhanced thermal performance. Gate charge of 85nC represents the lowest among all substitutes, enabling faster switching characteristics. ROHS3 compliance and MSL 1 rating align with original specifications. Inventory of 6236 pieces ensures availability.

Conditional Recommendations:

IGW25T120FKSA1 and IKW25T120FKSA1 are classified as Last Time Buy products. These devices maintain electrical and mechanical compatibility but face supply discontinuation. Selection of these parts is appropriate only when existing inventory commitments or design validation history justify their use.

IKW25N120T2FKSA1 carries a Not For New Designs status and should not be selected for new applications or designs.

Frequently Asked Questions (FAQ)

Q: Can the IGW25N120H3FKSA1 directly replace the IXDR30N120 without circuit modifications?

A: Yes. Both devices share identical voltage ratings (1200V), current ratings (50A), and TO-247-3 package configuration. Pin assignments are compatible. The IGW25N120H3FKSA1 demonstrates improved on-state voltage characteristics (2.4V versus 2.9V at comparable test conditions), which reduces power dissipation and improves overall circuit efficiency without requiring design changes.

Q: What is the significance of the different IGBT types (NPT, Trench, Trench Field Stop) among the substitute parts?

A: IGBT type refers to the internal semiconductor architecture. The IXDR30N120 uses NPT technology. Substitute parts employ Trench or Trench Field Stop architectures, which represent advanced manufacturing processes. These architectural differences do not affect substitution eligibility provided that electrical performance specifications (voltage, current, on-state voltage) meet or exceed the original device. The architectural variations result in different switching energy and gate charge characteristics, which are performance enhancements rather than compatibility issues.

Q: Why do some substitute parts have higher power ratings than the IXDR30N120?

A: Power rating reflects the maximum thermal dissipation capability of the device package and internal design. Substitute parts with higher power ratings (IGW25N120H3FKSA1 at 326W, IKW25N120T2FKSA1 at 349W, STGWA25M120DF3 at 375W) incorporate improved thermal management or more efficient internal structures. Higher power ratings do not affect substitution compatibility; they represent performance improvements that reduce thermal stress in the application circuit.

Q: Are there any temperature range limitations when substituting the IXDR30N120?

A: The IXDR30N120 operates from -55°C to 150°C junction temperature. Most substitute parts extend the upper temperature limit to 175°C, providing enhanced thermal margin. IGW25T120FKSA1 and IKW25T120FKSA1 maintain the 150°C upper limit. All substitutes maintain or exceed the -55°C lower limit. Applications operating within the original -55 to 150°C range are fully compatible with all substitute parts.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (measured in nanocoulombs) determines the charge required to switch the IGBT on and off. The IXDR30N120 specifies 120nC. Substitute parts range from 85nC (STGWA25M120DF3) to 155nC (IGW25T120FKSA1 and IKW25T120FKSA1). Lower gate charge enables faster switching with reduced driver power requirements. Higher gate charge requires longer switching times but may provide improved noise immunity. Gate charge differences do not prevent substitution but may require driver circuit optimization for optimal performance.

Q: Which substitute part offers the best thermal performance?

A: The STGWA25M120DF3 provides the highest power dissipation rating (375W) and operates across the widest temperature range (-55 to 175°C). The IGW25N120H3FKSA1 and IKW25N120T2FKSA1 also extend to 175°C maximum junction temperature. For applications requiring maximum thermal headroom, STGWA25M120DF3 is the optimal selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 Compliant certification, matching the IXDR30N120 specification. All devices also maintain REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity level, ensuring compliance with environmental and reliability standards.

Q: What is the difference between Last Time Buy and Not For New Designs product status?

A: Last Time Buy status indicates that the manufacturer will discontinue the product after a specified date but will continue accepting orders until that date. Existing inventory may still be available. Not For New Designs status indicates that the manufacturer no longer recommends this product for new applications and may have already ceased production. For new designs, select only parts with Active status (IGW25N120H3FKSA1 or STGWA25M120DF3).

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