IX2120BTR Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IX2120BTR is a half-bridge gate driver IC manufactured by IXYS Integrated Circuits Division, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device operates with a supply voltage range of 15V to 20V and features independent dual-channel architecture with 2A peak output current capability on both source and sink paths.

The IX2120BTR is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this gate driver topology.

Substiute Parts

IX2120BTR
IXYS Integrated Circuits DivisionIn Stock: 1038IX2120BTR Datasheet
IX2120BTR
Current Part
IR2113STRPBF
Infineon TechnologiesIn Stock: 35233IR2113STRPBF Datasheet
IR2113STRPBF
MFR Recommended

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 15V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 1200 V
Rise / Fall Time (Typ) 9.4ns, 9.7ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 28-SOIC (0.295", 7.50mm Width)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IX2120BTR is evaluated based on functional equivalence across critical electrical and mechanical parameters. The primary substitution candidate is the IR2113STRPBF from Infineon Technologies.

Substitution compatibility is determined by the following key parameters:

  • Half-bridge driven configuration with independent dual-channel architecture
  • Support for IGBT and N-Channel MOSFET gate types
  • Non-inverting input logic
  • Peak output current capability of 2A (source and sink)
  • Logic voltage thresholds of 6V and 9.5V
  • Operating temperature range of -40°C to 150°C
  • Surface mount packaging with 7.50mm width SOIC form factor
  • ROHS3 compliance and REACH unaffected status

Parameter Comparison

Parameter IX2120BTR (Main Part) IR2113STRPBF (Substitute)
Manufacturer IXYS Integrated Circuits Division Infineon Technologies
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 15V ~ 20V 3.3V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A 2A, 2A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 1200 V 600 V
Rise / Fall Time (Typ) 9.4ns, 9.7ns 25ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 28-SOIC (0.295", 7.50mm Width) 16-SOIC (0.295", 7.50mm Width)
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 3 (168 Hours)

Engineering Selection Recommendations

The IR2113STRPBF qualifies as a functional substitute for the IX2120BTR based on matching core gate driver specifications: half-bridge configuration, independent dual-channel architecture, 2A peak output current, non-inverting logic, and identical logic voltage thresholds.

Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for equivalent component selection.

The IR2113STRPBF carries active product status from Infineon Technologies, ensuring ongoing availability and supply chain support compared to the obsolete IX2120BTR. This substitution supports long-term design sustainability and production continuity.

Design considerations include package form factor differences (28-SOIC versus 16-SOIC) and bootstrap voltage rating variance (1200V versus 600V). These differences require circuit-level evaluation to confirm compatibility with specific application requirements.

Frequently Asked Questions (FAQ)

Q: What defines functional equivalence between the IX2120BTR and IR2113STRPBF?

A: Both devices share identical half-bridge gate driver architecture with independent dual channels, 2A peak output current capability, non-inverting logic inputs, and matching logic voltage thresholds of 6V and 9.5V. Both support IGBT and N-Channel MOSFET gate types and operate across the -40°C to 150°C temperature range.

Q: Are there electrical differences that affect substitution?

A: The IR2113STRPBF has a lower bootstrap voltage rating (600V versus 1200V) and slower rise/fall times (25ns/17ns versus 9.4ns/9.7ns). Applications requiring the full 1200V bootstrap capability or faster switching transitions require circuit-level verification before substitution.

Q: What are the package differences?

A: The IX2120BTR uses 28-SOIC packaging while the IR2113STRPBF uses 16-SOIC packaging. Both maintain the same 7.50mm width. PCB layout modifications are necessary to accommodate the different pin counts and physical dimensions.

Q: Does the supply voltage range difference affect compatibility?

A: The IX2120BTR operates at 15V to 20V supply voltage, while the IR2113STRPBF operates at 3.3V to 20V. For applications within the 15V to 20V range, both devices are compatible. Applications using lower supply voltages require the IR2113STRPBF.

Q: Are there moisture sensitivity considerations?

A: The IX2120BTR has MSL 1 (unlimited shelf life), while the IR2113STRPBF has MSL 3 (168-hour floor life after moisture exposure). Storage and handling procedures must comply with the more restrictive MSL 3 requirements when using the IR2113STRPBF.

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