ISL6700IB Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The ISL6700IB is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation, designed for driving N-Channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 9V to 15V and delivers peak output currents of 1.4A (source) and 1.3A (sink). The ISL6700IB is classified as obsolete, making identification of active equivalent parts essential for new designs and production continuity.

Substiute Parts

ISL6700IB
Renesas Electronics CorporationIn Stock: 968ISL6700IB Datasheet
ISL6700IB
Current Part
ISL6700IBZ
Renesas Electronics CorporationIn Stock: 1479ISL6700IBZ Datasheet
ISL6700IBZ
Direct
NCP5109BDR2G
onsemiIn Stock: 47851NCP5109BDR2G Datasheet
NCP5109BDR2G
Similar

Key Parameters

Parameter Value
Manufacturer Renesas Electronics Corporation
Category Power Management (PMIC)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 15V
Current - Peak Output (Source, Sink) 1.4A, 1.3A
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the ISL6700IB are identified based on the following critical parameters that determine functional compatibility:

Direct Equivalent Criteria:

  • Driven configuration: Half-bridge
  • Number of drivers: 2 independent channels
  • Package type: 8-SOIC form factor
  • Input type: Non-inverting
  • Gate type compatibility: N-Channel MOSFET capable
  • Operating temperature range: -40°C to 125°C
  • Mounting type: Surface mount

Substitution Categories:

  1. Direct Substitute (ISL6700IBZ): Identical electrical specifications and gate driver architecture from the same manufacturer. Differs only in packaging format (tube vs. unspecified) and product status (active vs. obsolete).

  2. Similar Substitute (NCP5109BDR2G): Functionally equivalent half-bridge gate driver from onsemi with the same 8-SOIC package and non-inverting input configuration. Operates within compatible supply voltage and temperature ranges. Differences exist in output current ratings and rise/fall times, requiring circuit-level verification.

Parameter Comparison

Parameter ISL6700IB ISL6700IBZ NCP5109BDR2G
Manufacturer Renesas Electronics Renesas Electronics onsemi
Product Status Obsolete Active Active
Package / Case 8-SOIC (0.154", 3.90mm) 8-SOIC (0.154", 3.90mm) 8-SOIC (0.154", 3.90mm)
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 9V ~ 15V 9V ~ 15V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V 0.8V, 2.3V
Current - Peak Output (Source, Sink) 1.4A, 1.3A 1.4A, 1.3A 250mA, 500mA
High Side Voltage - Max (Bootstrap) 80V 80V 200V
Rise / Fall Time (Typ) 5ns, 5ns 5ns, 5ns 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

ISL6700IBZ is the primary recommended substitute for the obsolete ISL6700IB. This part maintains identical electrical specifications, the same 8-SOIC package footprint, and equivalent functional performance. The ISL6700IBZ is currently in active production status with ROHS3 compliance, making it suitable for new designs and production continuity. No circuit modifications are required for direct substitution.

NCP5109BDR2G is a secondary alternative when ISL6700IBZ availability is constrained. This onsemi device provides half-bridge gate driving functionality in the same 8-SOIC package with active product status and ROHS3 compliance. However, the NCP5109BDR2G exhibits lower peak output current ratings (250mA source, 500mA sink versus 1.4A and 1.3A), slower rise and fall times (85ns and 35ns versus 5ns), and a higher maximum bootstrap voltage (200V versus 80V). These differences require verification against specific circuit requirements before implementation.

Frequently Asked Questions (FAQ)

Q: Can ISL6700IBZ be used as a direct replacement for ISL6700IB without circuit modifications?

A: Yes. The ISL6700IBZ is electrically and functionally identical to the ISL6700IB. Both devices share the same supply voltage range (9V–15V), output current specifications (1.4A source, 1.3A sink), rise/fall times (5ns), and 8-SOIC package dimensions. Direct PCB substitution is possible without design changes.

Q: What are the key differences between ISL6700IBZ and NCP5109BDR2G?

A: The primary differences are output current capability and switching speed. The ISL6700IBZ delivers 1.4A source and 1.3A sink current with 5ns rise/fall times. The NCP5109BDR2G provides 250mA source and 500mA sink current with 85ns rise and 35ns fall times. The NCP5109BDR2G also supports a higher bootstrap voltage (200V versus 80V). Circuit-level verification is required to confirm compatibility with load requirements.

Q: Are all three parts compatible with the same PCB layout?

A: Yes. All three devices use the 8-SOIC package with identical 0.154" (3.90mm) width and pin configuration. PCB footprints are interchangeable. However, electrical parameter differences between ISL6700IBZ and NCP5109BDR2G may require circuit validation.

Q: What is the compliance status of these parts?

A: ISL6700IB is RoHS non-compliant. ISL6700IBZ and NCP5109BDR2G are both ROHS3 compliant. All three parts are REACH unaffected and classified under ECCN EAR99.

Q: Which substitute should be selected for new production designs?

A: ISL6700IBZ is the recommended choice for new designs due to identical electrical specifications and active product status. NCP5109BDR2G should be considered only when ISL6700IBZ is unavailable and circuit requirements accommodate the lower output current and slower switching characteristics.

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