IXDH35N60B IGBT 600V 60A Equivalent & Substitute Parts

Part Overview

The IXDH35N60B is an NPT (Non-Punch Through) IGBT manufactured by IXYS, rated for 600V collector-emitter breakdown voltage and 60A continuous collector current with 250W maximum power dissipation. The device is housed in a TO-247-3 through-hole package and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	60	A
Current - Collector Pulsed (Icm)	70	A
Power - Max	250	W
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 35A	V
Gate Charge	120	nC
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—
Input Type	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IXDH35N60B are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Voltage - Collector Emitter Breakdown: 600V (exact match required)
Current - Collector (Ic) (Max): 60A (exact match required)
Package / Case: TO-247-3 (exact match required)
Mounting Type: Through Hole (exact match required)
Input Type: Standard (exact match required)

Secondary Compatibility Parameters:

Operating Temperature Range: Minimum -55°C to maximum 150°C or higher
RoHS Status: ROHS3 Compliant
Power dissipation capability: 187W or greater

All substitute parts listed meet or exceed the critical matching parameters. Variations in switching energy, gate charge, and on-state voltage (Vce(on)) are acceptable within the bounds of circuit design margins, provided the maximum ratings are not exceeded.

Parameter Comparison

Part Number	Manufacturer	Vce(br) (V)	Ic (A)	Icm (A)	Power (W)	Vce(on) (V)	Gate Charge (nC)	Temp Range (°C)	Package	Status
IXDH35N60B	IXYS	600	60	70	250	2.7 @ 35A	120	-55 to 150	TO-247-3	Obsolete
AOK30B60D1	Alpha & Omega Semiconductor	600	60	96	208	2.4 @ 26A	34	-55 to 150	TO-247-3	Active
FGH30N60LSDTU	onsemi	600	60	90	480	1.4 @ 30A	225	-55 to 150	TO-247-3	Active
IGW30N60TFKSA1	Infineon Technologies	600	60	90	187	2.05 @ 30A	167	-40 to 175	TO-247-3	Active
IKW30N60H3FKSA1	Infineon Technologies	600	60	120	187	2.4 @ 30A	165	-40 to 175	TO-247-3	Active
IKW30N60TFKSA1	Infineon Technologies	600	60	90	187	2.05 @ 30A	167	-40 to 175	TO-247-3	Active
STGW20NC60V	STMicroelectronics	600	60	100	200	2.5 @ 20A	100	-55 to 150	TO-247-3	Active
STGW20NC60VD	STMicroelectronics	600	60	150	200	2.5 @ 20A	100	-55 to 150	TO-247-3	Active
STGW30NC60KD	STMicroelectronics	600	60	125	200	2.7 @ 20A	96	-55 to 150	TO-247-3	Active
STGW30NC60WD	STMicroelectronics	600	60	150	200	2.5 @ 20A	102	-55 to 150	TO-247-3	Active
STGW30V60DF	STMicroelectronics	600	60	120	258	2.3 @ 30A	163	-55 to 175	TO-247-3	Active

Engineering Selection Recommendations

All listed substitute parts are classified as Active products with ROHS3 compliance and REACH unaffected status, ensuring regulatory compliance and long-term availability. The following selection criteria apply:

For Direct Replacement with Minimal Circuit Redesign:

STGW30NC60KD and STGW30NC60WD (STMicroelectronics) provide the closest electrical match to the IXDH35N60B, with identical voltage and current ratings, matching operating temperature range (-55°C to 150°C), and comparable on-state voltage characteristics.

For Applications Requiring Enhanced Performance:

FGH30N60LSDTU (onsemi) offers superior power dissipation capability (480W) and lower on-state voltage (1.4V @ 30A), suitable for high-efficiency applications where thermal management is critical.
STGW30V60DF (STMicroelectronics) provides extended operating temperature range (-55°C to 175°C) and improved power handling (258W), beneficial for harsh environment applications.

For Gate Drive Optimization:

AOK30B60D1 (Alpha & Omega Semiconductor) features significantly lower gate charge (34nC) compared to the original part (120nC), reducing gate drive power requirements and enabling faster switching transitions.

All substitute parts maintain the TO-247-3 through-hole package format and standard input type, ensuring mechanical and electrical socket compatibility without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the IXDH35N60B be directly replaced with any of the listed substitute parts?

A: Yes, all listed substitute parts share identical voltage (600V), current (60A), and package (TO-247-3) specifications. Direct socket replacement is mechanically and electrically feasible. However, circuit performance characteristics such as switching speed and gate drive requirements may vary due to differences in gate charge and switching energy. Circuit validation is necessary to confirm performance within design specifications.

Q: What is the primary reason for substituting the IXDH35N60B?

A: The IXDH35N60B is classified as obsolete. Substitute parts from active manufacturers (Alpha & Omega Semiconductor, onsemi, Infineon Technologies, and STMicroelectronics) ensure continued component availability for production and field service applications.

Q: Are there differences in thermal performance between the IXDH35N60B and substitute parts?

A: Yes. The IXDH35N60B is rated for 250W maximum power dissipation. Substitute parts vary: AOK30B60D1 (208W), FGH30N60LSDTU (480W), Infineon parts (187W), STMicroelectronics parts (200-258W). Higher power ratings indicate superior thermal capability. Application thermal requirements determine the most suitable substitute.

Q: Do all substitute parts operate within the same temperature range as the IXDH35N60B?

A: The IXDH35N60B operates from -55°C to 150°C. Most substitute parts match this range. Infineon TrenchStop devices (IGW30N60TFKSA1, IKW30N60H3FKSA1, IKW30N60TFKSA1) extend to 175°C maximum junction temperature. STGW30V60DF also reaches 175°C. These extended-range parts are suitable for high-temperature applications.

Q: What is the significance of gate charge differences among substitute parts?

A: Gate charge (Qg) directly affects gate drive circuit design and switching speed. The IXDH35N60B requires 120nC. AOK30B60D1 requires only 34nC, reducing gate drive power and enabling faster switching. Infineon and onsemi parts require 163-225nC, potentially requiring higher gate drive current. Gate drive circuit compatibility must be verified during substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for commercial and industrial applications.

Q: Which substitute part offers the best on-state voltage performance?

A: FGH30N60LSDTU (onsemi) provides the lowest on-state voltage at 1.4V @ 30A, compared to the IXDH35N60B at 2.7V @ 35A. Lower on-state voltage reduces conduction losses and heat generation, improving overall system efficiency.

Q: Can substitute parts be mixed in the same application or circuit board?

A: Mixing different substitute parts in parallel or in the same circuit is not recommended without detailed electrical analysis. Differences in gate charge, switching characteristics, and on-state voltage can create current imbalance and thermal stress. If multiple devices are required, use identical part numbers to ensure matched electrical behavior.

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