IXDP35N60B IGBT Equivalent & Substitute Parts

Part Overview

The IXDP35N60B is an NPT (Non-Punch Through) IGBT manufactured by IXYS, rated for 600V collector-emitter breakdown voltage and 60A continuous collector current. This through-hole TO-220-3 package device is designed for power switching applications requiring 250W maximum power dissipation. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and application-specific performance optimization while maintaining electrical and mechanical compatibility within defined parameter ranges.

Substiute Parts

IXDP35N60B

IXYSIn Stock: 1007IXDP35N60B Datasheet

Current PartRFQ

IGP30N60H3XKSA1

Infineon TechnologiesIn Stock: 1223IGP30N60H3XKSA1 Datasheet

SimilarRFQ

STGP20NC60V

STMicroelectronicsIn Stock: 1894STGP20NC60V Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXDP35N60B are qualified based on the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Package / Case: TO-220-3
• Mounting Type: Through Hole
• Input Type: Standard

Allowable Parameter Variations: Substitute parts may differ in IGBT type (NPT, Trench Field Stop, or unspecified), power dissipation rating, switching energy characteristics, gate charge, pulsed collector current, and on-state voltage, provided the core voltage and current ratings remain unchanged. Operating temperature range may vary within industrial specifications. All substitutes must maintain RoHS3 compliance and Active product status.

Parameter Comparison

Engineering Selection Recommendations

All three parts maintain Active product status and full RoHS3 compliance with REACH Unaffected designation, qualifying them for equivalent use in applications meeting the specified electrical parameters.

IXDP35N60B (IXYS): NPT technology with 250W maximum power rating and 70A pulsed current capability. Operating temperature range -55 to 150°C. Gate charge of 120nC provides moderate switching speed characteristics.

IGP30N60H3XKSA1 (Infineon): Trench Field Stop technology with 187W maximum power rating and 120A pulsed current capability. Extended operating temperature range to 175°C. Lower on-state voltage (2.4V) reduces conduction losses. Higher gate charge (165nC) may increase switching losses compared to the main part.

STGP20NC60V (STMicroelectronics): PowerMESH™ technology with 200W maximum power rating and 100A pulsed current capability. Operating temperature range matches the main part (-55 to 150°C). Lowest gate charge (100nC) supports faster switching transitions. Lower on-state voltage (2.5V) at reduced test current (20A) indicates optimized conduction characteristics.

Selection between substitutes depends on application-specific requirements for power dissipation, switching speed, and thermal performance within the defined voltage and current envelope.

Frequently Asked Questions (FAQ)

Q: Can the IGP30N60H3XKSA1 replace the IXDP35N60B in all applications?

A: The IGP30N60H3XKSA1 qualifies as an electrical and mechanical substitute based on matching 600V voltage rating, 60A continuous current rating, and TO-220-3 through-hole package. However, the lower maximum power rating (187W versus 250W) and higher gate charge (165nC versus 120nC) require verification that the application thermal design and gate drive circuit accommodate these differences.

Q: What is the significance of the different IGBT types (NPT versus Trench Field Stop)?

A: IGBT type represents the internal semiconductor technology. NPT (Non-Punch Through) and Trench Field Stop are distinct manufacturing approaches that affect switching characteristics and on-state voltage. Both types are qualified for this 600V/60A application class and are electrically interchangeable within the specified parameter ranges.

Q: Are all three parts suitable for -55°C operation?

A: The IXDP35N60B and STGP20NC60V both specify -55°C minimum operating temperature. The IGP30N60H3XKSA1 specifies -40°C minimum operating temperature. Applications requiring -55°C operation must use either the IXDP35N60B or STGP20NC60V.

Q: How do switching energy differences affect circuit design?

A: Switching energy values (on-time and off-time energy) are provided in the detailed specifications. The STGP20NC60V exhibits the lowest total switching energy (550µJ combined), which reduces gate drive power requirements and heat generation during switching transitions. The IGP30N60H3XKSA1 provides a single combined switching energy value (1.17mJ), while the IXDP35N60B specifies separate on and off components (1.6mJ and 800µJ respectively). Gate drive circuit design must accommodate the specified gate charge and switching energy characteristics of the selected part.

Q: Is the TO-220-3 package identical across all three parts?

A: All three parts use the TO-220-3 through-hole package with identical pin configuration and mechanical footprint. The IXDP35N60B and STGP20NC60V specify TO-220-3 as the supplier device package. The IGP30N60H3XKSA1 specifies PG-TO220-3-1 as the supplier device package, which is the Infineon designation for the same TO-220-3 physical package. PCB layout and thermal management considerations remain consistent across all three parts.