ISZ0803NLSATMA1 Equivalent & Substitute Parts

Part Overview

The ISZ0803NLSATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ 5 series. This device is rated for 100V drain-to-source voltage with continuous drain current of 7.7A at Ta and 37A at Tc. The component is housed in a surface mount 8-PowerTDFN package (PG-TSDSON-8-26).

The ISZ0803NLSATMA1 carries a product status of "Not For New Designs," indicating that Infineon has discontinued this model for new applications. Engineers and procurement teams must identify functionally equivalent alternatives to support ongoing production, maintenance, and new development initiatives. Substitute parts must maintain electrical and mechanical compatibility while meeting current product availability and compliance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	7.7	A
Continuous Drain Current @ 25°C (Tc)	37	A
RDS(on) Max @ 20A, 10V	16.9	mOhm
Gate Threshold Voltage (Vgs(th)) Max @ 18µA	2.3	V
Gate Charge (Qg) Max @ 10V	15	nC
Input Capacitance (Ciss) Max @ 50V	1000	pF
Power Dissipation Max (Ta)	2.1	W
Power Dissipation Max (Tc)	43	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PowerTDFN (PG-TSDSON-8-26)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the ISZ0803NLSATMA1 are identified based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution scope:

Mandatory Matching Parameters:

Drain to Source Voltage (Vdss): 100V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: 8-PowerTDFN (PG-TSDSON-8-26)
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C

Allowable Variation Parameters: Substitute parts may exceed the continuous drain current (Id), on-resistance (RDS(on)), gate charge (Qg), and power dissipation ratings of the main part, provided all other electrical and mechanical specifications remain compatible. Higher current ratings and lower on-resistance values represent improved performance characteristics suitable for direct substitution in existing designs.

The ISZ0804NLSATMA1 qualifies as a direct substitute based on these criteria. It maintains identical voltage ratings, package configuration, and operating temperature range while providing enhanced current handling capability and reduced on-resistance.

Parameter Comparison

Parameter	ISZ0803NLSATMA1	ISZ0804NLSATMA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
Series	OptiMOS™ 5	OptiMOS™ 5	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current @ Ta	7.7	11	A
Continuous Drain Current @ Tc	37	58	A
RDS(on) Max @ 20A, 10V	16.9	11.5	mOhm
Gate Threshold Voltage (Vgs(th)) Max	2.3	2.3	V
Gate Charge (Qg) Max @ 10V	15	24	nC
Input Capacitance (Ciss) Max @ 50V	1000	1600	pF
Power Dissipation Max (Ta)	2.1	2.1	W
Power Dissipation Max (Tc)	43	60	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	8-PowerTDFN (PG-TSDSON-8-26)	8-PowerTDFN (PG-TSDSON-8-26)	—
Mounting Type	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

ISZ0804NLSATMA1 as Primary Substitute:

The ISZ0804NLSATMA1 is the qualified substitute for the ISZ0803NLSATMA1. Both devices share identical electrical voltage specifications (100V Vdss), gate threshold characteristics (2.3V), and operating temperature range (-55°C to 150°C). Both are housed in the same 8-PowerTDFN surface mount package (PG-TSDSON-8-26), ensuring mechanical and thermal compatibility.

The ISZ0804NLSATMA1 provides superior electrical performance with higher continuous drain current ratings (11A at Ta, 58A at Tc versus 7.7A and 37A respectively) and reduced on-resistance (11.5mOhm versus 16.9mOhm at 20A, 10V). These improvements result in lower power dissipation and enhanced thermal performance, making the ISZ0804NLSATMA1 suitable for direct substitution in applications where the ISZ0803NLSATMA1 was previously specified.

Compliance and Availability:

The ISZ0804NLSATMA1 carries an "Active" product status, indicating ongoing manufacturer support and availability. Both parts maintain ROHS3 compliance, MSL Level 1 (Unlimited moisture sensitivity), and REACH Unaffected status, ensuring regulatory alignment across supply chain and manufacturing environments.

The ISZ0803NLSATMA1 is designated "Not For New Designs," making the ISZ0804NLSATMA1 the appropriate selection for new development initiatives while remaining compatible with legacy applications requiring the original part number.

Frequently Asked Questions (FAQ)

Q: Can the ISZ0804NLSATMA1 directly replace the ISZ0803NLSATMA1 in existing circuit designs?

A: Yes. Both devices share identical voltage ratings (100V Vdss), gate threshold voltage (2.3V), operating temperature range (-55°C to 150°C), and package configuration (8-PowerTDFN, PG-TSDSON-8-26). The ISZ0804NLSATMA1 provides equal or superior performance across all electrical parameters, making it a direct substitute without circuit modification.

Q: What are the key differences between these two MOSFETs?

A: The ISZ0804NLSATMA1 offers higher continuous drain current (11A at Ta, 58A at Tc versus 7.7A and 37A), lower on-resistance (11.5mOhm versus 16.9mOhm at 20A, 10V), and higher power dissipation capability (60W at Tc versus 43W). Gate charge increases from 15nC to 24nC, and input capacitance increases from 1000pF to 1600pF. These represent performance enhancements suitable for higher-current applications.

Q: Are the packages physically identical?

A: Yes. Both the ISZ0803NLSATMA1 and ISZ0804NLSATMA1 use the 8-PowerTDFN package (PG-TSDSON-8-26) with surface mount configuration. Pin assignments and thermal characteristics are identical, allowing direct PCB footprint compatibility.

Q: What is the significance of the "Not For New Designs" status on the ISZ0803NLSATMA1?

A: This designation indicates that Infineon has discontinued the ISZ0803NLSATMA1 for new product development. The ISZ0804NLSATMA1, with "Active" status, is the recommended selection for new designs. Existing applications using the ISZ0803NLSATMA1 may continue operation, but substitution to the ISZ0804NLSATMA1 is advised for long-term supply chain stability.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the ISZ0803NLSATMA1 and ISZ0804NLSATMA1 are ROHS3 compliant, carry MSL Level 1 (Unlimited), and maintain REACH Unaffected status. Regulatory and environmental compliance requirements are identical across both parts.

Q: What thermal performance differences exist between these devices?

A: The ISZ0804NLSATMA1 supports higher power dissipation at Tc (60W versus 43W), resulting in improved thermal performance under high-current operation. The reduced on-resistance (11.5mOhm versus 16.9mOhm) generates less heat during conduction, contributing to lower junction temperatures in equivalent thermal environments.

Q: Are there any gate drive considerations when substituting the ISZ0804NLSATMA1?

A: Gate drive voltage requirements remain identical (±20V maximum). However, the ISZ0804NLSATMA1 exhibits higher gate charge (24nC versus 15nC at 10V) and input capacitance (1600pF versus 1000pF at 50V). Gate drivers with sufficient current capacity to charge these capacitances within required switching times must be verified for the specific application.

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