IXDI404SIA Low-Side Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IXDI404SIA is a low-side gate driver IC manufactured by IXYS, designed for driving IGBT and MOSFET gates in power management applications. This device operates with a supply voltage range of 4.5V to 35V and features dual independent channels with 4A peak output current capability. The IXDI404SIA is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. Substitute parts must maintain compatibility across electrical specifications, package form factor, and functional performance to ensure reliable operation in existing circuit topologies.

Key Parameters

Parameter	Value
Manufacturer Part Number	IXDI404SIA
Manufacturer	IXYS
Category	Power Management (PMIC)
Description	IC GATE DRVR LOW-SIDE 8SOIC
Driven Configuration	Low-Side
Number of Drivers	2
Gate Type	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply	4.5V ~ 35V
Logic Voltage - VIL, VIH	0.8V, 2.5V
Current - Peak Output (Source, Sink)	4A, 4A
Input Type	Inverting
Rise / Fall Time (Typ)	16ns, 13ns
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
Product Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the IXDI404SIA are classified based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Compatibility Parameters:

Package form factor: 8-SOIC (0.154", 3.90mm Width) — all substitutes must match this footprint
Driven configuration: Low-Side only
Number of drivers: 2 independent channels
Input type: Inverting
Gate type support: IGBT and MOSFET compatibility
Supply voltage range: Must encompass or overlap with 4.5V ~ 35V
Peak output current: Source and sink capability of 4A minimum
Operating temperature range: Must support -55°C to 150°C or equivalent industrial range

Substitution Groups:

Group 1 — Direct Electrical Equivalents (IXYS IXDI602 Series) Parts IXDI602SI, IXDI602SIA, IXDI602SIATR, and IXDI602SITR maintain identical supply voltage range (4.5V ~ 35V), gate type support (IGBT, N-Channel, P-Channel MOSFET), and operating temperature range (-55°C ~ 150°C). These parts feature reduced peak output current (2A source/sink) and faster switching times (7.5ns rise, 6.5ns fall). Product status is Active, ensuring long-term availability.

Group 2 — Higher Current Capability (IXYS IXDI604SIA) The IXDI604SIA maintains the same supply voltage range (4.5V ~ 35V) and gate type support as the main part, with identical 4A peak output current. Operating temperature is reduced to -40°C ~ 125°C. Product status is Active. This part offers faster switching performance (9ns rise, 8ns fall).

Group 3 — Infineon IR4426 Series (Reduced Supply Voltage) Parts IR4426SPBF and IR4426STRPBF operate at reduced supply voltage (6V ~ 20V) compared to the IXDI404SIA. Peak output current is reduced (2.3A source, 3.3A sink). Operating temperature range is -40°C ~ 150°C. The IR4426STRPBF is Active status with higher inventory availability. These parts support IGBT and N-Channel MOSFET only.

Group 4 — Infineon IRS4426STRPBF (Reduced Performance) The IRS4426STRPBF operates at 6V ~ 20V supply voltage with 2.3A/3.3A peak output current. Switching times are significantly slower (25ns rise/fall). Product status is Active. This part supports IGBT and N-Channel MOSFET only.

Group 5 — Microchip MIC4123YME and MIC4423YM (Reduced Supply Voltage) The MIC4123YME operates at 4.5V ~ 20V with 3A peak output current and includes exposed pad packaging. The MIC4423YM operates at 4.5V ~ 18V with 3A peak output current. Both support N-Channel and P-Channel MOSFET only (no IGBT support). Product status is Active for both parts.

Parameter Comparison

Part Number	Manufacturer	Supply Voltage	Peak Output Current (Source/Sink)	Gate Type Support	Operating Temperature	Rise/Fall Time (Typ)	Product Status	Package
IXDI404SIA	IXYS	4.5V ~ 35V	4A / 4A	IGBT, N-Ch, P-Ch MOSFET	-55°C ~ 150°C (TJ)	16ns / 13ns	Obsolete	8-SOIC
IXDI602SI	IXYS	4.5V ~ 35V	2A / 2A	IGBT, N-Ch, P-Ch MOSFET	-55°C ~ 150°C (TJ)	7.5ns / 6.5ns	Active	8-SOIC-EP
IXDI602SIA	IXYS	4.5V ~ 35V	2A / 2A	IGBT, N-Ch, P-Ch MOSFET	-55°C ~ 150°C (TJ)	7.5ns / 6.5ns	Active	8-SOIC
IXDI602SIATR	IXYS	4.5V ~ 35V	2A / 2A	IGBT, N-Ch, P-Ch MOSFET	-55°C ~ 150°C (TJ)	7.5ns / 6.5ns	Active	8-SOIC
IXDI602SITR	IXYS	4.5V ~ 35V	2A / 2A	IGBT, N-Ch, P-Ch MOSFET	-55°C ~ 150°C (TJ)	7.5ns / 6.5ns	Active	8-SOIC-EP
IXDI604SIA	IXYS	4.5V ~ 35V	4A / 4A	IGBT, N-Ch, P-Ch MOSFET	-40°C ~ 125°C (TA)	9ns / 8ns	Active	8-SOIC
IR4426SPBF	Infineon	6V ~ 20V	2.3A / 3.3A	IGBT, N-Ch MOSFET	-40°C ~ 150°C (TJ)	15ns / 10ns	Obsolete	8-SOIC
IR4426STRPBF	Infineon	6V ~ 20V	2.3A / 3.3A	IGBT, N-Ch MOSFET	-40°C ~ 150°C (TJ)	15ns / 10ns	Active	8-SOIC
IRS4426STRPBF	Infineon	6V ~ 20V	2.3A / 3.3A	IGBT, N-Ch MOSFET	-40°C ~ 150°C (TJ)	25ns / 25ns	Active	8-SOIC
MIC4123YME	Microchip	4.5V ~ 20V	3A / 3A	N-Ch, P-Ch MOSFET	-40°C ~ 125°C (TJ)	11ns / 11ns	Active	8-SOIC-EP
MIC4423YM	Microchip	4.5V ~ 18V	3A / 3A	N-Ch, P-Ch MOSFET	-40°C ~ 150°C (TJ)	28ns / 32ns	Active	8-SOIC

