IXDN414CI Low-Side Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IXDN414CI is a low-side gate driver IC manufactured by IXYS, designed for driving IGBT, N-Channel, and P-Channel MOSFET devices in power management applications. The device features non-inverting logic configuration and is packaged in TO-220-5 through-hole format. The IXDN414CI is currently classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing system support and new design implementations.

Substiute Parts

IXDN414CI

IXYSIn Stock: 2293IXDN414CI Datasheet

Current PartRFQ

IXDN614CI

IXYS Integrated Circuits DivisionIn Stock: 3135IXDN614CI Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXDN414CI is determined by the following critical parameters:

• Driven Configuration: Must be Low-Side
• Channel Type: Must be Single channel
• Number of Drivers: Must be 1
• Gate Type: Must support IGBT, N-Channel, and P-Channel MOSFET
• Voltage - Supply Range: Must encompass 4.5V ~ 35V
• Current - Peak Output: Must provide minimum 14A source and sink capability
• Input Type: Must be Non-Inverting
• Operating Temperature Range: Must cover -55°C ~ 150°C (TJ)
• Package / Case: Must be TO-220-5 form factor with through-hole mounting

The IXDN614CI meets all substitution criteria and maintains electrical and mechanical compatibility with the IXDN414CI across these parameters.

Parameter Comparison

Engineering Selection Recommendations

The IXDN614CI is the direct substitute for the obsolete IXDN414CI. Both devices share identical electrical specifications for supply voltage, output current, operating temperature range, and gate type support. The IXDN614CI maintains active product status with ROHS3 compliance, providing long-term availability and regulatory alignment for new designs and legacy system replacements.

Minor variations in logic voltage thresholds (VIH: 4.6V vs 3V) and rise/fall times (22ns/20ns vs 25ns/18ns) fall within acceptable operating margins for low-side gate driver applications and do not impact functional compatibility in standard IGBT and MOSFET switching circuits.

Frequently Asked Questions (FAQ)

Q: Can the IXDN614CI directly replace the IXDN414CI without PCB modifications?

A: Yes. Both devices use identical TO-220-5 through-hole packaging with the same pinout and electrical interface. No PCB layout changes are required for direct substitution.

Q: What is the primary reason for substituting the IXDN414CI?

A: The IXDN414CI is classified as obsolete. The IXDN614CI is the active equivalent that maintains full electrical and mechanical compatibility while ensuring ongoing supply availability.

Q: Are there differences in logic voltage thresholds between these parts?

A: The IXDN414CI specifies VIH at 4.6V, while the IXDN614CI specifies VIH at 3V. Both operate with VIL at 0.8V. These variations are within standard gate driver operating margins and do not affect circuit functionality.

Q: Do both parts support the same gate types?

A: Yes. Both the IXDN414CI and IXDN614CI drive IGBT, N-Channel MOSFET, and P-Channel MOSFET devices with identical 14A peak source and sink current capability.

Q: What is the difference in rise and fall times?

A: The IXDN414CI specifies 22ns rise time and 20ns fall time. The IXDN614CI specifies 25ns rise time and 18ns fall time. These timing differences are minor and do not impact standard switching applications within the specified operating temperature range.

Q: Is the IXDN614CI RoHS compliant?

A: Yes. The IXDN614CI is ROHS3 compliant, meeting current environmental and regulatory requirements for electronic components.

Q: Can both parts operate across the full -55°C to 150°C temperature range?

A: Yes. Both devices are rated for -55°C to 150°C junction temperature operation, supporting industrial and high-temperature applications.