IXDN414YI Low-Side Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IXDN414YI is a low-side gate driver IC manufactured by IXYS, designed for driving IGBT, N-Channel, and P-Channel MOSFET devices. This non-inverting TO-263-5 package device operates across a supply voltage range of 4.5V to 35V and delivers peak output currents of 14A for both source and sink configurations.

The IXDN414YI is classified as obsolete. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term product availability for applications requiring low-side gate driver functionality.

Substiute Parts

IXDN414YI
IXYSIn Stock: 800IXDN414YI Datasheet
IXDN414YI
Current Part
IXDN614YI
IXYS Integrated Circuits DivisionIn Stock: 2231IXDN614YI Datasheet
IXDN614YI
Similar

Key Parameters

Parameter Value
Manufacturer Part Number IXDN414YI
Manufacturer IXYS
Category Power Management (PMIC)
Description IC GATE DRVR LOW-SIDE TO263
Driven Configuration Low-Side
Channel Type Single
Number of Drivers 1
Gate Type IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5V ~ 35V
Logic Voltage - VIL, VIH 0.8V, 4.6V
Current - Peak Output (Source, Sink) 14A, 14A
Input Type Non-Inverting
Rise / Fall Time (Typ) 22ns, 20ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Supplier Device Package TO-263-5
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution of the IXDN414YI is determined by strict alignment of the following critical parameters:

  • Driven Configuration: Low-Side operation only
  • Channel Type: Single channel
  • Gate Type Compatibility: IGBT, N-Channel, and P-Channel MOSFET support
  • Supply Voltage Range: 4.5V ~ 35V minimum requirement
  • Peak Output Current: 14A source and sink capability
  • Input Type: Non-Inverting logic
  • Package Compatibility: TO-263-5 footprint and pinout
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

The IXDN614YI meets all substitution criteria. Both devices share identical driven configuration, channel type, gate type support, supply voltage range, peak output current ratings, input type, package footprint, and operating temperature specifications. Minor variations in logic voltage thresholds and rise/fall times remain within acceptable operational margins for low-side gate driver applications.

Parameter Comparison

Parameter IXDN414YI IXDN614YI
Manufacturer IXYS IXYS Integrated Circuits Division
Category Power Management (PMIC) Power Management (PMIC)
Driven Configuration Low-Side Low-Side
Channel Type Single Single
Number of Drivers 1 1
Gate Type IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5V ~ 35V 4.5V ~ 35V
Logic Voltage - VIL, VIH 0.8V, 4.6V 0.8V, 3.0V
Current - Peak Output (Source, Sink) 14A, 14A 14A, 14A
Input Type Non-Inverting Non-Inverting
Rise / Fall Time (Typ) 22ns, 20ns 25ns, 18ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-6, D2PAK (5 Leads + Tab), TO-263BA TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Supplier Device Package TO-263-5 TO-263-5
Product Status Obsolete Active
RoHS Status Not specified ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 3 (168 Hours)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The IXDN614YI is the direct substitute for the obsolete IXDN414YI. Selection is supported by the following factors:

Product Status: The IXDN614YI maintains active product status, ensuring ongoing availability and manufacturer support. The IXDN414YI is obsolete, making the IXDN614YI the appropriate long-term replacement.

Compliance & Certifications: The IXDN614YI is ROHS3 compliant, meeting current environmental and regulatory requirements. Both devices maintain REACH Unaffected status and identical ECCN and HTSUS classifications.

Functional Equivalence: All critical electrical parameters—supply voltage range, peak output current, input type, gate type support, and operating temperature range—are identical between the two devices. This ensures direct functional compatibility in existing circuit designs.

Package Compatibility: Both devices utilize the TO-263-5 footprint with identical pinout and mechanical dimensions, enabling direct PCB-level substitution without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the IXDN614YI directly replace the IXDN414YI in existing designs?

A: Yes. The IXDN614YI is functionally equivalent to the IXDN414YI across all critical parameters: supply voltage range (4.5V ~ 35V), peak output current (14A source/sink), gate type support (IGBT, N-Channel, P-Channel MOSFET), input type (non-inverting), and operating temperature range (-55°C ~ 150°C). Package footprint and pinout are identical, enabling direct PCB substitution.

Q: What are the differences between these two devices?

A: The IXDN614YI differs from the IXDN414YI in three non-critical parameters: logic voltage VIH threshold (3.0V vs. 4.6V), rise/fall time specifications (25ns/18ns vs. 22ns/20ns), and product status (active vs. obsolete). The IXDN614YI also carries ROHS3 compliance and MSL-3 moisture sensitivity versus MSL-1 for the IXDN414YI. These differences do not affect functional compatibility in standard low-side gate driver applications.

Q: Are there any packaging or handling differences?

A: The IXDN614YI is supplied in tube packaging, while the IXDN414YI packaging is not specified. The IXDN614YI has MSL-3 (168 hours) moisture sensitivity compared to MSL-1 (unlimited) for the IXDN414YI. Standard moisture control procedures appropriate for MSL-3 components should be followed during storage and assembly.

Q: What is the supply voltage compatibility?

A: Both devices operate across identical supply voltage ranges of 4.5V to 35V. Circuit designs using the IXDN414YI require no voltage supply modifications when transitioning to the IXDN614YI.

Q: Are the output current ratings identical?

A: Yes. Both devices deliver 14A peak output current for source and sink configurations, ensuring equivalent drive capability for IGBT and MOSFET gate circuits.

Q: What is the operating temperature range?

A: Both devices operate across -55°C to 150°C junction temperature (TJ), providing identical thermal performance specifications for industrial and high-temperature applications.

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