Engineering Selection Recommendations

For Direct Replacement with Maintained Performance: The IXDI604SIA is the preferred substitute when 4A peak output current and full IGBT/MOSFET support are required. This part maintains the same supply voltage range (4.5V ~ 35V) and gate type compatibility as the IXDI404SIA. Product status is Active, ensuring long-term availability and supply chain stability. Operating temperature range is reduced to -40°C ~ 125°C, which is acceptable for most industrial applications.

For Supply Voltage Constrained Applications (6V ~ 20V): The IR4426STRPBF is recommended when supply voltage is limited to 6V ~ 20V. This part is Active status with high inventory availability (20,623 pcs). Peak output current is reduced to 2.3A source and 3.3A sink, suitable for lower-power gate drive applications. Operating temperature range extends to -40°C ~ 150°C.

For Extended Temperature Range with Reduced Current: The IXDI602SIA or IXDI602SIATR maintain the full supply voltage range (4.5V ~ 35V) and extended temperature range (-55°C ~ 150°C). These parts are suitable for applications where 2A peak output current is sufficient. Both are Active status with good inventory availability.

For MOSFET-Only Applications: The MIC4423YM is suitable when IGBT support is not required and supply voltage is limited to 4.5V ~ 18V. This part is Active status with extended operating temperature to 150°C. Peak output current is 3A, and inventory availability is adequate (1,433 pcs).

All substitute parts maintain the 8-SOIC package footprint and inverting input configuration. RoHS3 compliance is confirmed for all Active status parts. Selection should be based on specific application requirements for supply voltage range, peak output current, operating temperature, and gate type support.

Frequently Asked Questions (FAQ)

Q: Can the IXDI602SIA directly replace the IXDI404SIA in all applications? A: The IXDI602SIA maintains identical supply voltage range (4.5V ~ 35V), gate type support (IGBT, N-Channel, P-Channel MOSFET), and operating temperature range (-55°C ~ 150°C). However, peak output current is reduced from 4A to 2A. Direct replacement is possible only in applications where 2A peak output current is sufficient for gate drive requirements.

Q: What is the key difference between IXDI602SI and IXDI602SIA? A: The IXDI602SI includes an exposed pad (8-SOIC-EP package) for improved thermal performance, while IXDI602SIA uses standard 8-SOIC packaging. Electrical specifications are identical. Selection depends on thermal management requirements in the application.

Q: Why do Infineon IR4426 parts have reduced supply voltage range? A: The IR4426 series is specified for 6V ~ 20V supply voltage, which is narrower than the IXDI404SIA range of 4.5V ~ 35V. Applications requiring operation below 6V or above 20V cannot use IR4426 substitutes. Verify supply voltage requirements before selection.

Q: Are all substitute parts RoHS compliant? A: All Active status parts (IXDI602 series, IXDI604SIA, IR4426STRPBF, IRS4426STRPBF, MIC4123YME, MIC4423YM) are RoHS3 compliant. The obsolete IR4426SPBF is not RoHS compliant. For new designs, select only Active status parts.

Q: What is the impact of switching time differences on circuit performance? A: Switching times (rise/fall time) affect gate drive speed and power dissipation. The IXDI404SIA has 16ns rise and 13ns fall time. Faster parts like IXDI602SIA (7.5ns/6.5ns) reduce switching losses but may require circuit optimization. Slower parts like MIC4423YM (28ns/32ns) increase switching losses. Select based on target switching frequency and thermal budget.

Q: Can MOSFET-only parts (MIC4123YME, MIC4423YM) replace IGBT-capable parts? A: No. If the application requires IGBT gate drive capability, MOSFET-only parts cannot be used. Verify gate type requirements before substitution. IXYS IXDI series and Infineon IR/IRS series support IGBT operation.

Q: What packaging options are available for the IXDI602 series? A: The IXDI602 series is available in multiple packaging options: IXDI602SI (8-SOIC-EP with exposed pad), IXDI602SIA (standard 8-SOIC), IXDI602SIATR (8-SOIC with tape & reel), and IXDI602SITR (8-SOIC-EP with tape & reel). All maintain identical electrical specifications and 8-SOIC footprint compatibility.

Q: Is the IXDI604SIA suitable for high-temperature applications? A: The IXDI604SIA operates to 125°C (TA), which is lower than the IXDI404SIA range of 150°C (TJ). For applications requiring operation above 125°C, the IXDI602SIA or IXDI602SIATR are preferred, as they support -55°C ~ 150°C (TJ).

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